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126 条记录 (耗时 0.012 秒)

    BACKSIDE INCIDENCE TYPE SOLID-STATE IMAGE PICKUP DEVICE
    2.
    发明公开
    BACKSIDE INCIDENCE TYPE SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
    背面入射型固态图像拾取装置

    公开(公告)号：EP3193367A1

    公开(公告)日：2017-07-19

    申请号：EP15839949.3

    申请日：2015-08-04

    申请人： Hamamatsu Photonics K.K.

    发明人： TAKAGI Shin-ichiro ,  MAETA Kentaro ,  YONETA Yasuhito ,  SUZUKI Hisanori ,  MURAMATSU Masaharu

    IPC分类号： H01L27/14 ,  H01L27/148 ,  H04N5/369 ,  H04N5/372

    CPC分类号： H01L27/14818 ,  H01L27/14 ,  H01L27/14685 ,  H01L27/148 ,  H01L27/14825 ,  H04N5/369 ,  H04N5/372

    摘要： A back-illuminated solid-state imaging device SI includes a semiconductor substrate 1, a shift register 19, and a light-shielding film 57. The semiconductor substrate 1 includes a light incident surface on the back side and a light receiving portion 13 generating a charge in accordance with light incidence. The shift register 19 is disposed on the side of a light-detective surface 7 opposite to the light incident surface of the semiconductor substrate 1. The light-shielding film 57 is disposed on the side of the light-detective surface 7 of the semiconductor substrate 1. The light-shielding film 57 includes an uneven surface 57a opposing the light-detective surface 7.

    摘要翻译： 背照式固态成像装置SI包括半导体衬底1，移位寄存器19和遮光膜57.半导体衬底1包括背面上的光入射面和光接收部13，光接收部13产生 根据光入射进行充电。 移位寄存器19设置在光检测面7的与半导体基板1的光入射面相反的一侧。遮光膜57配置在半导体基板的光检测面7侧 遮光膜57包括与光检测表面7相对的不平坦表面57a。

    SOLID-STATE IMAGING DEVICE
    6.
    发明公开
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号：EP2667410A1

    公开(公告)日：2013-11-27

    申请号：EP11856354.3

    申请日：2011-10-31

    申请人： Hamamatsu Photonics K.K.

    发明人： TAKAGI Shin-ichiro ,  YONETA Yasuhito ,  SUZUKI Hisanori ,  MURAMATSU Masaharu

    IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/335

    CPC分类号： H01L27/14806 ,  H01L27/14612 ,  H01L27/14825 ,  H04N5/355 ,  H04N5/37213 ,  H04N5/3725

    摘要： A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3 each having a photosensitive region 15 and an electric potential gradient forming region 17, and which are juxtaposed so as to be along a direction intersecting with a predetermined direction, a plurality of buffer gate portions 5 each arranged corresponding to a photoelectric converting portion 3 and on the side of the other short side forming a planar shape of the photosensitive region 15, and accumulates a charge generated in the photosensitive region 15 of the corresponding photoelectric converting portion 3, and a shift register 9 which acquires charges respectively transferred from the plurality of buffer gate portions 5, and transfers the charges in the direction intersecting with the predetermined direction, to output the charges. The buffer gate portion 5 has at least two gate electrodes which are arranged along the predetermined direction, and to which predetermined electric potentials are respectively applied so as to increase potential toward the predetermined direction.

    摘要翻译： 固态成像装置1设置有多个光电转换部分3，每个光电转换部分3具有光敏区域15和电位梯度形成区域17，并且沿着与预定方向交叉的方向并置， 多个缓冲栅极部分5，每个缓冲栅极部分5对应于光电转换部分3布置并且在另一个短边侧上形成光敏区域15的平面形状，并且累积在对应的光电转换部分的光敏区域15中产生的电荷 3和移位寄存器9，该移位寄存器9获取从多个缓冲栅极部分5分别传送的电荷，并在与预定方向交叉的方向上传送电荷以输出电荷。 缓冲栅极部分5具有沿着预定方向布置的至少两个栅电极，并且分别向其施加预定电位以增加朝向预定方向的电位。

    Charge transfer device
    7.
    发明公开
    Charge transfer device 失效
    充电传输装置

    公开(公告)号：EP0587179A3

    公开(公告)日：1995-08-16

    申请号：EP93114570.0

    申请日：1993-09-10

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Monoi, Makoto

    IPC分类号： H01L27/148 ,  H04N3/15

    CPC分类号： H01L27/14825 ,  H04N5/37213

    摘要： A charge transfer device of two-line read structure is formed with a first charge transfer path for transferring first-group charges, a second charge transfer path for transferring second-group charges, and a transfer gate portion (106). To complete the transfer operation of all the second-group charges output at a time, the transfer operation of the charges from the first charge transfer path to the second charge transfer path by the transfer gate portion is divided into a plurality of times. In addition, the second-group charges output at a time are transferred for each divided set of pixels in each divided transfer operation.

