公开(公告)号：EP1880389A2

公开(公告)日：2008-01-23

申请号：EP06759137.0

申请日：2006-05-05

申请人： Sandisk 3D LLC

发明人： HERNER, S., Brad ,  KUMAR, Tanmay ,  PETTI, Christopher, J.

IPC分类号： G11C13/02 ,  H01L27/102 ,  H01L23/525 ,  H01L27/24 ,  G11C16/02

CPC分类号： H01L27/249 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： In a novel nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy, NbxOy, TixOy, HfxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors. The memory cell of the present invention can be used as a rewriteable memory cell or a one-time-programmable memory cell, and can store two or more data states.

公开(公告)号：EP1929525B1

公开(公告)日：2010-12-22

申请号：EP06815745.2

申请日：2006-09-27

申请人： Sandisk 3D LLC

发明人： KUMAR, Tanmay ,  HERNER, Brad, S. ,  PETTI, Christopher, J. ,  SCHEUERLEIN, Roy, E.

IPC分类号： H01L27/10 ,  H01L27/24 ,  G11C11/56

CPC分类号： G11C11/5692 ,  G11C13/0069 ,  G11C17/14 ,  G11C17/165 ,  G11C2013/0073 ,  H01L27/101

摘要： A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, while reset pulses are applied with the diode in reverse bias. By switching resistivity of the semiconductor material of the diode, a memory cell can be either one-time programmable or rewriteable, and can achieve two, three, four, or more distinct data states.

公开(公告)号：EP1866701A1

公开(公告)日：2007-12-19

申请号：EP06748959.1

申请日：2006-03-31

申请人： Sandisk 3D, LLC

发明人： CHEN, Yung-Tin ,  PETTI, Christopher, J. ,  RADIGAN, Steven, J. ,  KUMAR, Tanmay

IPC分类号： G03F9/00 ,  G03F7/20 ,  H01L23/00

CPC分类号： H01L27/0688 ,  G03F7/70633 ,  G03F9/7084 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446

摘要： In formation of monolithic three dimensional memory arrays, a photomask may be used more than once. Reuse of a photomask creates second, third or more instances of reference marks used by the stepper to achieve alignment (alignment marks) and to measure alignment achieved (overlay marks) directly above prior instances of the same reference mark. The prior instances of the same reference mark may cause interference with the present instance of the reference mark, complicating alignment and measurement. Using the methods of the present invention, blocking structure is created vertically interposed between subsequent instances of the same reference mark, preventing interference.

公开(公告)号：EP2279453A1

公开(公告)日：2011-02-02

申请号：EP08867215.9

申请日：2008-11-05

申请人： Sandisk 3D LLC

发明人： PETTI, Christopher, J. ,  SCHEUERLEIN, Roy, E.

IPC分类号： G03F1/14 ,  G03F7/20 ,  H01L21/027 ,  H01L27/102 ,  H01L27/06

CPC分类号： H01L21/32139 ,  G03F1/70 ,  G03F7/203 ,  H01L21/0274 ,  H01L21/31144 ,  H01L27/0688 ,  H01L27/1021 ,  Y10S430/153

摘要： Methods of making pillar shaped device array using a triple or quadruple exposure technique are described. A plurality of pillar shaped devices are formed arranged in a hexagonal or rectangular pattern.

公开(公告)号：EP2165337A2

公开(公告)日：2010-03-24

申请号：EP08779718.9

申请日：2008-06-23

申请人： Sandisk 3D LLC

发明人： KUMAR, Tanmay ,  PETTI, Christopher, J.

IPC分类号： G11C13/00 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0002 ,  G11C2213/33 ,  G11C2213/72 ,  H01L27/24

摘要： A nonvolatile memory device includes a semiconductor diode steering element, and a semiconductor read / write switching element.

公开(公告)号：EP2238622A1

公开(公告)日：2010-10-13

申请号：EP08867796.8

申请日：2008-11-05

申请人： Sandisk 3D LLC

发明人： SCHEUERLEIN, Roy, E. ,  PETTI, Christopher, J.

