公开(公告)号：EP0280905A2

公开(公告)日：1988-09-07

申请号：EP88101609.1

申请日：1988-02-04

申请人： HITACHI, LTD.

发明人： Kobori, Shigeyuki ,  Yamada, Kazuji ,  Kobayashi, Ryoichi ,  Miyazaki, Atsushi ,  Suzuki, Seikou

IPC分类号： G01L9/06 ,  H01L29/84 ,  H01L27/20

CPC分类号： H01L27/20 ,  G01L9/0042 ,  H01L29/84 ,  Y10T29/49103

摘要： A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed threbetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.

摘要翻译： 一种制造半导体绝对压力传感器单元的方法包括：将硅传感器晶片（10）和硅帽晶片（12）与布置在硅传感器晶片上的各个传感器芯片之间的硼硅酸盐玻璃层（32） 如图10所示，通过引入与硼硅酸盐玻璃层（32）接触并与硼硅酸盐玻璃层（32）对准的矩阵状导电层（28），在阳极接合操作期间，使用矩阵状导电层（28）作为负极， 获得强度，并且在完成阳极结合操作之后，硼硅酸盐玻璃层（32）中所含的钠离子保持远离结合区域。

公开(公告)号：EP2078933A2

公开(公告)日：2009-07-15

申请号：EP09000230.4

申请日：2009-01-09

申请人： Hitachi, Ltd.

发明人： Kanekawa, Nobuyasu ,  Kobayashi, Ryoichi ,  Koseki, Tomonobu

IPC分类号： G01D5/244 ,  G01D5/20

CPC分类号： G01D5/24461 ,  G01D5/20

摘要： An abnormality detection circuit for a resolver outputs a rotation angle signal 101 corresponding to a rotation angle of a rotor from a resolver winding 102. In the abnormality detection circuit, the resolver abnormality detection circuit applies a specified signal to one terminal of the resolver winding 102, determines whether the specified signal is superimposed on the rotation angle signal 101 outputted by an other terminal of the resolver winding 102, and detects abnormalities of the resolver based on results of the determination.

摘要翻译： 用于分解器的异常检测电路从旋转变压器绕组102输出对应于转子的旋转角度的旋转角度信号101.在异常检测电路中，解算器异常检测电路将指定的信号施加到旋转变压器绕组102的一个端子 确定指定信号是否叠加在由旋转变压器绕组102的另一个端子输出的旋转角度信号101上，并且基于确定结果来检测旋转变压器的异常。

公开(公告)号：EP0239094A3

公开(公告)日：1989-06-14

申请号：EP87104402.0

申请日：1987-03-25

申请人： HITACHI, LTD.

发明人： Miyazaki, Atsushi ,  Kobayashi, Ryoichi

IPC分类号： G01L9/06 ,  G01L1/22

CPC分类号： G01L19/148 ,  G01L1/2281 ,  G01L9/0054 ,  G01L9/065 ,  G01L19/0038

摘要： A semiconductor strain gauge bridge circuit device is disclosed to include a bridge circuit (2) of semiconductor strain gauges, a first zero-point temperature compensation circuit (3) connected to one (b) of a pair of output terminals of the bridge circuit and including a voltage-dividing resistor circuit (R 21 , R z2 ) generating a voltage substantially equal to a potential appearing at the one output terminal at a predetermined temperature, and a second zero-point temperature compensation circuit (4) connected to the other (d) of the output terminals and including a resistive element (R ZTH ) having a temperature characteristic similar to that of the semiconductor strain gauges.

公开(公告)号：EP0034807A1

公开(公告)日：1981-09-02

申请号：EP81101182.4

申请日：1981-02-19

申请人： Hitachi, Ltd.

发明人： Yamada, Kazuji ,  Sato, Hideo ,  Suzuki, Seiko ,  Kobayashi, Ryoichi ,  Nishihara, Motohisa

IPC分类号： G01L1/18 ,  G01L9/06 ,  H01L29/84

CPC分类号： G01L9/0054 ,  G01L9/065

摘要： The invention relates to a semiconductor strain gauge comprising four piezoresistive elements (10,12,14,16) which include a low impurity concentration diffused portion and a heavily-doped diffused portion.
The resistance values of the two low impurity concentration diffused portions opposite to one another are greater than the resistance values of the other two low impurity concentration portions. The resistances of the heavily-doped diffused portions are so selected that the resistances of the piezoresistive elements (10,12,14,16) are equal.

摘要翻译： 本发明涉及包括四个压阻元件（10,12,14,16）的半导体应变计，其包括低杂质浓度扩散部分和重掺杂扩散部分。 ...彼此相反的两个低杂质浓度扩散部分的电阻值大于其它两个低杂质浓度部分的电阻值。 选择重掺杂扩散部分的电阻使得压阻元件（10,12,14,16）的电阻相等。

公开(公告)号：EP0309920B1

公开(公告)日：1993-03-10

申请号：EP88115588.1

申请日：1988-09-22

申请人： HITACHI, LTD.

