公开(公告)号：EP2778264A1

公开(公告)日：2014-09-17

申请号：EP14158704.8

申请日：2014-03-11

申请人： Mitsubishi Materials Corporation

发明人： Nakada, Yoshinobu

IPC分类号： C30B29/06 ,  C30B11/02 ,  C30B11/14

CPC分类号： C01B33/02 ,  C30B11/02 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06 ,  Y10T428/21

摘要： A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

摘要翻译： 提供了一种用于半导体装置的硅构件。 硅构件具有与单晶硅制造的相同的性能，即使它是由单向凝固的硅制造的。 另外，也可以用于制造较大尺寸的部件。 通过将通过将由单晶硅板制成的晶种放置在坩埚的底部上并将单向凝固的晶体硅锭从每种晶体中生长获得的柱状晶体硅锭制成硅构件 坩埚中的熔融硅。

公开(公告)号：EP2773797A1

公开(公告)日：2014-09-10

申请号：EP12779085.5

申请日：2012-11-02

申请人： Vesuvius France S.A.

发明人： RANCOULE, Gilbert ,  MARTIN, Christian

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B29/06

CPC分类号： C30B11/002 ,  C30B11/14 ,  C30B29/06

摘要： The present invention concerns a crucible (1) for the production of crystalline semiconducting material ingots, such as silicon, said crucible comprising peripheral side walls (1b) and a floor (1a) at least a portion of said floor being coated with a top layer (2), characterized in that, said top layer (2) has a thickness, δ, of at least 500 μm and in that, at a deformation temperature below 1400 °C said top layer is plastically or viscously deformable.

公开(公告)号：EP2336398A4

公开(公告)日：2014-01-08

申请号：EP09815919

申请日：2009-09-28

申请人： HITACHI METALS LTD

发明人： OKUDA HIROYUKI ,  OKAMOTO NAOYUKI ,  ITOH SHINROH

IPC分类号： C30B29/22 ,  C09K11/78 ,  C30B9/10 ,  C30B11/00 ,  C30B11/14 ,  C30B17/00 ,  C30B29/10 ,  G01T1/202 ,  G21K4/00

CPC分类号： G01T1/202 ,  C09K11/778 ,  C30B9/10 ,  C30B11/00 ,  C30B11/14 ,  C30B17/00 ,  C30B29/10 ,  C30B29/22 ,  G21K4/00

公开(公告)号：EP2604728A1

公开(公告)日：2013-06-19

申请号：EP11193086.3

申请日：2011-12-12

申请人： Vesuvius France S.A.

发明人： Martin, Christian ,  Rancoule, Gilbert ,  Dubois, Laurent

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B29/06 ,  C30B35/00 ,  C30B28/06 ,  H01L31/18

CPC分类号： C30B11/002 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06 ,  C30B35/002 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The present invention concerns a crucible (1) for the production of crystalline semiconductor ingots, said crucible comprising an inner volume defined by a floor (1 a) which top surface comprises a planar portion defining a first horizontal plane (H) and peripheral side walls (1b) each comprising an inner surface comprising a planar portion substantially vertical and normal to the first, horizontal plane (H), said side walls (1 b) joining the floor (1 a) at the perimeter of the latter by forming a radius of curvature, R1, of at least 1 mm, characterized in that, the intersecting line (hv) forming the intersection between the first, horizontal plane (H) and the prolongation of the vertical portion of the inner surface of each side wall (1 b) is entirely located on the side walls (1 b), on the floor (1 a), or in the inner volume of the crucible.

摘要翻译： 本发明涉及的坩埚（1）用于生产结晶半导体锭，所述坩埚包括计划由地板限定的内部容积（1 A），它顶表面包括一个平面部分限定的第一水平（H）和外周侧壁 （1b）的每一个都包括到内表面包括一个平面部分基本上竖直的且垂直于所述第一水平平面（H），所述侧壁（图1b）接合在地板（1）在后者的通过形成半径的周边 曲率R1，中的至少1毫米，在该特点，在形成第一水平面（H）和每个侧壁的内表面的垂直部分的延长之间的相交的交线（HV）（1 b）中完全位于地板上的（1），或在坩埚的内部容积的侧壁（1b）中。

公开(公告)号：EP1460153B1

公开(公告)日：2012-05-09

申请号：EP04015256.3

申请日：2000-08-01

申请人： Sumitomo Electric Industries, Ltd.

发明人： Hagi, Yoshiaki, c/o Itami Works of ,  Kato, Shigeto, c/o Yokohama Works of

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B29/42

CPC分类号： C30B29/40 ,  C30B9/00 ,  C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B11/14 ,  C30B29/42 ,  C30B29/62 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

摘要： A crystal growth vessel 2 for growing a crystal within a main container has a crystal growth starting portion 6 in which the crystal starts to grow, whereas the crystal growth starting portion 6 is formed from a material having a thermal conductivity higher than that of a material of the main container 4.

