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    Memory cell array comprising nanogap memory elements
    11.
    发明公开
    Memory cell array comprising nanogap memory elements 有权
    包含纳米间隙存储器元件的存储器单元阵列

    公开(公告)号：EP2202798A2

    公开(公告)日：2010-06-30

    申请号：EP09179362.0

    申请日：2009-12-16

    申请人： Funai Electric Advanced Applied Technology Research Institute Inc. ,  Funai Electric Co., Ltd.

    发明人： Takahashi, Tsuyoshi ,  Hayashi, Yutaka ,  Masuda, Yuichiro ,  Furuta, Shigeo ,  Ono, Masatoshi

    IPC分类号： H01L27/24 ,  G11C13/00

    CPC分类号： H01L27/24 ,  G11C13/00 ,  G11C13/0069 ,  G11C13/02 ,  G11C2013/0071 ,  G11C2013/009 ,  G11C2213/79

    摘要： Disclosed is a memory cell array (10) including word lines (WL), first bit lines (BL1) and second bit lines (BL2) respectively connected to memory cells (100), wherein each memory cell (100) includes a MOS transistor (110) and a nanogap element (120) having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.

    摘要翻译： 公开了包括分别连接到存储单元（100）的字线（WL），第一位线（BL1）和第二位线（BL2）的存储单元阵列（10），其中每个存储单元（100）包括MOS晶体管 110）和纳米间隙元件（120），所述纳米间隙元件（120）具有第一导电层和第二导电层以及通过施加预定电压而电阻值改变的间隙，并且通过指定第一位线来写入数据以将其连接到地， 并向第二位线供应写入电压，并且通过指定字线来读取，并且指定第一位线以向第二位线供应低于写入电压的读取电压，并且字线在 字线的电压成为栅极阈值电压以上，驱动电压与栅极阈值电压的总和以下。

    Memory cell array comprising nanogap memory elements
    13.
    发明公开
    Memory cell array comprising nanogap memory elements 有权
    包含纳米间隙存储器元件的存储器单元阵列

    公开(公告)号：EP2202799A3

    公开(公告)日：2013-09-04

    申请号：EP09179363.8

    申请日：2009-12-16

    申请人： Funai Electric Co., Ltd. ,  Funai Electric Advanced Applied Technology Research Institute Inc.

    发明人： Takahashi, Tsuyoshi ,  Furuta, Shigeo ,  Masuda, Yuichiro ,  Ono, Masatoshi

    IPC分类号： H01L27/24 ,  G11C13/00 ,  G11C13/02

    CPC分类号： H01L27/24 ,  G11C13/00 ,  G11C13/0069 ,  G11C13/02 ,  G11C2013/0071 ,  G11C2013/009 ,  G11C2213/79

    摘要： Disclosed is a memory cell array (10) including: word lines (WL) and first and second bit lines (BL1,BL2) respectively connected to memory cells (100), wherein each memory cell (100) includes a MOS transistor (110) and a nanogap element (120) formed inside a contact hole, the switching element includes first and second conductive layers and a gap in which a resistance value is changed by applying a predetermined voltage, each word line is connected to a gate electrode, each first bit line is connected to a second electrode, each second bit line is connected to the second conductive layer, and data is written by supplying a write voltage to the first bit line connected to a selected memory cell and specifying the word line connected to the memory cell, and data is read by supplying a read voltage to the first bit lines connected to the memory cell and specifying the word line connected to the memory cells.

    摘要翻译： 公开了一种存储器单元阵列（10），包括：分别连接到存储器单元（100）的字线（WL）和第一和第二位线（BL1，BL2），其中每个存储器单元（100）包括MOS晶体管（110） 和形成在接触孔内的纳米间隙元件（120），所述开关元件包括第一导电层和第二导电层以及通过施加预定电压而改变电阻值的间隙，每个字线连接到栅电极，每个第一 位线连接到第二电极，每个第二位线连接到第二导电层，并且通过向与所选存储器单元连接的第一位线提供写入电压并且指定连接到存储器的字线来写入数据 通过向连接到存储单元的第一位线提供读电压并指定连接到存储单元的字线来读取数据。

    Voice input device, its manufacturing method and information processing system
    15.
    发明公开
    Voice input device, its manufacturing method and information processing system 审中-公开
    语音输入设备，其制造方法和信息处理系统

    公开(公告)号：EP2364036A2

    公开(公告)日：2011-09-07

    申请号：EP11166417.3

    申请日：2007-11-21

    申请人： Funai Electric Advanced Applied Technology Research Institute Inc. ,  Funai Electric Co., Ltd.