发明人： Urushiwara, Noriyoshi ,  Sugiura, Noboru ,  Kobayashi, Ryoichi

IPC分类号： H05K5/06 ,  H05K5/00

CPC分类号： H05K5/062 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2924/16315 ,  H05K5/0052 ,  H05K5/064 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP0280905A3

公开(公告)日：1989-09-20

申请号：EP88101609.1

申请日：1988-02-04

申请人： HITACHI, LTD.

发明人： Kobori, Shigeyuki ,  Yamada, Kazuji ,  Kobayashi, Ryoichi ,  Miyazaki, Atsushi ,  Suzuki, Seikou

IPC分类号： G01L9/06 ,  H01L29/84 ,  H01L27/20

CPC分类号： H01L27/20 ,  G01L9/0042 ,  H01L29/84 ,  Y10T29/49103

摘要： A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed threbetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.

公开(公告)号：EP0127176A3

公开(公告)日：1986-02-19

申请号：EP84106127

申请日：1984-05-29

申请人： HITACHI, LTD.

发明人： Yamada, Kazuji ,  Kobori, Shigeyuki ,  Shimada, Satoshi ,  Kanzawa, Ryosaku ,  Kobayashi, Ryoichi ,  Sato, Hideo

IPC分类号： G01L09/06

CPC分类号： H01L29/84 ,  G01L9/0054

摘要： In an integrated pressure sensor, a silicon chip (10) for pressure detection and a substrate (22) for supporting the silicon chip are made of the same material, the silicon chip (10) has a thin diaphragm portion (14) and a peripheral fixed portion (12) thicker than the diaphragm portion (14), and the silicon chip (10) is bonded to the substrate (22) through a thin insulating film (20).

公开(公告)号：EP0505189A2

公开(公告)日：1992-09-23

申请号：EP92302388.1

申请日：1992-03-19

申请人： HITACHI, LTD.

发明人： Kobayashi, Ryoichi ,  Sugiura, Noboru

IPC分类号： H03K5/01

CPC分类号： H03K5/1254

摘要： A switching state detecting apparatus capable of preventing output voltage hunting caused by mechanical switch contacts bouncing when changing state and creating voltage fluctuation (chatter) comprises a passive filter (510) connected to the switches (S1 - Sn) and a comparator (507) for comparing the output value of the RC filter with a threshold level to then output a voltage value. The comparator changes the threshold level when the output voltage of the comparator is inverted, thereby preventing the apparatus from hunting. The output of the comparator is potentially divided and the divided output potential is superposed onto an initial threshold level to provide a second threshold level exceeding the voltage chatter level of said switches.

摘要翻译： 一种切换状态检测装置，其能够防止在变更状态时产生的机械开关触点反弹的输出电压波动，并产生电压波动（抖动），所述开关状态检测装置包括与开关（S1-Sn）连接的无源滤波器（510）和比较器（507） 将RC滤波器的输出值与阈值电平进行比较，然后输出电压值。 当比较器的输出电压反转时，比较器改变阈值电平，从而防止设备的狩猎。 比较器的输出可能被划分，并且分频输出电势叠加到初始阈值电平上以提供超过所述开关的电压抖动电平的第二阈值电平。

公开(公告)号：EP0280905B1

公开(公告)日：1992-06-03

申请号：EP88101609.1

申请日：1988-02-04

申请人： HITACHI, LTD.

发明人： Kobori, Shigeyuki ,  Yamada, Kazuji ,  Kobayashi, Ryoichi ,  Miyazaki, Atsushi ,  Suzuki, Seikou

IPC分类号： G01L9/06 ,  H01L29/84 ,  H01L27/20

CPC分类号： H01L27/20 ,  G01L9/0042 ,  H01L29/84 ,  Y10T29/49103

公开(公告)号：EP0239094A2

公开(公告)日：1987-09-30

申请号：EP87104402.0

申请日：1987-03-25

申请人： HITACHI, LTD.

发明人： Miyazaki, Atsushi ,  Kobayashi, Ryoichi

IPC分类号： G01L9/06 ,  G01L1/22

CPC分类号： G01L19/148 ,  G01L1/2281 ,  G01L9/0054 ,  G01L9/065 ,  G01L19/0038

摘要： A semiconductor strain gauge bridge circuit device is disclosed to include a bridge circuit (2) of semiconductor strain gauges, a first zero-point temperature compensation circuit (3) connected to one (b) of a pair of output terminals of the bridge circuit and including a voltage-dividing resistor circuit (R 21 , R z2 ) generating a voltage substantially equal to a potential appearing at the one output terminal at a predetermined temperature, and a second zero-point temperature compensation circuit (4) connected to the other (d) of the output terminals and including a resistive element (R ZTH ) having a temperature characteristic similar to that of the semiconductor strain gauges.

摘要翻译： 公开了一种半导体应变计桥电路装置，其包括半导体应变计的桥接电路（2），连接到桥接电路的一对输出端的一个（b）的第一零点温度补偿电路（3） 包括分压电阻电路（RZ1，RZ2）和与第一零点温度补偿电路（4）连接的另一个（d）的第二零点温度补偿电路， 的输出端子，并且包括具有与半导体应变计类似的温度特性的电阻元件（RZTH）。