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公开(公告)号：EP0238830B1
公开(公告)日：1992-07-29
申请号：EP87102014.5
申请日：1987-02-13
发明人： Mori, Hidefumi 4-16-8, Minamiogikubo , Tsuzuki, Nobuyori 4-10, Hamadacho , Yamamoto, Mitsuo 1282, Josuihoncho
CPC分类号： C30B25/14 , C30B25/18 , Y10S148/057 , Y10S148/065 , Y10S438/933
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公开(公告)号：EP0232619B1
公开(公告)日：1992-03-25
申请号：EP86310103.6
申请日：1986-12-23
IPC分类号： H01L21/205 , H01L29/72 , C23C16/24
CPC分类号： H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/0262 , Y10S148/057 , Y10S148/169 , Y10S438/909
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13.发明公开
公开(公告)号：EP0371854A3
公开(公告)日：1990-10-10
申请号：EP89403223.4
申请日：1989-11-22
申请人： MCNC
发明人： Reisman, Arnold , Jones, Gary Wayne
IPC分类号： C23C16/04 , C23C16/14 , C23F4/00 , H01L21/285
CPC分类号： H01L21/28562 , C23C16/04 , C23C16/14 , H01L21/30655 , H01L21/76879 , Y10S148/057 , Y10S148/058
摘要： A method for selectively depositing refractory metal (for example tungsten) on the surface (15) of a semiconductor substrate to form an electrical contact, without depositing refractory metal on an adjacent mask layer (11). Refractory metal halide gas and hydrogen gas are simultaneously flowed through a reaction chamber to deposit the refractory metal on the substrate surface and to a lesser extent on the mask layer. Then the flow of hydrogen is interrupted to cause the refractory metal halide to etch the refractory metal which forms on the mask layer. The deposition and etch steps are repeated until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only refractory metal halide gas and pulsed flow of hydrogen gas. A low resistivity refractory metal layer is produced, and damage to the semiconductor surface is minimized.
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14.发明公开Method of manufacturing compound semiconductor thin film 失效Verfahren zur Herstellung einerDünnschichthalbleiterlegierung。
公开(公告)号：EP0390552A2
公开(公告)日：1990-10-03
申请号：EP90303352.0
申请日：1990-03-29
发明人： Ashizawa, Yasuo, c/o Intellectual Property Div. , Noda, Takao, c/o Intellectual Property Div. , Kushibe, Mitsuhiro, c/o Intellectual Property Div. , Funemizu, Masahisa, c/o Intellectual Property Div. , Eguchi, Kazuhiro, c/o Intellectual Property Div. , Ohba, Yasuo, c/o Intellectual Property Div. , Kokubun, Yoshihiro, c/o Intellectual Property Div.
IPC分类号： H01L21/205 , C30B25/02 , C30B29/42
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02579 , H01L21/0262 , Y10S148/057 , Y10S148/11
摘要： A p-type GaAs or AℓGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1 × 10¹⁸ cm⁻³ and 1 × 10²⁰ cm⁻³. At least one of trimethyl gallium and trimethyl aluminium is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700°C and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.
摘要翻译： 通过MOCVD法形成p型GaAs或A l GaAs薄膜。 在薄膜的生长步骤中，薄膜掺杂高浓度的碳原子，形成受体水平，使得薄膜的载流子浓度在1×10 8 cm之间 3和1×10 2 cm -3。 使用三甲基镓和三甲基铝中的至少一种作为III族元素的原料气态化合物，并且使用胂作为V族元素的原料气体化合物。 该薄膜通过V族元素供给速率与III族元素供给速率的摩尔比V / III的外延生长形成，其设定为0.3〜2.5的小值，温度为450℃ 至700℃，压力为1至400托。 在这些条件下形成的薄膜表现出镜面状的光滑表面，膜生长速度取决于V族元素的供给速率。
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公开(公告)号：EP0307995A3
公开(公告)日：1989-07-05
申请号：EP88201878.1
申请日：1988-09-02
CPC分类号： C23C16/45523 , B01J4/02 , B01L3/0289 , C23C16/45561 , C30B25/14 , Y10S148/006 , Y10S148/057 , Y10S148/11 , Y10S148/169 , Y10S438/935
摘要： In order, in the epitaxial production of semiconductor products and of articles provided with a layer, to be able to make the junction between the layers applied to the substrates atomically sharp, it is important to be able to change the gas mixture, to be introduced into a pulsed reactor or MBE reactor, rapidly, accurately and without losses in respect of quantity and of composition. To this purpose, each of the gases to be introduced into the reactor (13) is conveyed to a separate gas pipette (9) and thereafter the content of the gas pipette is cyclically passed, by means of a pressure differential, into the pulse reactor, with the composition of the mixture being changed per one or more cycles.
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公开(公告)号：EP0232619A3
公开(公告)日：1988-04-06
申请号：EP86310103
申请日：1986-12-23
IPC分类号： H01L21/205 , H01L29/72
CPC分类号： H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/0262 , Y10S148/057 , Y10S148/169 , Y10S438/909
摘要： There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.
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