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    Method of deposition of Al2O3/SiO2 stacks, from TMA or TEA and silicon precursors
    18.
    发明公开
    Method of deposition of Al2O3/SiO2 stacks, from TMA or TEA and silicon precursors 有权
    氟化铝/氧化铝 - 氧化铝 - 氧化铝 - 氧化铝

    公开(公告)号：EP2484801A1

    公开(公告)日：2012-08-08

    申请号：EP11305113.0

    申请日：2011-02-07

    申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  Technische Universiteit Eindhoven

    发明人： Lachaud, Christophe ,  Madec, Alain ,  Kessels, Wilhelmus Mathijs Marie ,  Dingemans, Gijs

    IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/314

    CPC分类号： C23C16/402 ,  C23C16/403 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L31/02167 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method of forming an Al 2 O 3 /SiO 2 stack comprising successively the steps of:
    a) providing a substrate into a reaction chamber;
    b) injecting into the reaction chamber, through an ALD process, at least one silicon containing compound selected from the group consisting of:







    BDEAS Bis(diethylamino)silane
    SiH 2 (NEt 2 ) 2 ,

    BDMAS Bis(dimethylamino)silane
    SiH 2 (NMe 2 ) 2 ,

    BEMAS Bis(ethylmethylamino)silane
    SiH 2 (NEtMe) 2 ,

    DIPAS (Di-isopropylamido)silane
    SiH 3 (NiPr 2 ),

    DTBAS (Di tert-butylamido)silane
    SiH 3 (NtBu 2 );


    c) injecting into the reaction chamber an oxygen source selected in the list:
    oxygen, ozone, oxygen plasma, water, CO 2 plasma, N 2 O plasma;

    d) reacting at a temperature comprised between 20°C and 400°C, preferably lower or equal to 250°C, into the reaction chamber at least one of the silicon containing compounds and the oxygen source in order to obtain the SiO 2 layer deposited onto the substrate;
    e) injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound being Al(Me) 3 or Al(Et) 3 ;
    f) injecting the oxygen source as defined in step c);
    g) reacting at a temperature comprised between 20°C and 400°C, preferably lower or equal to 250°C, into the reaction chamber at least one of the aluminium containing compounds and the oxygen source in order to obtain the Al 2 O 3 layer deposited onto the SiO 2 layer issued of step d).

    摘要翻译： 一种形成Al 2 O 3 / SiO 2堆叠的方法，包括以下步骤：a）将基底提供到反应室中; b）通过ALD工艺将至少一种选自以下的含硅化合物注入反应室：BDEAS双（二乙基氨基）硅烷SiH 2（NEt 2）2，BDMAS双（二甲基氨基）硅烷SiH 2（NMe 2）2，BEMAS双（乙基甲基氨基）硅烷SiH 2（NEtMe）2，DIPAS（二异丙基氨基）硅烷SiH 3（NiPr 2），DTBAS（二叔丁基酰氨基）硅烷SiH 3（NtBu 2）; c）将在氧气，臭氧，氧等离子体，水，CO 2等离子体，N 2 O等离子体中选出的氧源注入反应室; d）在20℃至400℃，优选低于或等于250℃的温度下，将反应室中的至少一种含硅化合物和氧源进行反应，以获得沉积的SiO 2层 到基板上; e）通过ALD工艺在所述氧化硅膜上注入至少一种含铝化合物为Al（Me）3或Al（Et）3; f）注入步骤c）中定义的氧源; g）在20℃至400℃，优选低于或等于250℃的温度下，将至少一种含铝化合物和氧源在反应室中反应，以获得Al 2 O 3 层沉积到步骤d）发布的SiO 2层上。