公开(公告)号：EP1633001A1

公开(公告)日：2006-03-08

申请号：EP04745810.4

申请日：2004-06-11

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  Niigata Seimitsu Co., Ltd. ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  NISHIMUTA, Takefumi ,  MIYAGI, Hiroshi c/o NIIGATA SEIMITSU CO., LTD. ,  SUGAWA, Shigetoshi ,  TERAMOTO, Akinobu

IPC分类号： H01L27/092 ,  H03D7/14 ,  H04B1/30 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66795 ,  H01L21/823807 ,  H01L21/82385 ,  H01L27/092 ,  H03D7/1441 ,  H03D7/1458 ,  H03D2200/0025 ,  H03D2200/0033 ,  H03D2200/0047

摘要： A rectangular parallelepiped p-channel MOS transistor 21 having a height of H B and a width of W B is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the p-channel MOS transistor 21. A source and a drain are formed on both sides of a gate electrode 26 to form a MOS transistor. The MOS transistor configures a direct conversion receiving circuit. Thus, an error between an I signal and a Q signal in a direct conversion receiving frequency conversion circuit can be reduced.

摘要翻译： 在硅衬底上形成具有HB高度和WB宽度的长方体p沟道MOS晶体管21，并且在p沟道MOS的顶表面和侧表面的一部分上形成栅极氧化膜 晶体管21.源极和漏极形成在栅电极26的两侧以形成MOS晶体管。 MOS晶体管配置直接转换接收电路。 因此，可以减少直接变换接收频率转换电路中的I信号和Q信号之间的误差。

公开(公告)号：EP1633000A1

公开(公告)日：2006-03-08

申请号：EP04745809.6

申请日：2004-06-11

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  Niigata Seimitsu Co., Ltd. ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  NISHIMUTA, Takefumi, c/o K.K. TOYOTA JIDOSHOKKI ,  MIYAGI, Hiroshi, c/o NIIGATA SEIMITSU CO., LTD ,  SUGAWA, Shigetoshi ,  TERAMOTO, Akinobu

IPC分类号： H01L27/092 ,  H03D7/14 ,  H04B1/30 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/1033 ,  H01L21/823807 ,  H01L21/82385 ,  H01L29/045 ,  H03D7/1441 ,  H03D7/1458 ,  H03D2200/0033 ,  H03D2200/0047

摘要： A mixer circuit is configured using a CMOS transistor (800), comprising a p-channel transistor (840A) and an n-channel transistor (840B) in which semiconductor substrates (810A, 810) with at least two crystal planes and a gate insulator (820A) formed on at least two of the crystal planes on the semiconductor substrate are comprised and the channel width of a channel formed in the semiconductor substrate along with the gate insulator is represented by summation of each of the channel widths of channels individually formed on said at least two crystal planes. Such a configuration allows reduction of 1/f noise, DC offset generated in output signals due to variation in electrical characteristics of a transistor element, and signal distortion based on the channel length modulation effect.

摘要翻译： 使用CMOS晶体管（800）构成混频器电路，其包括p沟道晶体管（840A）和n沟道晶体管（840B），其中具有至少两个晶体面的半导体衬底（810A，810）和栅极绝缘体 包括形成在半导体衬底上的至少两个晶面上的（820A），并且形成在半导体衬底中的与栅极绝缘体一起形成的沟道的沟道宽度由各个沟道宽度的和 至少说两个晶面。 这样的结构允许减少由于晶体管元件的电特性的变化而在输出信号中产生的1 / f噪声，DC偏移，以及基于沟道长度调制效应的信号失真。

公开(公告)号：EP1608003A1

公开(公告)日：2005-12-21

申请号：EP04716345.6

申请日：2004-03-02

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  SUGAWA, Shigetoshi ,  YANAGIDA, Kimio ,  TAKEHISA, Kiwamu

IPC分类号： H01L21/027 ,  G03F1/08

CPC分类号： G03F7/70425 ,  G03F7/70291 ,  G03F7/70358 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/70466 ,  G03F7/70475 ,  G03F7/70866

摘要： A mask repeater for transferring the pattern of a master mask onto a real mask by exposure and transferring the pattern on the real mask onto a substrate such as a semiconductor wafer. The size of the master mask is larger than that of the real mask. By using an optical system for reduction-projecting soft X-rays, a 1:1 magnification mask, which is the next generation mask, is fabricated. In a scan exposure system, the shape of a slit used for scanning is made fixed, and exposure is conducted only for the exposed region to realize oblique exposure. When the shape of the slit is a trapezoid and when the exposed region is reciprocated in the scanning direction, the number of joint exposures can be decreased.