公开(公告)号：EP2364796A3

公开(公告)日：2011-12-14

申请号：EP10013173.9

申请日：1999-11-19

申请人： Rolls-Royce Corporation

发明人： Frasier, Donald J. ,  Schlienger, M. Eric ,  Kush, Matthew

IPC分类号： B22D7/04 ,  B22D27/13 ,  B29C41/04 ,  B29C41/08 ,  G03F7/004 ,  C30B11/14 ,  B22D27/04 ,  G03F7/00 ,  B29C67/00 ,  C30B29/52 ,  B22C7/02 ,  B22C9/04

CPC分类号： G03F7/0047 ,  B29C64/40 ,  B33Y10/00 ,  B33Y30/00 ,  C30B11/002 ,  C30B11/14 ,  C30B29/52 ,  G03F7/0037

摘要： A casting mold comprises a free form fabricated ceramic shell which has a thin outer wall defining a cavity adapted for receiving a molten metal. The shell is positioned within a container and spaced from the inner surface of the container. At least one support member substantially fills the space between the outer wall of the shell and the inner surface and reinforcing said shell.

摘要翻译： 铸造模具包括自由形状的制造的陶瓷壳体，其具有限定适于接收熔融金属的腔的薄的外壁。 壳体位于容器内并与容器的内表面间隔开。 至少一个支撑构件基本上填充壳体的外壁和内表面之间的空间，并加强所述外壳。

公开(公告)号：EP2364796A2

公开(公告)日：2011-09-14

申请号：EP10013173.9

申请日：1999-11-19

申请人： Rolls-Royce Corporation

发明人： Frasier, Donald J. ,  Schlienger, M. Eric ,  Kush, Matthew

IPC分类号： B22D7/04 ,  B22D27/13 ,  B29C41/04 ,  B29C41/08 ,  G03F7/004 ,  C30B11/14 ,  B22D27/04 ,  G03F7/00 ,  B29C67/00 ,  C30B29/52 ,  B22C7/02 ,  B22C9/04

CPC分类号： G03F7/0047 ,  B29C64/40 ,  B33Y10/00 ,  B33Y30/00 ,  C30B11/002 ,  C30B11/14 ,  C30B29/52 ,  G03F7/0037

摘要： A casting mold comprises a free form fabricated ceramic shell which has a thin outer wall defining a cavity adapted for receiving a molten metal. The shell is positioned within a container and spaced from the inner surface of the container. At least one support member substantially fills the space between the outer wall of the shell and the inner surface and reinforcing said shell.

摘要翻译： 铸模包括自由形式制造的陶瓷壳，其具有限定适于接收熔融金属的空腔的薄外壁。 外壳定位在容器内并与容器的内表面间隔开。 至少一个支撑构件基本上填充壳体的外壁和内表面之间的空间并且增强所述壳体。

公开(公告)号：EP2359958A1

公开(公告)日：2011-08-24

申请号：EP10013174.7

申请日：1999-11-19

申请人： Rolls-Royce Corporation

发明人： Frasier, Donal J. ,  Schlienger, M. ERic ,  Kush, Matthew

IPC分类号： B22D7/04 ,  B22D27/13 ,  B29C41/04 ,  B29C41/08 ,  G03F7/004 ,  C30B11/14 ,  B22D27/04 ,  G03F7/00 ,  B29C67/00

CPC分类号： G03F7/0047 ,  B29C64/40 ,  B33Y10/00 ,  B33Y30/00 ,  C30B11/002 ,  C30B11/14 ,  C30B29/52 ,  G03F7/0037

摘要： A method for fabricating a ceramic casting mold system comprises providing a stereolithography apparatus including a reservoir and an Energy source and providing a data file to the stereolithography apparatus that defines a plurality of cross sections of a casting mold system representative of a gas turbine engine component. A ceramic filled resin comprising ceramic particles, a monomer and an photoinitiator is placed within the reservoir. Using the energy source a cross section of the casting mold system is drawn on a layer of the ceramic filled resin to polymerize the monomer and form a substantially cured layer comprising a polymer binder holding the ceramic particles of the layer together. The substantially cured layer is covered with another layer of the ceramic filled resin. Another cross section of the casting mold system is drawn on the another layer of the ceramic filled resin to polymerize the monomer and form a substantially cured another layer comprising the polymer binder holding the ceramic particles of the another layer together, The process of covering and drawing is repeated for each of the plurality of cross sections to fabricate the casting mold system with a plurality of substantially cured layers.

