-
11.发明公开Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same 有权氮化物半导体，氮化物半导体装置中，发光半导体器件及其制造方法
公开(公告)号：EP1104031A3
公开(公告)日：2005-10-12
申请号：EP00124829.3
申请日：2000-11-14
发明人： Kidoguchi, Isao , Ishibashi, Akihiko , Miyanaga, Ryoko , Sugahara, Gaku , Suzuki, Masakatsu , Kume, Masahiro , Ban, Yuzaburo , Morita, Kiyoyuki , Tsujimura, Ayumu , Hasegawa, Yoshiaki
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/007 , H01L33/405 , H01L33/46 , H01S5/2077 , H01S5/2201 , H01S5/32341 , H01S5/4031 , H01S2304/00
摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al u Ga v In w N, wherein 0 ≦ u, v, w ≦ 1 and u + v + w = 1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of Al x Ga y In z N, wherein 0 ≦ x, y, z ≦ 1 and x + y + z = 1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
-
公开(公告)号：EP0757393A3
公开(公告)日：1999-11-03
申请号：EP96112366.8
申请日：1996-07-31
CPC分类号： H01L33/40 , H01L33/30 , H01L33/32 , H01S5/0421 , H01S5/0425 , H01S5/2231 , H01S5/2275 , H01S5/2277 , H01S5/3054
摘要： A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.
-
13.发明公开Optical disk recording/reproducing method and apparatus 审中-公开Aufzeichnungs- und Wiedergabeverfahren und -vorrichtungfüreine optische Platte
公开(公告)号：EP0952574A1
公开(公告)日：1999-10-27
申请号：EP99107567.2
申请日：1999-04-15
发明人： Kume, Masahiro , Ban, Yazuburo , Kidoguchi, Isao , Kamiyama, Satoshi , Tsujimura, Ayumu , Ishibashi, Akihiko , Hasegawa, Yoshiaki , Miyanaga, Ryoko
CPC分类号： G11B7/126 , G11B7/005 , G11B7/128 , G11B7/135 , G11B7/1369 , G11B11/10515 , G11B11/10543
摘要： Between a semiconductor laser diode (12) and an optical disk (11), a collimator lens (13) for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter (14) for attenuating the collimated beam having passed through the collimator lens, and a beam splitter (15) for splitting reflected light from the optical disk are disposed. In addition, a collecting lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk (11) is further disposed.
摘要翻译： 在半导体激光二极管（12）和光盘（11）之间，用于准直从半导体激光二极管输出的激光束的准直透镜（13），用于衰减经过的准直光束的液晶光学快门（14） 准直透镜和用于分离来自光盘的反射光的分束器（15）。 此外，还设置有用于将由准直透镜获得的准直光束收集在光盘（11）的数据保持表面上的收集透镜。
-
公开(公告)号：EP0579244B1
公开(公告)日：1996-09-04
申请号：EP93111443.3
申请日：1993-07-16
IPC分类号： H01S3/19
CPC分类号： H01S5/2231 , H01S5/1039 , H01S5/204 , H01S5/205 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/3211 , H01S5/32325
-
15.发明公开A semiconductor laser and a method for producing the same 失效Halbleiterlaser和Verfahren zur Herstellung。
公开(公告)号：EP0579244A2
公开(公告)日：1994-01-19
申请号：EP93111443.3
申请日：1993-07-16
IPC分类号： H01S3/19
CPC分类号： H01S5/2231 , H01S5/1039 , H01S5/204 , H01S5/205 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.
摘要翻译： 一种半导体激光器，包括半导体衬底和形成在半导体衬底上的多层结构，所述多层结构包括有源层，一对覆盖层，有源层插在其间，以及用于将电流注入到条带中的电流限制层 形状的有源层的预定区域。 电流限制层包括在除了与有源层的预定区域对应的区域之外的区域中形成的第一电流阻挡层。 第一电流阻挡层的折射率高于一对包覆层的折射率，并且能带隙大于有源层的能带隙。
-
-
-
-
搜索结果
15 条记录 (耗时 0.017 秒)
