利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

24 条记录 (耗时 0.018 秒)

    Oxide superconductor
    11.
    发明公开
    Oxide superconductor 失效
    OXID-Supraleiter。

    公开(公告)号：EP0333513A1

    公开(公告)日：1989-09-20

    申请号：EP89302682.3

    申请日：1989-03-17

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Ichikawa, Yo ,  Kitabatake, Makota ,  Adachi, Hideaki ,  Setsune, Kentaro ,  Wasa, Kiyotaka

    IPC分类号： H01L39/12 ,  H01L39/24

    CPC分类号： C23C14/087 ,  C04B35/4504 ,  C04B35/4512 ,  C04B35/4521 ,  H01L39/126 ,  H01L39/2435

    摘要： Disclosed is an oxide superconductor in which S, Se, Te or Po is added to an oxide high transition temperature superconductive material. As a result, the critical current density is increased, especially in a ranfe of and a high controllability and a large critical current density can be obtained stably and at high reproducibility. Furthermore, by depositing a thin film of this kind of material by ion process, a thin film of superconductor large in critical current density can be formed.
    Also disclosed are superconductive materials high in controllability and having high critical current density, the method for fabricating thin film of such materials, and the target for sputtering to be used in such fabrica­tion.

    摘要翻译： 公开了一种氧化物超导体，其中S，Se，Te或Po被添加到氧化物高转变温度超导材料中。 结果，临界电流密度增加，特别是在的范围内，并且可以稳定地且以高再现性获得高可控性和大的临界电流密度。 此外，通过离子处理沉积这种材料的薄膜，可以形成临界电流密度大的超导体薄膜。 还公开了高可控性和高临界电流密度的超导材料，这种材料的薄膜的制造方法以及用于这种制造的溅射靶。

    Field-effect type superconducting device
    13.
    发明公开
    Field-effect type superconducting device 失效
    Supraleitendes Bauelement des Feld-Effekt-Typs

    公开(公告)号：EP0701292A3

    公开(公告)日：1997-03-26

    申请号：EP95118306.0

    申请日：1993-06-29

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Mizuno, Koichi ,  Adachi, Hideaki ,  Ichikawa, Yo ,  Setsune, Kentaro

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/146 ,  H01L39/228

    摘要： A field-effect type superconducting device includes a channel layer (2). The channel layer includes superimposed first and second sub-layers (11, 12) which include respective first and second Bi-based oxide compounds containing Cu. Both source electrode (5) and drain electrode (6) contact the channel layer. A gate insulating film (3) made of insulating material extends on the channel layer. A gate electrode (4, 14, 15, 16) extends on the gate insulating film.

    摘要翻译： 场效应型超导装置包括沟道层（2）。 沟道层包括含有Cu的Bi基氧化物。 源电极（5）与沟道层接触。 漏电极（6）与沟道层接触。 由绝缘材料制成的栅极绝缘膜（3）在沟道层上延伸。 栅电极（4）在栅极绝缘膜上延伸。 还公开了具有在绝缘膜（3）上延伸并具有收缩部分（50B）的控制电极（14）的超导装置。

    Surface acoustic wave module and method of manufacturing the same
    15.
    发明公开
    Surface acoustic wave module and method of manufacturing the same 失效
    AkustischesOberflächenwellenmodulund Verfahren zu seiner Herstellung

    公开(公告)号：EP0731558A1

    公开(公告)日：1996-09-11

    申请号：EP95117825.0

    申请日：1995-11-10

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Ichikawa, Yo ,  Adachi, Hideaki ,  Setsune, Kentaro ,  Kawashima, Shunichiro

    IPC分类号： H03H9/02

    CPC分类号： H03H9/1071 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02921 ,  H03H9/25 ,  Y10T29/42

    摘要： A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module's electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes an electrode (42) for transmitting a surface acoustic wave and another electrode (44) for receiving a surface acoustic wave, a surface acoustic wave transmitting substrate (41), a high resistance thin film (47), and a thin film (46) for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film (47) from that at the substrate (41). The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate (41), of forming the electrodes (42, 44) on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film's resistivity.

    摘要翻译： 表面声学模块是稳定的，其操作频率可以高精度地变化。 一种制造表面声学模块的方法可以防止模块的电极在将一片模块分离成单个部件时被破坏。 表面声学模块包括用于传播表面声波的电极（42）和用于接收表面声波的另一电极（44），表面声波传输基板（41），高电阻薄膜（47）和 薄膜（46），用于区分高电阻薄膜（47）处的表面声波与基板（41）的传播速度。 该方法包括以下步骤：在表面声波传播基板（41）的片材上形成金属膜，在金属膜上形成电极（42,44），并将金属膜照射到金属膜上等 以提高胶片的电阻率。

    Heterojunction bipolar transistor and method for fabricating the same
    19.
    发明公开
    Heterojunction bipolar transistor and method for fabricating the same 审中-公开
    Heteroübergang-Bipolartransistor和Verfahren zur Herstellung

    公开(公告)号：EP1037284A2

    公开(公告)日：2000-09-20

    申请号：EP00105401.4

    申请日：2000-03-14

    申请人： Matsushita Electric Industrial Co., Ltd.

    发明人： Asai, Akira ,  Oonishi,Teruhito ,  Takagi, Takeshi ,  Saitoh, Tohru ,  Hara, Yoshihiro ,  Yuki, Koichiro ,  Nozawa, Katsuya ,  Kanzawa, Yoshihiko ,  Katayama, Koji ,  Ichikawa, Yo

    IPC分类号： H01L29/737 ,  H01L21/331 ,  H01L27/06 ,  H01L21/8249

    CPC分类号： H01L29/66242 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

    摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.

    摘要翻译： 在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极。 通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电器开口的范围覆盖集电极层和器件隔离的一部分。 在位于集电体开口内部的半导体衬底的一部分上形成作为外部基底的第二导电类型的半导体层，而在半导体衬底中形成与外部基底相同的导电类型的接点防漏层。 因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。