摘要:
There are disclosed a pair of solar battery-sealing sheets composed of a light-receiving side-sealing sheet and a backside-sealing sheet for solar electricity generating elements of a solar battery module and reducing the coming-around of the backside-sealing sheet, wherein the melt peak temperature based on a differential scanning calorimetry (DSC) of the backside-sealing sheet is higher than the melt peak temperature based on the differential scanning calorimetry (DSC) of the light-receiving side-sealing sheet; and a solar battery module using the light-receiving side-sealing sheet and the backside-sealing sheet of the solar battery-sealing sheet, and a method for manufacturing the solar battery module.
摘要:
A coating material for a gas barrier includes polycarboxylic acid, a polyamine compound, a polyvalent metal compound, and a base, in which (molar number of -COO- groups included in the polycarboxylic acid)/(molar number of amino groups included in the polyamine compound) =100/20 to 100/90.
摘要:
There are disclosed a pair of solar battery-sealing sheets composed of a light-receiving side-sealing sheet and a backside-sealing sheet for solar electricity generating elements of a solar battery module and reducing the coming-around of the backside-sealing sheet, wherein the melt peak temperature based on a differential scanning calorimetry (DSC) of the backside-sealing sheet is higher than the melt peak temperature based on the differential scanning calorimetry (DSC) of the light-receiving side-sealing sheet; and a solar battery module using the light-receiving side-sealing sheet and the backside-sealing sheet of the solar battery-sealing sheet, and a method for manufacturing the solar battery module.
摘要:
A method for manufacturing an electronic device, the method at least including a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer, a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side; and a step (C) of removing the adhesive film from the wafer after the adhesive film is irradiated with an ultraviolet ray. This adhesive film includes a base material layer, and an adhesive resin layer which is provided on one surface side of the base material layer and configured with an ultraviolet curable adhesive resin material. In the step (C), regarding the adhesive resin layer of the adhesive film after being irradiated with an ultraviolet ray, a storage elastic modulus at 100°C measured under the following conditions, defined as E' (100°C), is 1.0 × 106 to 3.5 × 107 Pa, and E' (100°C)/E' (-15°C) is 2.0 × 10-3 to 1.5 × 10-2. (Conditions) A dynamic viscoelasticity is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode.
摘要:
Provided is a method of producing an electronic device, including a step (A) of preparing a structure (60) which includes an electronic component (10) having a circuit forming surface (10A), and an adhesive laminated film (50) which includes a base material layer (20) and an adhesive resin layer (40) and in which the adhesive resin layer (40) is attached to the circuit forming surface (10A) of the electronic component (10) such that the circuit forming surface (10A) is protected; a step (B) of back-grinding a surface of the electronic component (10) opposite to the circuit forming surface (10A) in a state of being attached to the adhesive laminated film (50); a step (C) of dicing the electronic component (10) in a state of being attached to the adhesive laminated film (50); and a step (D) of forming an electromagnetic wave-shielding layer (70) on the separated electronic components (10) in a state of being attached to the adhesive laminated film (50), in this order, in which the identical adhesive laminated film is used as the adhesive laminated film (50) in the step (A), the step (B), the step (C), and the step (D) .
摘要:
A method for manufacturing electronic apparatus includes : a step (A) of preparing a structure (100) provided with an adhesive film (50) and one or two or more electronic components (70) affixed to an adhesive surface of the adhesive film (50) ; a step (B) of disposing the structure (100) in the electronic component testing apparatus (200) such that the electronic component (70) is positioned over an electronic component installation region (85) of a sample stand (80) of the electronic component testing apparatus (200) with the adhesive film (50) interposed between the electronic component (70) and the electronic component installation region (85), the electronic component testing apparatus (200) being provided with the sample stand (80) including the electronic component installation region (85) and a probe card (90) that is provided at a position facing the sample stand (80) and includes a probe terminal (95); a step (C) of evaluating the properties of the electronic component (70) in a state of being affixed to the adhesive film (50) with the probe terminal (95) being in contact with a terminal (75) of the electronic component (70); and a step (D) of picking up the electronic component (70) from the adhesive film (50) after the step (C). In addition, the sample stand (80) is provided with a first vacuum suction unit (210) in a region (89) on an outer peripheral side which is different from the electronic component installation region (85), the first vacuum suction unit (210) vacuum-sucking the adhesive film (50), and at least in the step (C), the first vacuum suction unit (210) vacuum-sucks a region (58) of the adhesive film (50) to which no electronic component (70) is affixed.
摘要:
A method for manufacturing a semiconductor device of the present invention includes at least the following three steps. (A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the semiconductor wafer (B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer (C) A step of radiating ultraviolet rays to the adhesive film (100) and then removing the adhesive film (100) from the semiconductor wafer As the adhesive film (100), an adhesive film including a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10) is used. In addition, in the adhesive film (100), the adhesive resin layer (20) includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of a surface of the adhesive resin layer (20) after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.
摘要:
A method for manufacturing a semiconductor device according to the present invention includes at least the following four steps: (A) a step of preparing a structure (100) including an adhesive laminate film (50) having a heat-resistant resin layer (10), a flexible resin layer (20) and an adhesive resin layer (30) in this order, and one or two or more semiconductor chips (70) adhered to the adhesive resin layer (30); (B) a step of confirming an operation of the semiconductor chips (70) in a state of being adhered to the adhesive resin layer (30); (C) a step of, after the step (B), peeling the heat-resistant resin layer (10) from the adhesive laminate film (50); and (D) a step of, after the step (C), picking up the semiconductor chips (70) from the adhesive resin layer (30).