PIXELATED OPTICAL FILTER AND METHOD FOR THE MANUFACTURING THEREOF
    101.
    发明公开
    PIXELATED OPTICAL FILTER AND METHOD FOR THE MANUFACTURING THEREOF 审中-公开
    Pixelierter optischer Filter und Verfahren zu dessen Herstellung

    公开(公告)号:EP2447744A1

    公开(公告)日:2012-05-02

    申请号:EP11186889.9

    申请日:2011-10-27

    Abstract: The present invention discloses a pixelated optical filter comprising high-index refraction material positioned between low-index-refraction matter. At least some of the high-index refraction material has a grated structure and lateral and vertical dimensions with respect to the low-index-refraction matter such that the high-index refraction material is operative to act as a leaky waveguide for light incident on the pixelated optical filter. The grated structure comprises a plurality of at least one grating pattern that is planarly bounded. Each of the plurality of at least one grating pattern constitutes a subpixel. A plurality of subpixels is operative to diffract incident light to at least one zero-order wavelength spectrum respective of the at least one grating pattern. Additional and alternative embodiments are disclosed and claimed.

    Abstract translation: 本发明公开了一种像素化滤光器,其包括位于低折射率物质之间的高折射率折射材料。 至少一些高折射率折射材料具有相对于低折射率折射物质的磨碎结构和横向和垂直尺寸,使得高折射率折射材料可操作以用作入射在 像素化滤光片。 格栅结构包括多个平面约束的至少一个光栅图案。 多个至少一个光栅图案中的每一个构成子像素。 多个子像素用于将入射光衍射到至少一个光栅图案相应的至少一个零级波长光谱。 公开和要求保护附加和替代实施例。

    SOLID-STATE IMAGING ELEMENT
    106.
    发明公开
    SOLID-STATE IMAGING ELEMENT 有权
    SEMICONDUCTORS成像元件

    公开(公告)号:EP1903608A4

    公开(公告)日:2011-12-14

    申请号:EP06746502

    申请日:2006-05-17

    Inventor: TAKAGI TORU

    Abstract: A solid state image sensor of the present invention includes a pixel formed on a semiconductor substrate, a photoelectric conversion part provided in the pixel to convert light to an electric signal, and a microlens provided above the photoelectric conversion part, in which the microlens has a plane shape with a direct distance from a center to a lens edge being varied, the microlens has first base regions and second base regions not including the first base regions, the first base regions being provided near n (n is a natural number) positions, of the lens edge, from which the direct distance is relatively long, and a vertical height of the first base regions from an upper surface of the photoelectric conversion is lower than a vertical height of the second base regions from the upper surface of the photoelectric conversion part.

    BILDSENSOR UND VERFAHREN ZUR HERSTELLUNG EINES BILDSENSORS
    108.
    发明公开
    BILDSENSOR UND VERFAHREN ZUR HERSTELLUNG EINES BILDSENSORS 审中-公开
    图像传感器及其制造方法的图像传感器

    公开(公告)号:EP2384517A2

    公开(公告)日:2011-11-09

    申请号:EP09748319.2

    申请日:2009-11-02

    Abstract: The invention relates to an image senor and a method for producing an image sensor. The image sensor (1a) according to the invention comprises at least: a substrate (8) having a plurality of light-sensitive elements (2) forming a sensor field and first microfilter elements (3a) for the wave length-selective filtration of incident light. According to the invention, the first microfilter elements (3a) are fastened to a transparent carrier (4a), for example made of glass or a transparent film. A first microfilter element (3a) is arranged in front of a part of the light-sensitive elements (2) for the wave length-selective filtration of light striking the light-sensitive element (2). In front of a further part of the light-sensitive elements (2), no first microfilter element (3a) is arranged.

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