    发明人： Takano, Rikuo ,  Sugiyama, Kiyoshi ,  Fukuoka, Toshimi ,  Ono, Masatoshi ,  Horibe, Ryusuke ,  Maeda, Shigeo ,  Tanaka, Fuminori ,  Inoda, Takeshi ,  Choji, Hideki

    IPC分类号： H04R1/04 ,  H04R1/40 ,  H04R31/00

    CPC分类号： H04R1/04 ,  H04R1/406 ,  H04R19/005 ,  H04R31/006 ,  H04R2499/11

    摘要： A voice input device includes a first microphone (710-1) that includes a first diaphragm, a second microphone (710-2) that includes a second diaphragm, and a differential signal generation section (720) that generates a differential signal that indicates a difference between a first voltage signal and a second voltage signal, the first diaphragm and the second diaphragm being disposed so that a noise intensity ratio is smaller than an input voice intensity ratio (input voice component intensity ratio), and the differential signal generation section (720) including a gain section (760) that amplifies the first voltage signal by a predetermined gain, and a differential signal output section (740) that generates and outputs a differential signal that indicates a difference between the first voltage signal amplified by the gain section and the second voltage signal.

    摘要翻译： 一种语音输入装置包括：第一麦克风（710-1），其包括第一膜片;第二麦克风（710-2），其包括第二膜片;以及差分信号生成部分（720），其生成差分信号， 第一电压信号和第二电压信号之间的差异，第一振动膜和第二振动膜被设置为使得噪声强度比小于输入声音强度比（输入声音分量强度比），并且差分信号生成部（ 其特征在于，包括：增益部，将所述第一电压信号放大预定的增益;以及差分信号输出部，生成并输出差分信号，该差分信号表示由所述增益部放大的所述第一电压信号 和第二电压信号。

    Memory cell array comprising nanogap memory elements
    17.
    发明公开
    Memory cell array comprising nanogap memory elements 有权
    包含纳米间隙存储器元件的存储器单元阵列

    公开(公告)号：EP2202797A2

    公开(公告)日：2010-06-30

    申请号：EP09179361.2

    申请日：2009-12-16

    申请人： Funai Electric Advanced Applied Technology Research Institute Inc. ,  Funai Electric Co., Ltd.

    发明人： Takahashi, Tsuyoshi ,  Hayashi, Yutaka ,  Masuda, Yuichiro ,  Furuta, Shigeo ,  Ono, Masatoshi

    IPC分类号： H01L27/24 ,  G11C13/00

    CPC分类号： H01L27/24 ,  G11C13/00 ,  G11C13/0069 ,  G11C13/02 ,  G11C2013/0071 ,  G11C2013/009 ,  G11C2213/79

    摘要： Disclosed is a memory cell array (10) including word lines (WL), first bit lines (BL1) and second bit lines (BL2) respectively connected to memory cells (100), wherein each memory cell (100) includes a MOS transistor (110) and a nanogap element (120) having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the first bit line to connect it to a sense amplifier (51), specifying the word line and supplying a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the word line voltage becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.

