摘要:
Disclosed is a projection optical system specifically to be used with extreme ultraviolet (EUV) light having a wavelength not less than 10 nm and not greater than 20 nm. The projection optical system has six mirrors sequentially reflecting light in an order from the object side toward the image side and being disposed to define a coaxial system, wherein each of the six mirrors has a curvature radius not greater than 1500 mm.
摘要:
An image forming apparatus forms image information by introducing a light beam (6) emitted from a light source (1) and deflected by a light deflecting device (4) to the surface (7) of an image carrying member (10) through an optical image forming system (5) and then by scanning the surface of the image carrying member using that light beam. The surface (7) to be scanned of the image carrying member (10) is shaped into a form which corresponds to the optical characteristics of the optical forming system. Consequently, the resultant image forming apparatus has a simple structure and is capable of forming high definition images.
摘要:
A scanning optical device for scanning a material to be scanned with beams emitted from a light source (1) thereof, has a storage device for storing information relating to the quantity of deviation of a scanning optical system. The convergent position of the beams is adjustable in the direction of the optical axis by at least partially controlling the elements of the scanning optical system in accordance with information relating the quantity of deviation supplied by the storage device. The quantity of deviation such as an image distortion of the scanning optical system can be compensated by a simple structure. Therefore, a recording device or reading device employing the scanning optical system exhibiting high resolution, low cost and a capability of preventing deterioration in the gradation expression can be realized.
摘要:
Disclosed is a projection optical system (100) for projecting a pattern of a mask placed on an object plane (MS), onto a substrate placed on an image plane (W). The projection optical system is arranged so that an intermediate image (MI) of the pattern formed on the mask, is formed between a third reflection surface (M3) and a fourth reflection surface (M4). In accordance with a particular shape of the third reflection surface or with particular disposition, high-precision projection is ensured without enlargement in size of the whole system.
摘要:
An exposure apparatus includes an illumination optical system (20) for illuminating a pattern formed on an object (R) with light from a light source (10), a projection optical system (30) for projecting, onto a plate (W), an image of a pattern illuminated by the illumination optical system, the projection optical system including a mirror (M1-M6), and a detection system (1a,3a,4a) for detecting a positional offset of the image of the pattern.
摘要:
Disclosed is a projection optical system specifically to be used with extreme ultraviolet (EUV) light having a wavelength not less than 10 nm and not greater than 20 nm. The projection optical system has six mirrors sequentially reflecting light in an order from the object side toward the image side and being disposed to define a coaxial system, wherein each of the six mirrors has a curvature radius not greater than 1500 mm.
摘要:
Disclosed is a projection optical system (100) for projecting a pattern of a mask placed on an object plane (MS), onto a substrate placed on an image plane (W). The projection optical system is arranged so that an intermediate image (MI) of the pattern formed on the mask, is formed between a third reflection surface (M3) and a fourth reflection surface (M4). In accordance with a particular shape of the third reflection surface or with particular disposition, high-precision projection is ensured without enlargement in size of the whole system.
摘要:
An X-ray exposure apparatus includes a stage (1) for holding a reflection type mask (MS) having a multilayered reflection pattern for circuit manufacturing, a stage (50) for holding a wafer (WF) to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing a plurality of curved reflecting mirrors (M1, M2, M3) coated with multilayer films, for receiving X-rays from a mask (MS) and directing them to a wafer (WF) to expose the wafer to the pattern of the mask with the X-rays in a reduced scale.