公开(公告)号：EP1249433A4

公开(公告)日：2005-01-05

申请号：EP00927747

申请日：2000-05-12

申请人： IBIDEN CO LTD

发明人： ITO YASUTAKA ,  HIRAMATSU YASUJI

IPC分类号： C04B35/581 ,  H01L21/00 ,  H01L21/683 ,  H01L23/15

CPC分类号： H01L21/67103 ,  C04B35/581 ,  H01L21/6831 ,  Y10T279/23 ,  Y10T428/24917 ,  Y10T428/30

摘要： A carbon-containing aluminium nitride sintered compact, characterized in that carbon is contained in a matrix comprising an aluminium nitride sintered compact in a amount such that, in its X-ray diffraction chart, a peak ascribed to the carbon can not be detected. The aluminium nitride sintered compact can secure a volume resistivity of 10 OMEGA .cm or more, and can assure high hiding property, great radiation calorie and high accuracy in the measurement by means of a thermoviewer.

公开(公告)号：EP1175127A4

公开(公告)日：2004-08-18

申请号：EP00976349

申请日：2000-11-20

申请人： IBIDEN CO LTD

发明人： ITO YASUTAKA ,  FURUKAWA MASAKAZU ,  HIRAMATSU YASUJI

IPC分类号： H01L21/00 ,  H05B1/02 ,  H05B3/14 ,  H05B3/26 ,  H05B3/28 ,  H05B3/00 ,  H01L21/027 ,  H05B3/20

CPC分类号： H05B1/0233 ,  H01L21/67248 ,  H05B3/143 ,  H05B3/265 ,  H05B3/283

摘要： A ceramic heater for uniformly heating such objects as silicon wafers, wherein a heat generator is formed on the surface or the inside of a ceramic plate, characterized in that a bottom-closed hole is formed which extends from the back to the front of a heating surface for heating an object, the bottom of the bottom-closed hole being located relatively closer to the heating surface than to the heat generator, the bottom-closed hole being provided with a temperature measuring element.

公开(公告)号：EP1229571A4

公开(公告)日：2003-01-29

申请号：EP01938705

申请日：2001-06-15

申请人： IBIDEN CO LTD

发明人： HIRAMATSU YASUJI ,  ITO YASUTAKA

IPC分类号： H05B3/20 ,  C04B35/581 ,  C04B35/584 ,  C23C14/50 ,  C23C16/46 ,  H01L21/00 ,  H05B3/10 ,  H05B3/14 ,  H05B3/16 ,  H05B3/18 ,  H05B3/68 ,  H05B3/74 ,  H01L21/02 ,  H01L21/66 ,  H01L21/68 ,  H05B3/26 ,  H05B3/28

CPC分类号： H01L21/67103 ,  H05B3/143

摘要： A hot plate which is excellent in heat conductivity and in temperature rise/fall characteristics, high in cooling efficiency in cooling, and especially excellent in temperature fall characteristics, and which comprises a resistance heating element formed on the surface or inside of a ceramic substrate, characterized in that the ceramic substrate has a leakage amount of up to 10 Pa.m /sec (He) as measured by a helium leak detector.

摘要翻译： 本发明提供一种导热性和升温/降温特性优异，冷却时的冷却效率高，特别是降温特性优异且在陶瓷基板的表面或内部形成有电阻发热体的热板， 其特征在于，所述陶瓷衬底具有由氦泄漏检测器测量的高达10 -7 Pa.m 3 / sec（He）的泄漏量。

公开(公告)号：EP1199908A4

公开(公告)日：2003-01-22

申请号：EP00952002

申请日：2000-08-14

申请人： IBIDEN CO LTD

发明人： ITO YASUTAKA

IPC分类号： H01L21/00 ,  H05B3/14 ,  H05B3/26 ,  H05B3/20 ,  H05B3/10 ,  H05B3/16 ,  H05B3/18 ,  H05B3/28 ,  H05B3/74

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/265

摘要： The invention provides a ceramic heater superior in the uniformity of temperature using a heater substrate made of high-heat-conductivity ceramic. A discoid ceramic heater (100) has circular heater patterns (2) of substantially equal width formed on or in the surface of a ceramic substrate (1).

