摘要:
A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. A method of making a multijunction solar cell is also described.
摘要:
In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.
摘要:
A back contact solar cell is disclosed herein. The back contact solar cell includes a base diffusion region, a plurality of emitter diffusion regions, a plurality of base contact points, and a plurality of emitter contact points. Each of the emitter diffusion regions is implemented as a brick pattern structure and surrounded by the base diffusion region. The base contact points are disposed in the base diffusion region, and the base contact points are disposed between the emitter diffusion regions. Each of the emitter contact points is disposed at center of each emitter diffusion regions.
摘要:
A method for producing a solar cell comprising a substrate (1) composed of crystalline silicon is described, wherein, in a surface (1a) of the Si substrate (1), a locally defined n-doped emitter region is produced by whole-area cold coating of the surface (1a) with a P-containing coating (3), followed by a local laser beam (L) doping-in of P atoms from the P-containing coating (3), and subsequent thermal drive-in of the P atoms, proceeding from the doping-in region.
摘要:
Disclosed is solar cell, a photovoltaic module, and a method for manufacturing a photovoltaic module. The solar cell includes a substrate, first busbars and second busbars arranged on the substrate, first fingers connected to the first busbars, and second fingers connected to the second busbars. The first busbars and the second busbars have opposite polarities. The first fingers have a same polarity as the first busbars, and the second fingers have a same polarity as the second busbars. The substrate is provided with busbar pits. At least part of the first and second busbars are located in the busbar pits. Depths of the busbar pits range from 30 µm to 50 µm. Along a thickness direction of the substrate, ratios of the depths of the busbar pits to heights of the first busbars and/or the second busbars range from 10:3 to 6:5.
摘要:
The invention relates to the manufacturing process of a solar cell (1) with back contact and passivated emitter, comprising a dielectric stack (10) of at least two layers consisting of at least a first dielectric layer (11) made of AlOx or SiOx in contact with a p-type silicon layer (3), and a second dielectric layer (13) deposited on the first dielectric layer (11). Besides, the method of manufacturing comprising a formation step of at least one partial opening (15) preferably by laser ablation into the dielectric stack (10), sparing at least partially the aforementioned first dielectric layer.