摘要翻译： 一种掩模中继器，用于通过曝光将主掩模的图案转印到真实掩模上，并将真实掩模上的图案转印到诸如半导体晶片的基板上。 主掩模的大小大于真实掩模的大小。 通过使用用于还原投射软X射线的光学系统，制造作为下一代掩模的1：1倍率掩模。 在扫描曝光系统中，用于扫描的狭缝的形状被固定，并且仅对曝光区域进行曝光以实现倾斜曝光。 当狭缝的形状是梯形时，并且当暴露区域沿扫描方向往复运动时，可以减少关节暴露的次数。

公开(公告)号：EP0952505B1

公开(公告)日：2005-11-23

申请号：EP98937819.5

申请日：1998-08-13

申请人： FUJIKIN Inc. ,  TOKYO ELECTRON LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  KAGAZUME, Tetu, Tokyo Electron Yamanashi Ltd ,  SUGIYAMA, Kazuhiko, Tokyo Electron Yamanashi Ltd ,  DOHI, Ryousuke, Kabushiki-Kaisha Fujikin ,  UNO, Tomio, Kabushiki-Kaisha Fujikin ,  NISHINO, Kouji, Kabushiki-Kaisha Fujikin ,  FUKUDA, Hiroyuki, Kabushiki-Kaisha Fujikin ,  IKEDA, Nobukazu, Kabushiki-Kaisha Fujikin ,  YAMAJI, Michio, Kabushiki-Kaisha Fujikin

IPC分类号： G05D7/06 ,  G05D16/20 ,  F16K7/16 ,  F16K7/14

CPC分类号： G05D7/0647 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A pressure type flow rate control apparatus to be used in a gas supply system for semiconductor manufacturing equipment, which calculates a flow rate (Q = KP1) by using a detected pressure P1 of a pressure detector (4) installed between an orifice (5) and a control valve provided upstream of the orifice (5) and outputs the difference between the calculated flow rate and a flow rate control signal as a control signal to the control valve. The orifice (5) is formed as a direct touch type metal diaphragm, and an annular gap between a valve seat and a diaphragm is made variable to allow the flow rate control range to be changed easily.

公开(公告)号：EP1596107A1

公开(公告)日：2005-11-16

申请号：EP04709325.7

申请日：2004-02-09

申请人： FUJIKIN INCORPORATED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  IKEDA, Nobukazu, Fujikin Incorporated ,  YAMAJI, Michio, Fujikin Incorporated ,  KITANO, Masafumi, Fujikin Incorporated ,  MORIMOTO, Akihiro, Fujikin Incorporated

IPC分类号： F16K7/12 ,  F16K27/00

CPC分类号： F16K7/16 ,  F16K51/02

摘要： With the diaphragm valve in the vacuum exhaustion system applied to the semiconductor manufacturing facilities, it is possible to prevent the corrosion of the valve members caused by the accumulation and adherence of the substances as produced by the thermal decomposition, the clogging caused by the substances as produced, and the seat leakage. Further, it is possible to make the facilities for the vacuum exhaustion system small-sized, and, as a result, to lower the costs. It is also possible to reduce the diameter of the vacuum exhaustion system pipings for shortening the vacuum exhaustion time.
Specifically, the diaphragm valve 1 is provided with a body 2 having a flow-in passage 6, a flow-out passage 7, and a valve seat 8 formed between the passages; a diaphragm 3 installed in the body 2 and permitted to rest on and move away from the valve seat 8; and a driving means 4 installed on the body 2 to allow the diaphragm 3 to rest on and move away from the valve seat 8, wherein synthetic resin films 5 of predetermined thickness are coated on fluid-contacting parts 25 of the afore-mentioned body 2 and diaphragm 3.

摘要翻译： 通过将真空排气系统中的隔膜阀应用于半导体制造设备，可以防止由热分解产生的物质的积聚和粘附引起的阀构件的腐蚀，由物质引起的堵塞 产生和座位泄漏。 此外，可以使真空耗尽系统的设施小型化，从而降低成本。 也可以减小真空耗尽系统管道的直径，以缩短真空耗尽时间。 具体地，隔膜阀1设置有形成在通道之间的流入通道6，流出通道7和阀座8的主体2; 隔膜3安装在主体2中并允许静止在阀座8上并远离阀座8; 以及安装在主体2上的驱动装置4，以允许隔膜3搁置并离开阀座8，其中预定厚度的合成树脂膜5涂覆在上述主体2的流体接触部分25上 和隔膜3.

公开(公告)号：EP0969342B1

公开(公告)日：2005-11-02

申请号：EP99900168.8

申请日：1999-01-11

申请人： FUJIKIN Inc. ,  TOKYO ELECTRON LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  KAGAZUME, Tetu, Tokyo Electron Yamanashi Ltd. ,  SUGIYAMA, Kazuhiko, Tokyo Electron Yamanashi Ltd. ,  DOHI, Ryousuke, Kabushiki-Kaisha Fujikin ,  MINAMI, Yukio, Kabushiki-Kaisha Fujikin ,  NISHINO, Kouji, Kabushiki-Kaisha Fujikin ,  KAWATA, Kouji, Kabushiki-Kaisha Fujikin ,  IKEDA, Nobukazu, Kabushiki-Kaisha Fujikin ,  YAMAJI, Michio, Kabushiki-Kaisha Fujikin

