-
1.发明公开
公开(公告)号：EP1311008A4
公开(公告)日：2006-01-18
申请号：EP01941168
申请日：2001-06-21
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01L43/08
摘要： A so-called CPP-GMR device comprises a nonmagnetic thin film the major component of which is a metal having a specific resistance of 4 νΦ•cm to 200 νΦ• cm. The resistance does not become too high even if the device area is limited. Therefore a large output is produced even if the magnetic gap is narrow.
-
公开(公告)号：EP0759619A3
公开(公告)日：1998-10-28
申请号：EP96113285
申请日：1996-08-20
IPC分类号： G01R33/09 , G11B5/39 , G11C11/14 , G11C11/42 , H01F10/08 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G11B2005/3996 , G11C11/14
摘要： A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film 2 to provide a window for excitation light is arranged on a substrate 1 via a buffer layer. Another semiconductor film 3 and a nonmagnetic metallic film (or a nonmagnetic insulating film) 4 are arranged on the semiconductor film 2 successively. A magnetic film 5 having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film) 4. An electrode 6 is arranged beneath the substrate 1 and another electrode 7 is arranged on the magnetic film 5. By radiating a laser light beam to the semiconductor film acting as a window 2, electrons having spin polarization are excited in the semiconductor film 3 so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film 5 on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.
-
搜索结果
2 条记录 (耗时 0.008 秒)
