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36 条记录 (耗时 0.012 秒)

    Method for forming a gate oxide film
    1.
    发明公开
    Method for forming a gate oxide film 失效
    形成栅极氧化膜的方法

    公开(公告)号：EP0503815A3

    公开(公告)日：1993-12-15

    申请号：EP92301793.3

    申请日：1992-03-03

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Fusegawa, Izumi ,  Yamagishi, Hirotoshi ,  Fujimaki, Nobuyoshi ,  Karasawa, Yukio

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/316

    CPC分类号： H01L21/28211 ,  H01L21/3225

    摘要： A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm² and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1µ A/mm² as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1 x 10¹⁸ atoms/cm³.

    A single crystal pulling apparatus
    2.
    发明公开
    A single crystal pulling apparatus 失效
    单晶拉拔设备

    公开(公告)号：EP0538048A1

    公开(公告)日：1993-04-21

    申请号：EP92309452.8

    申请日：1992-10-16

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Takano, Kiyotaka ,  Fusegawa, Izumi ,  Yamagishi, Hirotoshi

    IPC分类号： C30B15/14 ,  C30B15/00

    CPC分类号： C30B15/00 ,  C30B15/14 ,  Y10T117/1032 ,  Y10T117/1056

    摘要： A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube (7) suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shield ring (8) is connected to the lower end of the purge tube, and a cylindrical quartz partition ring (9) made of a quartz glass containing no bubbles is held vertically by the heat shield ring in a manner such that the lower end of the quartz partition ring comes substantially lower than the lower end of the purge tube so that, by being dipped in the polycrystal melt, the partition ring isolates the interior surface of the melt from the exterior surface of the melt, over which latter the granular polycrystal material is poured.

    摘要翻译： 一种基于切克劳斯基技术的单晶拉拔设备，其具有用于连续地向坩埚供应粒状多晶材料的导管和垂直吹扫管（7），所述垂直吹扫管（7）中心地悬置在加热室中，其中吹扫管可垂直移动; 在净化管的下端连接隔热环（8），并且由不含气泡的石英玻璃制成的圆柱形石英隔离环（9）由隔热环竖直地保持，使得下部 石英分隔环的端部基本上低于清洗管的下端，因此通过浸入多晶熔体中，隔离环将熔体的内表面与熔体的外表面隔离开， 粒状多晶材料被倒入。

    An apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus
    7.
    发明公开
    An apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus 失效
    一种用于为一个半导电的晶体拉伸装置供给粒状散料。

    公开(公告)号：EP0537988A1

    公开(公告)日：1993-04-21

    申请号：EP92309332.2

    申请日：1992-10-14

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Takano, Kiyotaka ,  Fusegawa, Izumi ,  Yamagishi, Hirotoshi ,  Mizuishi, Koji ,  Ogino, Katsuhiko

    IPC分类号： C30B15/02

    CPC分类号： B01J8/002 ,  C30B15/02 ,  Y10T117/1056

    摘要： An apparatus for continuously supplying granular polycrystal silicon to a crucible of a semiconductor single crystal pulling apparatus, comprising a funnel-shaped tank having a relatively large capacity, a main hopper having a relatively small capacity and weight, a subhopper having an intermediate capacity and weight and providing a passage from said tank to said main hopper, and a weight sensor for detecting the weight of the main hopper, wherein the overall weight of the main hopper is measured to obtain the flow rate (supply rate) of the granular polycrystal silicon.

    摘要翻译： 重装置的连续供给粒状多晶硅的半导体单晶提拉装置的坩埚，其包括具有相对大容量的漏斗状容器，具有相对小的容量和主料斗中，具有到中间容量和重量subhopper 以及提供从所述罐到所述主料斗，以及用于检测主漏斗的重量，worin主漏斗的总重量的重量传感器的通道被测量以获得粒状多晶硅的流量（供给比率）。

    Device and method for changing czochralski crucible rotation rate
    9.
    发明公开
    Device and method for changing czochralski crucible rotation rate 失效
    Vorrichtung und Verfahren zurÄnderungdes Drehratens eines Czochralski-Tiegels

    公开(公告)号：EP0776997A1

    公开(公告)日：1997-06-04

    申请号：EP96308814.1

    申请日：1996-12-05

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Kitagawa, Kouji ,  Mizuishi, Kouji ,  Urano, Masahiko ,  Araki, Kenji ,  Iino, Eiichi ,  Fusegawa, Izumi

    IPC分类号： C30B15/30

    CPC分类号： C30B15/30 ,  Y10S117/917 ,  Y10T117/1032

    摘要： A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

    摘要翻译： 提供了一种用于通过CZ或MCZ方法制造单晶的新型装置，其包括用于在其中包含硅熔体的坩埚，用于拉出单晶的线卷筒和线，电动机和用于旋转坩埚的旋转轴， 一个变速装置被插在电动机和旋转轴之间，并且如果需要的话被插入磁场发生器中，通过该磁场发生器将磁场施加到熔体。 根据用于制造单晶的装置，能够提高坩埚的旋转精度，能够高精度地控制拉伸单晶中的杂质浓度。

    Equipment for producing silicon single crystals
    10.
    发明公开
    Equipment for producing silicon single crystals 失效
    Vorrichtung zur Herstellung von Siliziumeinkristallen

    公开(公告)号：EP0752489A1

    公开(公告)日：1997-01-08

    申请号：EP96304902.8

    申请日：1996-07-03

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Fusegawa, Izumi ,  Hayashi, Toshiro ,  Ohta, Tomohiko ,  Arai, Masayuki

    IPC分类号： C30B15/30 ,  C30B15/26

    CPC分类号： C30B15/305 ,  C30B15/26 ,  Y10S117/917 ,  Y10T117/10 ,  Y10T117/1008

    摘要： An equipment for producing silicon single crystals based on an MCZ method, which enables an operator to be protected from dangerous exposure to magnetic field without involving increase in the size of the silicon single crystal production equipment. In the silicon single crystal production equipment based on the MCZ method, a growth furnace control apparatus for control of a pulling apparatus is located away from the pulling apparatus by a predetermined distance so that the intensity of magnetic field immediately close to the growth furnace control apparatus can become 300 gausses or less. A monitoring camera for observing the growing condition of the silicon single crystal is mounted to a window 5a of a growth furnace to be operatively connected to a monitor of the growth furnace control apparatus and to cause the growth furnace control apparatus to control the pulling apparatus on a remote control basis. In an experimental example, an accumulated magnetic field exposure value immediately close to the growth furnace control apparatus can be suppressed to less than 30% of its allowable maximum value and therefore the operator can continuously work highly safely.

    摘要翻译： 一种基于MCZ方法生产硅单晶的设备，其能够使操作者免受危险暴露于磁场而不涉及硅单晶生产设备尺寸的增加。 在基于MCZ方法的硅单晶制造装置中，用于控制拉制装置的生长炉控制装置远离牵引装置定位一定距离，使得紧邻生长炉控制装置的磁场强度 可以变成300高斯或更少。 将用于观察硅单晶生长状态的监视摄像机安装在生长炉的窗口5a上，以可操作地连接到生长炉控制装置的监视器，并使成长炉控制装置控制拉丝装置 遥控基础。 在实验例中，紧接着生长炉控制装置的累积磁场暴露值可以抑制在其允许最大值的30％以下，因此操作者能够高度安全地连续工作。