摘要翻译： 一种制造陶瓷铸模系统的方法，包括提供包括储存器和能量源的立体光刻设备，并将数据文件提供给立体光刻设备，其定义了代表燃气涡轮发动机部件的铸模系统的多个横截面。 包含陶瓷颗粒，单体和光引发剂的陶瓷填充树脂放置在储存器内。 使用能源，将铸模系统的横截面绘制在陶瓷填充树脂的一层上，以聚合单体并形成基本上固化的层，其包含将层的陶瓷颗粒保持在一起的聚合物粘合剂。 基本固化的层被陶瓷填充树脂的另一层覆盖。 将铸模系统的另一横截面绘制在陶瓷填充树脂的另一层上，以聚合单体并形成基本固化的另一层，其包含将另一层的陶瓷颗粒保持在一起的聚合物粘合剂。覆盖和拉伸的过程 对于多个横截面中的每一个重复，以制造具有多个基本上固化的层的铸模系统。

公开(公告)号：EP2025434A1

公开(公告)日：2009-02-18

申请号：EP08252466.1

申请日：2008-07-18

申请人： United Technologies Corporation

发明人： Sauerhoefer, Marc ,  Marcin, John ,  Kennard, Lea D. ,  Turkington, Michael ,  Bullied, Steven ,  Murray, Stephen

IPC分类号： B22D27/04 ,  B22C9/04 ,  C30B11/00 ,  C30B11/14

CPC分类号： B22D27/045 ,  B22C9/043 ,  C30B11/00 ,  C30B11/14 ,  C30B29/52

摘要： A method of creating an article from investment casting includes forming a ceramic seed well (10), heating the ceramic seed well to form a hardened ceramic seed well (10), attaching a meltable pattern (30) to the hardened ceramic seed well (10), coating the hardened ceramic seed well and the meltable pattern with hardenable ceramic material (42), heating the hardenable ceramic material to melt the meltable pattern (30), removing the meltable pattern from the hardenable ceramic material (42), firing the hardenable ceramic material to form a ceramic mold (64) having a cavity (74), placing a seed (12) within the hardened ceramic seed well, and pouring molten metal (62) into the hardened ceramic seed well (10) and the cavity (74). The cavity of the ceramic mold is in communication with the hardened ceramic seed well (10).

摘要翻译： 一种从熔模铸造产生制品的方法包括形成陶瓷种子井（10），将陶瓷种子充分加热以形成硬化的陶瓷种子井（10），将可熔化图案（30）附着到硬化的陶瓷种子井（10 ），用可硬化陶瓷材料（42）涂覆硬化的陶瓷种子和可熔化图案，加热可硬化陶瓷材料以熔化可熔化图案（30），从可硬化陶瓷材料（42）中除去可熔化图案，焙烧可硬化陶瓷材料 陶瓷材料以形成具有空腔（74）的陶瓷模具（64），将种子（12）放置在硬化的陶瓷种子井内，以及将熔融金属（62）倾倒入硬化的陶瓷种子井（10）和空腔（ 74）。 陶瓷模具的腔体与硬化的陶瓷种子井（10）连通。

公开(公告)号：EP1793020A1

公开(公告)日：2007-06-06

申请号：EP06255730.1

申请日：2006-11-07

申请人： Rolls-Royce plc

发明人： D'Souza, Neil John ,  Jennings, Philip Andrew ,  Devendra, Keerthi

IPC分类号： C30B29/52 ,  C30B11/14 ,  F01D5/14

CPC分类号： C30B11/14 ,  C30B29/52 ,  F01D5/28 ,  F05D2230/211 ,  F05D2300/606 ,  F05D2300/607 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1036

摘要： Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilisation of a bi-crystal experiment to determine melt-back length LM and by consideration of the ingress distance d from potential initiation nucleation points on a perimeter 46 of a seed crystal 40, it is possible to determine a maximum ingress length d. By ensuring that the maximum ingress length d is less than or equal to a seed crystal diameter R, it is possible to project locus from potential nucleation points C 1 , C 2 in terms of potential radii for stray grain propagation. As the seed crystal 40 will have a known crystalline orientation, it will be possible to consider two divergent growth curves of the crystal 40 in terms of the stray grains propagating from the point C 1 , C 2 . In such circumstances, a connector channel 45 can be provided with a radius r = R / 4 in an area between the periphery 46 of the seed 40 and the locus 43, 44 of the stray grain maximum ingress distances d. In situations where it is found d exceeds the crystal radius R, it will be understood that the actual crystal diameter R used may be increased or adjustment made with regard to the melt-back length LM in order to alter the maximum ingress distance d.

摘要翻译： 先前的一些技术已经在为了形成单晶或预先确定的晶体学部件和物品被使用。 合成技术中的每一个都有自己独特的问题，包括易患错误。 通过在籽晶40的周边46中的双晶实验，以确定矿回熔长度LM和通过考虑从潜在起始成核点的进入距离d的利用率，所以能够确定矿的最大入口长度d。 通过确保确实的最大入口长度d小于或等于晶种直径R，所以可以从潜在的成核点的C 1投影轨迹，C 2在杂散晶粒传播潜在半径的条款。 作为籽晶40将具有已知的结晶取向，这将是可以考虑晶体40的两种趋生长曲线在杂散晶粒从点C 1，C第二传播方面 在求的情况下，连接器通道45可以在晶种40和晶杂散最大入口的距离D的轨迹43，44的外周46之间设置有半径r = R / 4的区域。 用于在其被发现D超过晶体半径R的情况下，这将是理解，DASS死实际晶体直径R可以增加或调整相对于回熔长度LM，以便改变最大的入口距离d制成。