摘要翻译： 本发明提供使用由高导热性陶瓷制成的加热器基板的温度均匀性优异的陶瓷加热器。 盘状陶瓷加热器（100）具有形成在陶瓷衬底（1）的表面上或表面内的具有基本相同宽度的圆形加热器图案（2）。

公开(公告)号：EP1120829A4

公开(公告)日：2009-05-27

申请号：EP99961446

申请日：1999-12-28

申请人： IBIDEN CO LTD

发明人： ITO YASUTAKA ,  HIRAMATSU YASUJI

IPC分类号： H01L21/683 ,  H01L21/68 ,  G01R31/28 ,  H01L21/66 ,  H01L23/13

CPC分类号： H01L21/6831 ,  H01L21/6833

摘要： A semiconductor production device ceramic plate which is optimum for a semiconductor production device including a hot plate, electrostatic chuck and wafer prober, because, when the ceramic plate is used as a heater, a silicon wafer can be heated to a uniform temperature in its entirety without being damaged, and when used as an electrostatic chuck, a satisfactory chucking force is available, the ceramic plate being provided such that a semiconductor wafer is placed on a surface of a ceramic substrate or a semiconductor wafer is held a specified distance away from the surface of the ceramic substrate, characterized in that the surface, on or above which the semiconductor wafer is placed or held, of the ceramic substrate has a flatness of 1 to 50 mu m in a measurement range of -10 mm in terms of outer periphery end-to-end length.

公开(公告)号：EP1191002A4

公开(公告)日：2005-01-26

申请号：EP01906299

申请日：2001-02-26

申请人： IBIDEN CO LTD

发明人： HIRAMATSU YASUJI ,  ITO YASUTAKA

IPC分类号： C04B35/08 ,  C04B35/10 ,  C04B35/14 ,  C04B35/565 ,  C04B35/575 ,  C04B35/581 ,  C04B35/583 ,  C04B35/584 ,  H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  H05B3/14 ,  H05B3/74 ,  H01L23/15

CPC分类号： H05B3/746 ,  B32B18/00 ,  B32B38/145 ,  B32B2038/042 ,  B32B2311/08 ,  C04B35/08 ,  C04B35/10 ,  C04B35/14 ,  C04B35/5607 ,  C04B35/5611 ,  C04B35/5622 ,  C04B35/5626 ,  C04B35/565 ,  C04B35/575 ,  C04B35/58014 ,  C04B35/581 ,  C04B35/583 ,  C04B35/584 ,  C04B35/6264 ,  C04B35/6303 ,  C04B2235/3201 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/3821 ,  C04B2235/386 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/422 ,  C04B2235/446 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/726 ,  C04B2235/728 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/408 ,  C04B2237/50 ,  C04B2237/62 ,  C04B2237/704 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6833 ,  H01L21/6835 ,  H01L2924/19041 ,  H05B3/143 ,  H05B3/74 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/26 ,  Y10T428/265

摘要： The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.

公开(公告)号：EP1211725A4

公开(公告)日：2003-02-26

申请号：EP01929994

申请日：2001-05-09

申请人： IBIDEN CO LTD

发明人： HIRAMATSU YASUJI ,  ITO YASUTAKA

IPC分类号： H01L21/00 ,  H01L21/683 ,  H05B3/14 ,  H05B3/26 ,  H01L21/68 ,  H05B3/10 ,  H05B3/18

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  H05B3/143 ,  H05B3/265

摘要： An electrostatic chuck allowing the temperature of a ceramic substrate to be raised and lowered at a sufficiently high rate even if the diameter of the ceramic substrate exceeds 190 mm, particularly, even if the size of the ceramic substrate is increased such that the diameter thereof is equal to or more than 300 mm, wherein a temperature control means is provided on the ceramic substrate, an electrostatic electrode is formed on the ceramic substrate, and a ceramic dielectric film is applied onto the electrostatic electrode, characterized in that the diameter of the ceramic substrate exceeds 190 mm, the thickness thereof is 20 mm or thinner, and the ceramic dielectric film contains 0.1 to 20 wt% of oxygen.

公开(公告)号：EP1229570A4

公开(公告)日：2003-02-12

申请号：EP01938699

申请日：2001-06-15

申请人： IBIDEN CO LTD

发明人： HIRAMATSU YASUJI ,  ITO YASUTAKA

IPC分类号： H05B3/20 ,  C04B35/581 ,  C23C14/50 ,  C23C16/46 ,  H01L21/00 ,  H01L21/66 ,  H05B3/10 ,  H05B3/14 ,  H05B3/16 ,  H05B3/18 ,  H05B3/26 ,  H05B3/68 ,  H01L21/02 ,  H05B3/28

CPC分类号： H01L21/67103 ,  H05B3/143 ,  H05B3/265

摘要： A hot plate capable of having the temperature of a heating surface accurately measured by a thermo-viewer due to a low infrared transmittance of up to 10% provided by a ceramic substrate, comprising a conductive layer formed on the surface or inside of the ceramic substrate, characterized in that the ceramic substrate has an infrared wavelength transmittance of 0 or up to 10%.

摘要翻译： 一种热板，由于由陶瓷基板提供的低至10％的低红外线透射率，所以能够通过热观察器准确地测量加热表面的温度，所述陶瓷基板包括在陶瓷基板的表面或内部形成的导电层 其特征在于，所述陶瓷基底具有0或高达10％的红外波长透射率。