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公开(公告)号：EP2202797A3
公开(公告)日：2013-08-28
申请号：EP09179361.2
申请日：2009-12-16
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array (10) including word lines (WL), first bit lines (BL1) and second bit lines (BL2) respectively connected to memory cells (100), wherein each memory cell (100) includes a MOS transistor (110) and a nanogap element (120) having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the first bit line to connect it to a sense amplifier (51), specifying the word line and supplying a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the word line voltage becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.
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2.发明公开Method of fabricating a resistive switching element including nanogap electrodes 有权用于与纳米间隙电极的电阻开关元件的制备方法
公开(公告)号：EP2239796A3
公开(公告)日：2013-05-22
申请号：EP10159482.8
申请日：2010-04-09
发明人： Furuta, Shigeo , Sumiya, Touru , Masuda, Yuichiro , Takahashi, Tsuyoshi , Hayashi, Yutaka , Ono, Masatoshi
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/16 , Y10T29/49082 , Y10T29/49105
摘要： Disclosed is a fabrication method of an element (1) with nanogap electrodes including a first electrode (20), a second electrode (60) provided above the first electrode, and a gap (70) provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode (20); forming a spacer (30) on an upper surface of the first electrode; forming the second electrode (60) in contact with an upper surface of the spacer; and removing the spacer (30) to form the gap (70).
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公开(公告)号：EP2007167A3
公开(公告)日：2013-01-23
申请号：EP08011279.0
申请日：2008-06-20
发明人： Takano, Rikuo , Sugiyama, Kiyoshi , Fukuoka, Toshimi , Ono, Masatoshi , Horibe, Ryusuke , Tanaka, Fuminori , Choji, Hideki , Inoda, Takeshi
CPC分类号： H04R1/38 , H04R1/406 , H04R3/005 , H04R19/005 , H04R2499/11
摘要： A voice input-output device includes a voice input section and a voice output section. The voice input section includes a microphone unit, the microphone unit including a housing that has an inner space, a partition member that is provided in the housing and divides the inner space into a first space and a second space, the partition member being at least partially formed of a diaphragm, and an electrical signal output circuit that outputs an electrical signal that is the first voice signal based on vibrations of the diaphragm, a first through-hole through which the first space communicates with an outer space of the housing and a second through-hole through which the second space communicates with the outer space being formed in the housing. The voice output section includes: an ambient noise detection section that detects ambient noise during a call based on the first voice signal; and a volume control section that controls volume of the speaker based on a degree of the detected ambient noise.
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公开(公告)号：EP2202798B1
公开(公告)日：2014-12-03
申请号：EP09179362.0
申请日：2009-12-16
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
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公开(公告)号：EP2611212A2
公开(公告)日：2013-07-03
申请号：EP12196375.5
申请日：2012-12-10
CPC分类号： H04R1/38 , H04R3/005 , H04R19/016 , H04R2201/003 , H04R2499/11
摘要： In this microphone unit (110), a first sound hole (31) and a second sound hole (32) are provided to extend toward a surface of an electronic apparatus (100) internally mounted with a differential vibrating portion (14), intersecting with a main surface (21) of the electronic apparatus, and an end portion of the first sound hole closer to the surface intersecting with the main surface of the electronic apparatus and an end portion of the second sound hole closer to the surface intersecting with the main surface of the electronic apparatus are so arranged that the vertical distances of the end portions from the main surface of the electronic apparatus are different from each other.
摘要翻译： 在该麦克风单元（110）中，设置有第一声孔（31）和第二声孔（32），朝向内部安装有差动振动部（14）的电子设备（100）的表面延伸，与差动振动部 电子设备的主表面（21）和靠近与电子设备的主表面交叉的表面的第一音孔的端部和靠近与主电路相交的表面的第二音孔的端部 电子设备的表面被布置成使得端部离电子设备的主表面的垂直距离彼此不同。
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6.发明公开Switching element, method of manufacturing the switching element, and memory element array 有权切换使开关元件和存储元件矩阵的元素，方法
公开(公告)号：EP2028693A3
公开(公告)日：2012-06-06
申请号：EP08014730.9
申请日：2008-08-19
CPC分类号： H01L45/124 , H01L27/2463 , H01L45/04 , H01L45/12 , Y10S977/943 , Y10T29/49105
摘要： Disclosed is a switching element including: an insulative substrate (10); a first electrode (20) and a second electrode (40) provided to the insulative substrate; an interelectrode gap (50) between the first electrode and the second electrode, comprising a gap of a nanometer order which causes switching phenomenon of resistance by applying a predetermined voltage between the first electrode and the second electrode; and a sealing member (60) to seal the interelectrode gap such that the gap is retained.
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7.发明公开Memory element array comprising a switching element with a nanogap and a tunnel element 有权与纳米空腔的开关元件和隧道元件存储元件布置
公开(公告)号：EP2006912A3
公开(公告)日：2012-06-06
申请号：EP08010468.0
申请日：2008-06-09
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/003 , G11C2213/76 , H01L27/2418 , H01L45/04 , H01L45/124
摘要： Disclosed is a memory element array (100) comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements (70) each including a gap (71) of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements (40) respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.
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公开(公告)号：EP2202799B1
公开(公告)日：2014-09-17
申请号：EP09179363.8
申请日：2009-12-16
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
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9.发明授权Switching element, method of manufacturing the switching element, and memory element array 有权切换使开关元件和存储元件矩阵的元素，方法
公开(公告)号：EP2028693B1
公开(公告)日：2014-03-19
申请号：EP08014730.9
申请日：2008-08-19
CPC分类号： H01L45/124 , H01L27/2463 , H01L45/04 , H01L45/12 , Y10S977/943 , Y10T29/49105
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10.发明公开Method of fabricating a resistive switching element including nanogap electrodes 有权Nelsonücken-Metallelektroden的Herstellungsverfahrenfürein Widerstandsschaltelement
公开(公告)号：EP2239796A2
公开(公告)日：2010-10-13
申请号：EP10159482.8
申请日：2010-04-09
发明人： Furuta, Shigeo , Sumiya, Touru , Masuda, Yuichiro , Takahashi, Tsuyoshi , Hayashi, Yutaka , Ono, Masatoshi
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/16 , Y10T29/49082 , Y10T29/49105
摘要： Disclosed is a fabrication method of an element (1) with nanogap electrodes including a first electrode (20), a second electrode (60) provided above the first electrode, and a gap (70) provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode (20); forming a spacer (30) on an upper surface of the first electrode; forming the second electrode (60) in contact with an upper surface of the spacer; and removing the spacer (30) to form the gap (70).
摘要翻译： 公开了一种具有纳米隙电极的元件（1）的制造方法，所述纳米间隙电极包括设置在第一电极上方的第一电极（20），第二电极（60）和设置在第一电极和第二电极之间的间隙（70） 所述间隙为纳米级，以通过在所述第一电极和所述第二电极之间施加预定电压来允许电阻状态切换，所述方法包括：形成所述第一电极（20）; 在所述第一电极的上表面上形成间隔物（30）; 形成与间隔物的上表面接触的第二电极（60）; 并移除间隔件（30）以形成间隙（70）。
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