IPC分类号： G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A fluid supply apparatus comprising a pressure flow controller for controlling the rate of flow of fluid, a fluid selector valve for opening/closing the fluid passage on the secondary side, and a fluid supply controller for controlling the operation of them, wherein the pressure flow controller is provided with an orifice (5), a control valve (1) provided on the upstream side of the orifice (5), a pressure sensor (3) provided between the control valve (1) and the orifice (5), and an operation controller (6) for outputting to a driver (2) of the control valve (1) a control signal (Qy) representing the difference between a rate-of-flow signal (Qc=KP1) generated by calculation based on the pressure (P1) measured by the pressure sensor (3) and a rate-of-flow command signal (Qs), and the pressure (P1) on the upstream side of the orifice (5) is adjusted by opening/closing the control valve (1) so as to regulate the rate of flow on the downstream side of the orifice (5).

公开(公告)号：EP1455393A1

公开(公告)日：2004-09-08

申请号：EP02786074.1

申请日：2002-12-10

申请人： Ohmi, Tadahiro ,  Tokyo Electron Limited

发明人： OHMI, Tadahiro ,  Kotani, Koji, c/o Dept. of Elec. Eng. Graduate ,  Sugawa, Sh., c/o Management Science & Tech.

IPC分类号： H01L27/092

CPC分类号： H01L29/045 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/66795 ,  H01L29/7851

摘要： A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.

摘要翻译： CMOS器件包括具有形成在硅衬底的（100）表面上并具有不同晶面的结构的p沟道MOS晶体管和n沟道MOS晶体管，在这样的结构上形成的高质量栅极绝缘膜 通过微波等离子体工艺和其上形成的栅电极，其中设置上述结构的尺寸和形状，使得载流子迁移率在p沟道MOS晶体管和n沟道MOS晶体管之间平衡。

公开(公告)号：EP1434253A1

公开(公告)日：2004-06-30

申请号：EP02800747.4

申请日：2002-10-02

申请人： Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  SHIGETOSHI, Sugawa

IPC分类号： H01L21/00

CPC分类号： H01L29/518 ,  H01L21/28202 ,  H01L29/045 ,  H01L29/78

摘要： In a semiconductor device in which a plurality of field effect transistors are formed on a silicon surface having substantially a orientation, the field effect transistors are disposed on the silicon surface such that a direction connecting a source region and a drain region of the field effect transistor is coincident to a substantially direction.

摘要翻译： 在其中场效应晶体管的多元性是在基本上具有<110>取向的硅表面上形成的半导体器件中，场效应晶体管被布置在硅表面搜索进行了连接的源极区域和所述漏极区域的方向 场效应晶体管是重合的大致<110>方向。

公开(公告)号：EP1377138A1

公开(公告)日：2004-01-02

申请号：EP02707231.3

申请日：2002-03-28

申请人： Tokyo Electron Limited ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  HIRAYAMA, Masaki, Tohoku University, Elect. Engin. ,  SUGAWA, Shigetoshi, Tohoku Uni., Elect. Engin. ,  GOTO, Tetsuya, Tohoku University, Elect. Engin.

IPC分类号： H05H1/00 ,  H01L21/31

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J37/32954 ,  H01J37/3299

摘要： A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave reflected by the plasma that is generated in the process chamber. Moreover, an incidence monitor (36) and a frequency monitor (48) monitor the frequency of the,microwave generated by a magnetron (24). An electric power supplied to the magnetron (24) is controlled based on the monitored electric power of the reflected wave and the monitored frequency. This method thus controls plasma density to a constant level.

摘要翻译： 通过等离子体处理装置的波导（26）将微波引入处理室，从而产生等离子体。 反射监视器（40）和电力监视器（42）监视由处理室中产生的等离子体反射的反射波的电功率。 此外，入射监视器（36）和频率监视器（48）监视由磁控管（24）产生的微波的频率。 基于受监测的反射波电力和被监视频率来控制提供给磁控管（24）的电力。 因此，该方法将等离子体密度控制到恒定水平。

公开(公告)号：EP1347506A1

公开(公告)日：2003-09-24

申请号：EP01272543.8

申请日：2001-12-27

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  SUGAWA, S.,c/o DEP. ELECTRONIC ENGINEERING GRAD. ,  HIRAYAMA, M., c/o DEP. ELECTRONIC ENGINEERING GRAD ,  SHIRAI, Y., c/o DEP. ELECTRONIC ENGINEERING GRAD.

IPC分类号： H01L21/316

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is generated by a mixed gas of a second inert gas and one or more gaseous molecules, and a silicon compound layer containing at least a part of the elements constituting the gaseous molecules is formed on the surface of the silicon gas.

摘要翻译： 在包括多个硅基晶体管或电容器的半导体器件的制造方法中，预先在硅表面的至少一部分中存在氢，并且通过将硅表面暴露于第一惰性气体等离子体 。 此后，通过第二惰性气体和一种或多种气体分子的混合气体产生等离子体，并且在硅气体的表面上形成含有构成气态分子的至少一部分元素的硅化合物层。