IPC分类号： H01L27/02 ,  H01L27/102 ,  H01L27/105 ,  H01L27/112 ,  H01L27/22 ,  H01L27/06 ,  H01L27/24 ,  H01L27/28 ,  G03F1/00 ,  G03F7/00 ,  G03F7/16

CPC分类号： G03F7/2022 ,  B82Y10/00 ,  H01L27/0207 ,  H01L27/1021 ,  H01L27/112 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085

摘要： A nonvolatile memory device includes a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern. The nonvolatile memory cells may be pillar shaped non-volatile memory cells which can be patterned using triple or quadruple exposure lithography or by using a self -assembling layer. The cells are arranged in parallelogram-shaped subarrays. The bit lines cross the word lines at an angle of 60 degrees. The memory device can be a three-dimensional array.

公开(公告)号：EP1929525A1

公开(公告)日：2008-06-11

申请号：EP06815745.2

申请日：2006-09-27

申请人： Sandisk 3D LLC

发明人： KUMAR, Tanmay ,  HERNER, Brad, S. ,  PETTI, Christopher, J. ,  SCHEUERLEIN, Roy, E.

IPC分类号： H01L27/10 ,  H01L27/24 ,  G11C11/56

CPC分类号： G11C11/5692 ,  G11C13/0069 ,  G11C17/14 ,  G11C17/165 ,  G11C2013/0073 ,  H01L27/101

摘要： A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, while reset pulses are applied with the diode in reverse bias. By switching resistivity of the semiconductor material of the diode, a memory cell can be either one-time programmable or rewriteable, and can achieve two, three, four, or more distinct data states.

公开(公告)号：EP1869679A2

公开(公告)日：2007-12-26

申请号：EP06720714.2

申请日：2006-02-14

申请人： Sandisk 3D LLC

发明人： SCHEUERLEIN, Roy, E. ,  PETTI, Christopher, J. ,  FASOLI, Luca, G.

IPC分类号： G11C11/34

CPC分类号： G11C8/10 ,  G11C5/063 ,  G11C8/08 ,  G11C8/14

摘要： A decoding circuit for non-binary groups of memory line drivers is disclosed. In one embodiment, an integrated circuit is disclosed comprising a binary decoder and circuitry operative to perform a non-binary arithmetic operation, wherein a result of the non-binary arithmetic operation is provided as input to the binary decoder. In another embodiment, an integrated circuit is disclosed comprising a memory array comprising a plurality of array lines, a non-integral-power-of-two number of array line driver circuits, and control circuitry configured to select one of the array line driver circuits. The control circuitry can comprise a binary decoder and a pre-decoder portion that performs a non-binary arithmetic operation. The concepts described herein may be used alone or in combination.

公开(公告)号：EP1880389B1

公开(公告)日：2011-09-21

申请号：EP06759137.0

申请日：2006-05-05

申请人： Sandisk 3D LLC

发明人： HERNER, S., Brad ,  KUMAR, Tanmay ,  PETTI, Christopher, J.

IPC分类号： G11C13/02 ,  H01L27/102 ,  H01L23/525 ,  H01L27/24 ,  G11C16/02

CPC分类号： H01L27/249 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： In a novel nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy, NbxOy, TixOy, HfxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors. The memory cell of the present invention can be used as a rewriteable memory cell or a one-time-programmable memory cell, and can store two or more data states.

公开(公告)号：EP2286453A1

公开(公告)日：2011-02-23

申请号：EP09763292.1

申请日：2009-06-02

申请人： Sandisk 3D LLC

发明人： HSIA, Kang-jay ,  PETTI, Christopher, J. ,  LI, Calvin, K.

IPC分类号： H01L27/102

CPC分类号： H01L27/1021

摘要： An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. Two- terminal devices such as passive element memory cells can include a diode steering element in series with an antifuse and/or other state change element. The devices are formed using pillar structures at the intersections of upper and lower sets of conductors. The height of the pillar structures are reduced by forming part of the diode for each pillar in a rail stack with one of the conductors. A diode in one embodiment can include a first diode component of a first conductivity type and a second diode component of a second conductivity type. A portion of one of the diode components is divided into first and second portions with one on the portions being formed in the rail stack where it is shared with other diodes formed using pillars at the rail stack.