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15 条记录 (耗时 0.01 秒)

    Microwave plasma processing apparatus
    11.
    发明公开
    Microwave plasma processing apparatus 有权
    微波等离子体处理装置

    公开(公告)号：EP1879213A3

    公开(公告)日：2010-05-19

    申请号：EP07019845.2

    申请日：2000-05-25

    申请人： TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

    发明人： Ohmi, Tadahiro ,  Hirayama, Masaki

    IPC分类号： H01J37/32

    CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate (111) is provided between a dielectric material shower plate (103), and a plasma excitation gas (mainly an inert gas) and a process gas are discharged from different locations. High energy ions can be incident on a surface of the substrate (114) by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall (102) and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna (110) and the dielectric material separation wall (102) and a thickness of the dielectric material shower plate (103) are optimized so as to be capable of supplying a microwave having a large power.

    Microwave plasma processing apparatus
    12.
    发明公开
    Microwave plasma processing apparatus 有权
    Plasmabearbeitungsvorrichtung

    公开(公告)号：EP1879213A2

    公开(公告)日：2008-01-16

    申请号：EP07019845.2

    申请日：2000-05-25

    申请人： TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

    发明人： Ohmi, Tadahiro ,  Hirayama, Masaki

    IPC分类号： H01J37/32 ,  C23C16/511 ,  C23C16/455

    CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate (111) is provided between a dielectric material shower plate (103), and a plasma excitation gas (mainly an inert gas) and a process gas are discharged from different locations. High energy ions can be incident on a surface of the substrate (114) by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall (102) and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna (110) and the dielectric material separation wall (102) and a thickness of the dielectric material shower plate (103) are optimized so as to be capable of supplying a microwave having a large power.

    摘要翻译： 在微波等离子体处理装置中，在介电材料喷淋板（103）和等离子体激发气体（主要是惰性气体）之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出 。 高能离子可以通过将格子状淋浴板接地而入射到基板（114）的表面上。 为了使等离子体激发效率达到最大化，并且与此同时，缝隙天线（110）和 电介质材料分离壁（102）和介电材料喷淋板（103）的厚度被优化以便能够供应具有大功率的微波。

    Gas supply path structure, gas supply method, laser oscillating apparatus, exposure apparatus, and device production method
    14.
    发明公开
    Gas supply path structure, gas supply method, laser oscillating apparatus, exposure apparatus, and device production method 有权
    Gaszuführungsstrukturund -verfahren，Laseroszillator，Belichtungsvorrichtung，und Verfahren zur Herstellung einer Einrichtung

    公开(公告)号：EP0997225A1

    公开(公告)日：2000-05-03

    申请号：EP99308543.0

    申请日：1999-10-28

    申请人： TADAHIRO OHMI ,  CANON KABUSHIKI KAISHA

    发明人： Ohmi, Tadahiro ,  Osawa, Hiroshi ,  Ino, Kazuhide ,  Shirai, Yasuyuki ,  Tanaka, Nobuyoshi ,  Shinohara, Toshikuni ,  Hirayama, Masaki

    IPC分类号： B23K26/00 ,  H01S3/036

    CPC分类号： H01S3/036

    摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

    摘要翻译： 气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。 用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统 流体入口和/或流体出口处。