摘要:
The invention relates to a component with at least one layer or a layer system consisting of porous material, in particular silicon or silicon oxide. At least one section of the pores or all pores of the porous material are filled with a substance, the index of refraction thereof being alterable by an external influence. The index of refraction of the substance can advantageously be changed or adjusted by a voltage or an electric current.
摘要:
The optical transmission apparatus has an optical modulator (2) of Mach-Zehnder type, a light source (1) which supplies an optical signal to the optical modulator (2), a branching filter (3) for taking out a part of an output optical signal, an optical spectrum monitor (4) for monitoring an optical spectrum of an output optical signal taken out, an error signal generator circuit (11) for generating an error signal that shows a bias voltage error based on a result of this monitoring, and a bias voltage control circuit (5) for applying a bias voltage added with this error signal to the optical modulator (2).
摘要:
An article comprising an optical cavity includes two mirrors, at least one of which is advantageously movable, that are spaced from and parallel to one another. In some embodiments, both mirrors are formed from unstressed single crystal silicon. The single crystal silicon used in some embodiments is advantageously sourced from single crystal silicon-on-insulator ("SOI") wafers. In a method in accordance with the present invention, a first mirror is patterned in the thin silicon layer of a first SOI wafer. A standoff is disposed on the thin silicon layer near the first mirror. The thin silicon layer of a second SOI wafer is attached to the standoff such that there is a gap between the two, spaced, thin silicon layers. The thin silicon layer of the second SOI wafer is released forming a movable mirror by removing the thick layer of silicon and the buried oxide from that wafer.
摘要:
In an optical device having a diffraction grating and at least two surfaces for reflecting light, the oscillation state is switched between a first oscillation state mainly based on resonance by distributed reflection by the diffraction grating, and a second oscillation state mainly based on Fabry-Pérot resonance between the two surfaces. The characteristics of one of two modes to be used are improved at the cost of coherence of the other mode.
摘要:
Optical signals are dispersed according to their wavelength by an optical path length difference generator (26) that couples a single pathway (12) conveying a plurality of different wavelength signals to multiple pathways (52, 54, 56, 58) separately conveying the different wavelength signals. The optical path length generator (26) can be formed by a reflective stack having a plurality of partially reflective surfaces for reflecting successive portions of the energy of each of the different wavelength signals along different length optical paths.
摘要:
In an optical device having a diffraction grating and at least two surfaces for reflecting light, the oscillation state is switched between a first oscillation state mainly based on resonance by distributed reflection by the diffraction grating, and a second oscillation state mainly based on Fabry-Pérot resonance between the two surfaces. The characteristics of one of two modes to be used are improved at the cost of coherence of the other mode.
摘要:
An asymetric Fabry-Perot (FP) modulator includes a quantum well structure having wider (approximately 150Å) than usual (about 100Å) wells. The FP cavity has a resonance at a wavelength of an excitonic absorption peak of the QW structure. Although the maximum change in absorption under applied bias is less with 150Å wells than with 100Å wells, the characteristics of the electroabsorption are also altered, with the result that the largest change occurs at the wavelength of the band-edge el-hhl exciton at zero bias. Absorption can be reduced by biasing the QW and hence the AFPM can have a normally-off (zero bias, zero reflectivity) characteristic. Such an arrangement makes possible higher contrast modulation and/or lower operating voltages. The FP modulator may be used in SEEDs.
摘要:
A multi-layer mirror structure included in a surface-normal semiconductor optical cavity is fabricated in a deposition reactor dedicated to that purpose alone. Additional layers of the device are subsequently deposited on top of the mirror structure in a second reactor. In practice, the dedicated reactor produces layers whose thickness variations over their entire extents are considerably less than the thickness variations of layers made in the second reactor. This coupled with the fact that the actual achieved thickness of the mirror structure can be conveniently measured before commencing deposition of a prescribed thickness of the additional layers makes it possible to fabricate a specified-thickness optical cavity within tight tolerances in a high-yield manner.