    摘要翻译： 两行读取结构的电荷转移装置形成有用于转移第一组电荷的第一电荷转移路径，用于转移第二组电荷的第二电荷转移路径和转移门部分（106）。 为了完成一次输出的所有第二组电荷的传送操作，通过传送门部分从第一电荷转移路径到第二电荷转移路径的电荷的转移操作被分成多次。 此外，在每个划分的传送操作中，对于每个划分的像素集合，一次传送一次输出的第二组电荷。

    CCD linear sensor
    8.
    发明公开
    CCD linear sensor 失效
    线性CCD传感器。

    公开(公告)号：EP0522436A2

    公开(公告)日：1993-01-13

    申请号：EP92111158.9

    申请日：1992-07-01

    申请人： SONY CORPORATION

    发明人： Hirama, Masahide, c/o Sony Corporation

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14825

    摘要： The present invention intends to improve a difference between signal levels of odd-numbered pixels and even-numbered pixels in a CCD (charge coupled device) linear sensor. In a CCD linear sensor comprising a sensor region (1) having an array of a plurality of sensor elements (pixels) (S₁), (S₂), ... and first and second horizontal transfer registers (4) and (5) disposed on the respective sides of the sensor region (1) through read-out gate sections (2) and (3) wherein signal charges of every other sensor elements (S₁), (S₃), (S₅), ... are transferred by the first horizontal transfer register (4) while signal charges of remaining every other sensor elements (S₂), (S₄), (S₆) are transferred by the second horizontal transfer register (5), the first and second horizontal transfer registers (4) and (5) include first and second transfer electrodes (22R₁), (22R₂) to which two-phase drive pulses (φH₁) and (φH₂) are applied, respectively and electrode configurations at the read-out gate section side are formed substantially the same,whereby the capacity of a first transfer section (HR₁) to which the drive pulse (φH₁) is applied is made equal to that of a second transfer section (HR₂) to which the drive pulse (φH₂) is applied.

    摘要翻译： 本发明旨在改善CCD（电荷耦合器件）线性传感器中奇数像素和偶数像素的信号电平之间的差异。 在包括具有多个传感器元件（像素）（S1），（S2），...以及第一和第二水平传输寄存器（4）和（5）的阵列的传感器区域（1）的CCD线性传感器中， 通过读出门部分（2）和（3）在传感器区域（1）的相应侧上，其中每隔一个传感器元件（S1），（S3），（S5），...的信号电荷通过 第一水平传送寄存器（4），其余每个传感器元件（S2），（S4），（S6）的信号电荷由第二水平传送寄存器（5）传送，第一和第二水平传送寄存器（4） 和（5）分别包括施加有两相驱动脉冲（phi H1）和（phi H2）的第一和第二转移电极（22R1），（22R2），并且形成在读出栅极部分侧的电极结构 基本上相同，由此使施加驱动脉冲（phi H1）的第一传送部（HR1）的容量等于o f施加驱动脉冲（phi H2）的第二传送部分（HR2）。

    Image sensor having charge storage regions
    9.
    发明公开
    Image sensor having charge storage regions 失效
    具有充电储存区域的图像传感器

    公开(公告)号：EP0311529A3

    公开(公告)日：1991-09-11

    申请号：EP88402546.1

    申请日：1988-10-07

    申请人： FUJITSU LIMITED

    发明人： Takei, Akira ,  Nabeta, Teruyuki ,  Nishikawa,Tetsuo ,  Nagai, Eiichi

    IPC分类号： H01L27/14 ,  H04N3/15

    CPC分类号： H01L27/14825 ,  H04N5/3692

    摘要： An image sensor includes a plurality of potential monitoring transistors (T21 - T24, T31 - T34) connected to respective floating electrodes (7₁ - 7₄) for separately monitoring changes in potential of the respective floating electrodes. In addition, the image sensor includes an output circuit (T25 - T27, R21; T35 - T37, R31) for producing an output signal (Vo(max), Vo(min)) which varies in accordance with one of the monitored potentials which is one of the highest potential and the lowest potential.

    Solid state image pickup device
    10.
    发明公开
    Solid state image pickup device 失效
    固态图像拾取器件

    公开(公告)号：EP0355522A3

    公开(公告)日：1990-08-22

    申请号：EP89114371.1

    申请日：1989-08-03

    申请人： SEIKO EPSON CORPORATION

    发明人： Toda, Shigeo Seiko Epson Corporation

    IPC分类号： H01L31/0203 ,  H04N1/028 ,  H01L25/04

    CPC分类号： H01L25/042 ,  H01L27/14825 ,  H01L31/0203 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A solid state image pickup device comprises: a transparent support (101); one or more transparent substrate chips (102) mounted on the support; one or more photoelectric converting elements (103) formed on the transparent substrate chips; a fixing agent (107) for fixing the transparent substrate chips, at the face opposite to the face on which the photoelectric converting elements are formed, to the support at one end thereof; and an anti-reflection mold (105) for covering the transparent substrate chips on at least the sides thereof, the refractive index of the anti-reflection mold being equal to or larger than that of the transparent substrate chips. Such an arrangement can provide a wide-area type solid state image pickup device, particularly a solid state image pickup device of the in-line type in which element chips are arranged in a line, which is equal in optical and electrical continuity to a single-line solid state image pickup device, and which is of high precision, high reliability, easy to use, of low costs, and compact in structure.