Abstract:
The present invention discloses a pixelated optical filter comprising high-index refraction material positioned between low-index-refraction matter. At least some of the high-index refraction material has a grated structure and lateral and vertical dimensions with respect to the low-index-refraction matter such that the high-index refraction material is operative to act as a leaky waveguide for light incident on the pixelated optical filter. The grated structure comprises a plurality of at least one grating pattern that is planarly bounded. Each of the plurality of at least one grating pattern constitutes a subpixel. A plurality of subpixels is operative to diffract incident light to at least one zero-order wavelength spectrum respective of the at least one grating pattern. Additional and alternative embodiments are disclosed and claimed.
Abstract:
Disclosed are black composite particles having a high light-shielding performance suitable as a black component such as a black matrix in a color filter. Further disclosed is a black resin composition from which a black matrix having a high light-shielding performance can be formed. The black composite particles are represented by the composition formula: TiNxOy·zX (wherein X is a metal atom such as silver; x is a number greater than 0 and less than 2; y is a number not less than 0 and less than 2; and z is a number greater than 0 and less than 10). The black resin composition comprises at least a light shielding agent, a resin, and a solvent and comprises the black composite particles as the light shielding agent.
Abstract:
A colored curable composition including: at least one selected from the group consisting of a compound represented by the following Formula (1a) and a tautomer thereof; and at least one polymerizable compound, wherein R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 each independently represent a hydrogen atom or a monovalent substituent; and R 11 and R 12 , and R 15 and R 16 independently may bond to each other in each pair to form a ring.
Abstract:
A solid state image sensor of the present invention includes a pixel formed on a semiconductor substrate, a photoelectric conversion part provided in the pixel to convert light to an electric signal, and a microlens provided above the photoelectric conversion part, in which the microlens has a plane shape with a direct distance from a center to a lens edge being varied, the microlens has first base regions and second base regions not including the first base regions, the first base regions being provided near n (n is a natural number) positions, of the lens edge, from which the direct distance is relatively long, and a vertical height of the first base regions from an upper surface of the photoelectric conversion is lower than a vertical height of the second base regions from the upper surface of the photoelectric conversion part.
Abstract:
The invention relates to an image senor and a method for producing an image sensor. The image sensor (1a) according to the invention comprises at least: a substrate (8) having a plurality of light-sensitive elements (2) forming a sensor field and first microfilter elements (3a) for the wave length-selective filtration of incident light. According to the invention, the first microfilter elements (3a) are fastened to a transparent carrier (4a), for example made of glass or a transparent film. A first microfilter element (3a) is arranged in front of a part of the light-sensitive elements (2) for the wave length-selective filtration of light striking the light-sensitive element (2). In front of a further part of the light-sensitive elements (2), no first microfilter element (3a) is arranged.