摘要:
A polishing pad material is provided with a cellular polymeric layer containing elongated cells normal to the major surfaces of the material, such that the cell openings on the polishing surface of the material comprise a majority of the surface area, and the cells have a mean diameter of about 50 to 200 microns with the diameter of the surface openings being preferably larger than the cell diameters below the surface. The cells are preferably cone-shaped and have a depth at least 1.5 times the diameter of the surface openings. The pad material is formed from a poromeric material, preferably polyurethane elastomer, with microporous cell walls having pore diameters less than 0.1 times the diameter of the cells. The polishing pad material may be made according to conventional poromeric technology, but instead of removing the usual top poromeric skin, the poromeric layer is inverted and the original bottom poromeric skin and any attached substrate are removed to open and expose the cells at a plane corresponding to their largest diameters.
摘要:
A polishing pad (10) is formed as a one-piece article having a region (12) which is transparent and an adjacent region (14) which is opaque. The article (10) is formed by solidifying a flowable polymeric material which at least initially has a uniform composition. The flowable polymeric material is processed during a molding operation to provide the transparent region (12) and the adjacent opaque region (14). Types of polymeric material suitable for making the polishing pad (10) include a single thermoplastic material, a blend of thermoplastic materials, and a reactive thermosetting polymer.
摘要:
A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.
摘要:
Disclosed is a process for preparing activated compositions and the compositions derived therefrom which are suitable for polishing surfaces, particularly integrated circuits, wherein a base abrasive is activated by addition of a second cation whose oxide exhibits a higher polishing rate than the base abrasive alone. The activation is effected by chemical adsorption of the activating cation onto the base abrasive during cyclic impact in an aqueous medium whose pH is at a level which is favorable for adsorption of the activating cation onto the base abrasive surface.
摘要:
An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles between 0.2 and 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm, and an iron, nickel, and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.
摘要:
An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles between 0.2 and 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm, and an iron, nickel, and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.
摘要:
The present invention relates to a method of making or using an article of manufacture in the form of a polishing pad (10) for polishing or planarizing a surface of an electronic substrate, as well as a planarized semiconductor device made thereby. The pad comprises an elastomeric, polymeric matrix (14) impregnated with a plurality of hollow (22), flexible, polymeric microelements (16, 16'). The pad has a work surface (18) and a subsurface (24) proximate to the work surface. One portion (16') of the polymeric microelements is at the work surface and another portion (16) of the polymeric microelements is embedded within the subsurface of the pad that is not exposed to the working environment. The work surface of the pad is relatively softer than the subsurface as a result of mechanically opening or chemically altering the shells of at least some of the hollow, flexible, polymeric microelements located proximate the work surface such that the open polymeric microelements are less rigid than the polymeric microelements embedded in the subsurface, or by texturizing the work surface, thereby causing the work surface to be softer than the subsurface.
摘要:
A composition is provided, which is suitable for polishing SiO2, silicates, and silicon nitride, comprising an aqueous slurry of submicron SiO2 particles and a soluble inorganic salt or combination of soluble inorganic salts of total solution concentration below the critical coagulation concentration for the slurry, wherein the slurry pH is adjusted to within the range of about 9 to 10 by addition of a soluble amine or mixture of soluble amines. Optionally, the compositions of this invention may also comprise a polyhydric alcohol.
摘要:
A pad is provided for use on a machine for the polishing of silicon wafers which allows the use of optical detection of the wafer surface condition as the wafer is being polished. This is accomplished by constructing the entire pad or a portion thereof out of a solid uniform polymer sheet with no intrinsic ability to absorb or transport slurry particles and which is transparent to the light beam being used to detect the wafer surface condition by optical methods. Polymers which are transparent to light having a wavelength within the range of 190 to 3500 nanometers are suitable for the construction of these pads.