    摘要翻译： 公开了包括分别连接到存储单元（100）的字线（WL），第一位线（BL1）和第二位线（BL2）的存储单元阵列（10），其中每个存储单元（100）包括MOS晶体管 110）和纳米间隙元件（120），所述纳米间隙元件（120）具有第一导电层和第二导电层以及通过施加预定电压而电阻值改变的间隙，并且通过指定第一位线来写入数据以将其连接到地， 并向第二位线提供写入电压，并且通过指定第一位线来读取它以将其连接到读出放大器（51），指定字线并将低于写入电压的读取电压提供给第二位线 并且当字线电压变为栅极阈值电压或更大以及驱动电压和栅极阈值电压之和或更小时指定字线。

    Translation system, translation program, and bilingual data generation method
    18.
    发明公开
    Translation system, translation program, and bilingual data generation method 审中-公开
    翻译系统，翻译程序，并为双语数据生成方法

    公开(公告)号：EP1986107A3

    公开(公告)日：2008-12-10

    申请号：EP08007847.0

    申请日：2008-04-23

    申请人： Funai Electric Advanced Applied Technology Research Institute Inc. ,  Funai Electric Co., Ltd.

    发明人： Takano, Rikuo ,  Shirai, Satoshi ,  Oshima, Kazuyoshi ,  Ono, Masatoshi

    IPC分类号： G06F17/28

    CPC分类号： G06F17/2827 ,  G06F17/2795 ,  G06F17/2836

    摘要： A translation system including: a bilingual data storage section, a plurality of pieces of first language simple sentence data and a plurality of pieces of second language simple sentence data being stored in the bilingual data storage section while being associated with each other so that the first language simple sentences and the second language simple sentences respectively make pairs; and a target language simple sentence data output section which outputs target language simple sentence data corresponding to a target language simple sentence which is a translation of a given source language simple sentence based on source language simple sentence data corresponding to the source language simple sentence. The target language simple sentence data output section receives first-language-source-language simple sentence data, selects first language simple sentence data from the plurality of pieces of the first language simple sentence data stored in the bilingual data storage section based on the received first-language-source-language simple sentence data, and outputs the second language simple sentence data associated with the selected first language simple sentence data as the target language simple sentence data.

    Translation system, translation program, and bilingual data generation method
    19.
    发明公开
    Translation system, translation program, and bilingual data generation method 审中-公开
    翻译系统，翻译程序和双语数据生成方法

    公开(公告)号：EP1986107A2

    公开(公告)日：2008-10-29

    申请号：EP08007847.0

    申请日：2008-04-23

    申请人： Funai Electric Advanced Applied Technology Research Institute Inc. ,  Funai Electric Co., Ltd.

    发明人： Takano, Rikuo ,  Shirai, Satoshi ,  Oshima, Kazuyoshi ,  Ono, Masatoshi

    IPC分类号： G06F17/28

    CPC分类号： G06F17/2827 ,  G06F17/2795 ,  G06F17/2836

    摘要： A translation system including: a bilingual data storage section, a plurality of pieces of first language simple sentence data and a plurality of pieces of second language simple sentence data being stored in the bilingual data storage section while being associated with each other so that the first language simple sentences and the second language simple sentences respectively make pairs; and a target language simple sentence data output section which outputs target language simple sentence data corresponding to a target language simple sentence which is a translation of a given source language simple sentence based on source language simple sentence data corresponding to the source language simple sentence. The target language simple sentence data output section receives first-language-source-language simple sentence data, selects first language simple sentence data from the plurality of pieces of the first language simple sentence data stored in the bilingual data storage section based on the received first-language-source-language simple sentence data, and outputs the second language simple sentence data associated with the selected first language simple sentence data as the target language simple sentence data.

    摘要翻译： 一种翻译系统，包括：双语数据存储部分，多条第一语言简单句子数据和多条第二语言简单句子数据被存储在双语数据存储部分中，同时彼此相关联，从而第一 语言简单句和第二语言简单句分别成对; 以及目标语言简单语句数据输出部分，其基于与源语言简单语句相对应的源语言简单语句数据，输出与作为给定源语言简单语句的翻译的目标语言简单语句对应的目标语言简单语句数据。 目标语言简单语句数据输出部分接收第一语言源语言简单语句数据，基于所接收的第一语言从存储在双语数据存储部分中的多条第一语言简单语句数据中选择第一语言简单语句数据 并且将与所选择的第一语言简单句子数据相关联的第二语言简单句子数据输出为目标语言简单句子数据。