Position detecting device
    21.
    发明公开
    Position detecting device 失效
    位置检测装置

    公开(公告)号:EP0329430A3

    公开(公告)日:1990-03-14

    申请号:EP89301470.4

    申请日:1989-02-16

    IPC分类号: G01B11/14 G01B11/27 G03B41/00

    CPC分类号: G03F9/7023 G03F9/7049

    摘要: A device for detecting positional relationship between a first and second objects (2, 1) in a predetermined direction is disclosed. The device includes light source (10) projecting light upon the first object so that the light incident on the first object (2) is deflected thereby and emanates therefrom in a direction perpendicular to the predetermined direction; a light receiving portion (9) disposed in a direction in which the light having been deflected perpendicularly to the predetermined direction and having been deflected again by the second object advances, the light receiving portion being operable to detect the position of incidence of the light thereupon, wherein the position of the light upon the light receiving means is changeable with the position of incidence of the light upon the second object; and a detecting system for detecting the positional relationship between the first and second objects in the predetermined direction, on the basis of the detection by the light receiving portion.

    摘要翻译: 公开了一种用于检测第一和第二物体(2,1)之间在预定方向上的位置关系的装置。 该装置包括将光投射到第一物体上的光源(10),使得入射在第一物体(2)上的光由此偏转,并在垂直于预定方向的方向上发出; 沿与所述规定方向垂直的方向偏转并被所述第二物体再次偏转后的光向前进的方向配置的受光部(9),所述受光部能够检测所述光的入射位置 其中所述光在所述光接收装置上的位置可随着所述光在所述第二物体上的入射位置而改变; 以及检测系统,用于基于光接收部分的检测来检测第一和第二物体之间在预定方向上的位置关系。

    Light quantity controlling apparatus
    22.
    发明公开
    Light quantity controlling apparatus 失效
    Einrichtung zur Regelung der Lichtmenge。

    公开(公告)号:EP0357426A2

    公开(公告)日:1990-03-07

    申请号:EP89308824.5

    申请日:1989-08-31

    IPC分类号: H01S3/133 G01B11/00

    摘要: A position detecting apparatus (Fig. 1) usable for aligning a mask (15) and a semiconductor wafer (16), wherein a laser beam (14) produced by a semiconductor laser (1) is projected through a predetermined optical system to alignment marks (15a,16a) formed on the mask (15) and the wafer (16), and the light (17) reflected by the marks is detected by an accumulation type sensor (4) to produce an electric signal, from which the relative positional relation between the mask (15) and the wafer (16) is detected on the basis of the electric signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor (4) is controlled. In this apparatus, the beam emitting strength of the semiconductor laser (1) is made constant, and the control of the amount of light incident on the accumulation sensor (4) is effected by controlling (2) the operation period of the semiconductor laser (1). In addition, the actuation timing (7) of the semiconductor laser (1) is advanced from the accumulation start of the accumulation type sensor (4) by the time (Ts) required for the semiconductor laser (1) to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor (4) is precise.

    摘要翻译: 一种可用于对准掩模(15)和半导体晶片(16)的位置检测装置(图1),其中由半导体激光器(1)产生的激光束(14)通过预定的光学系统投射到对准标记 形成在掩模(15)和晶片(16)上的光(17a,16a),并且由积累型传感器(4)检测由标记反射的光(17),以产生电信号,相对位置 基于电信号检测掩模(15)和晶片(16)之间的关系。 为了获得正确的标记信号,控制入射在累积传感器(4)上的光量。 在该装置中,使半导体激光器(1)的光束发射强度恒定,并且通过控制(2)半导体激光器的操作周期(2)来实现入射到累积传感器(4)上的光量的控制 1)。 此外,半导体激光器(1)的激活定时(7)从累积型传感器(4)的累积开始到半导体激光器(1)所需的时间(Ts)之后被热稳定化 驱动。 由积累传感器(4)产生的标记检测信号是精确的。

    Measuring method and apparatus
    28.
    发明公开
    Measuring method and apparatus 失效
    Messverfahren und -vorrichtung。

    公开(公告)号:EP0449582A2

    公开(公告)日:1991-10-02

    申请号:EP91302636.5

    申请日:1991-03-26

    IPC分类号: G03F9/00 G03F7/20

    CPC分类号: G03F7/70633 G03F9/7049

    摘要: Disclosed is a method and apparatus for measuring a relative positional deviation between a first pattern (u) and a second pattern (L), printed on an article such as a semiconductor wafer (14) at different times, the measurement being based on detection of interference of diffraction lights (fA1u, fB2U, fA1L, fB2L) from at least one of the first and second printed patterns.

    摘要翻译: 公开了一种用于测量在不同时刻印刷在诸如半导体晶片的物品上的第一图案和第二图案之间的相对位置偏差的方法和装置,该测量基于来自至少一个的衍射光的干涉的检测 的第一和第二印刷图案。

    Alignment system
    29.
    发明公开
    Alignment system 失效
    对齐系统

    公开(公告)号:EP0361933A3

    公开(公告)日:1991-04-03

    申请号:EP89309914.3

    申请日:1989-09-28

    IPC分类号: G03F9/00

    CPC分类号: G03F9/7096 G03F9/7049

    摘要: An alignment system for aligning a mask and a wafer into a predetermined positional relationship, by using alignment marks provided on the mask and the wafer, is disclosed. In this system, light from a light source is directed to the alignment marks of the mask and the wafer and, then, the light from these alignment marks is detected by an accumulation type photoelectric converting device, for alignment of the mask and the wafer. The accumulation time of the photoelectric converting device is controlled to be sufficiently longer than or to be equal to a multiple, by an integral number, of the period of relative and natural vibration of the mask and the wafer. This makes it possible to reduce the effect of the relative vibration of the mask and the wafer upon the alignment result and, therefore, makes it possible to enhance the alignment precision.

    Light quantity controlling apparatus
    30.
    发明公开
    Light quantity controlling apparatus 失效
    轻量控制装置

    公开(公告)号:EP0357426A3

    公开(公告)日:1991-01-23

    申请号:EP89308824.5

    申请日:1989-08-31

    IPC分类号: H01S3/133 G01B11/00

    摘要: A position detecting apparatus (Fig. 1) usable for aligning a mask (15) and a semiconductor wafer (16), wherein a laser beam (14) produced by a semiconductor laser (1) is projected through a predetermined optical system to alignment marks (15a,16a) formed on the mask (15) and the wafer (16), and the light (17) reflected by the marks is detected by an accumulation type sensor (4) to produce an electric signal, from which the relative positional relation between the mask (15) and the wafer (16) is detected on the basis of the electric signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor (4) is controlled. In this apparatus, the beam emitting strength of the semiconductor laser (1) is made constant, and the control of the amount of light incident on the accumulation sensor (4) is effected by controlling (2) the operation period of the semiconductor laser (1). In addition, the actuation timing (7) of the semiconductor laser (1) is advanced from the accumulation start of the accumulation type sensor (4) by the time (Ts) required for the semiconductor laser (1) to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor (4) is precise.