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11.发明授权
公开(公告)号：EP0930624B1
公开(公告)日：2003-10-22
申请号：EP99100579.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
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公开(公告)号：EP1187103A3
公开(公告)日：2003-01-08
申请号：EP01117737.5
申请日：2001-07-30
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3272 , H01L27/228 , H01L43/08
摘要： A magnetoresistance effect device includes: a free layer (101) whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer (103); and a pinned layer (102) whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer (103) which is opposite to a face on which the free layer (101) is formed, wherein the pinned layer (102) includes: a first non-magnetic film (104) for exchange-coupling; and first and second magnetic films (105,106) which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film (104), and the first non-magnetic film (104) includes one of the oxides of Ru, Ir, Rh, and Re.
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13.发明公开Magnetoresistance effect device, and method for producing the same 审中-公开Magnetowiderstandseffektvorrichtung und Herstellungsverfahren desselben
公开(公告)号：EP1134815A2
公开(公告)日：2001-09-19
申请号：EP01113584.5
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应器件包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。 反铁磁膜包含α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm以下。
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14.发明公开Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 审中-公开交换耦合膜，磁阻阵列，磁阻磁头，以及用于交替离合器膜的制备方法
公开(公告)号：EP1122749A3
公开(公告)日：2001-08-16
申请号：EP01109403.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention comprises a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer comprising an (AB) 2 O x layer, wherein A is a single element, and B is a single element, and wherein : O denotes an oxygen atom; 2.8
摘要翻译： 交换耦联薄膜的本发明包括其被设置成与所述铁磁性层为钉扎铁磁性层的磁化方向的铁磁层和钉扎层中的所有，钉扎层包括（AB）2 O x层的，worin A是 单个元件，而B是一个单独的元件，并worin：O表示氧的原子; 2.8
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15.发明公开Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 审中-公开交换耦合膜，磁阻效应器件，磁阻效应头及交换耦合膜的制造方法
公开(公告)号：EP1122749A2
公开(公告)日：2001-08-08
申请号：EP01109403.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention comprises a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer comprising an (AB) 2 O x layer, wherein A is a single element, and B is a single element, and wherein : O denotes an oxygen atom; 2.8
摘要翻译： 本发明的交换耦合膜包括铁磁层和与铁磁层接触设置的钉扎层，用于钉扎铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中A是 单个元素，并且B是单个元素，并且其中：O表示氧原子; 2.8
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16.发明公开
公开(公告)号：EP0905802A3
公开(公告)日：1999-05-06
申请号：EP98118338.7
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应装置包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，它们以此顺序直接或通过下层设置在非磁性基板上。 反铁磁膜包含α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm或更小。
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