公开(公告)号：EP0843897B1

公开(公告)日：2000-08-30

申请号：EP96917357.4

申请日：1996-06-18

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut ,  PLUNTKE, Christian ,  GOERLACH, Alfred

IPC分类号： H01L27/02 ,  H01L29/41

CPC分类号： H01L29/0852 ,  H01L27/0211 ,  H01L29/402 ,  H01L29/7813

公开(公告)号：EP0561809B1

公开(公告)日：1996-03-13

申请号：EP91919865.5

申请日：1991-11-19

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut ,  FLOHRS, Peter ,  GOERLACH, Alfred

IPC分类号： H01L29/06 ,  H01L27/082

CPC分类号： H01L29/7813 ,  H01L27/0825 ,  H01L29/402

摘要： Proposed is a monolithic integrated semiconductor device with, fitted on the main surface of a monolithic integrated npn or pnp transistor, a cover electrode (D1) for internal voltage limitation which covers a single transition region between a highly doped zone (5) and the lightly doped substrate (1). An adjacent highly doped zone (4) is not covered by the electrode (D1). Connecting the metal cover electrode (D1) to the tap point (12) of a voltage splitter (R1, R2) enables a breakdown voltage to be set which is greater than the sum of the depletion-mode breakdown voltage and the enhancement-mode breakdown voltage.

公开(公告)号：EP0551293B1

公开(公告)日：1995-06-14

申请号：EP91915935.0

申请日：1991-09-21

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut ,  NELLE, Ulrich ,  MINDL, Anton ,  BIRECKOVEN, Bernd

IPC分类号： H03G11/00

CPC分类号： H03G11/002

摘要： The invention concerns a voltage limiter for a transistor circuit including semiconductors (T20 and T21) in an assembly of several successive amplifier stages, the voltage limiter having a reference element (Zener diode Z20) and at least one voltage splitter arrangement (voltage splitter R21/R22). To reduce the tendency towards oscillations, the invention calls for the reference element (Zener diode Z20) to be located after the first-stage control circuit or even closer than this to the output of the voltage-limitation circuit.

公开(公告)号：EP0548092B1

公开(公告)日：1994-07-27

申请号：EP91914516.9

申请日：1991-08-21

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut

IPC分类号： H03K17/615

CPC分类号： H03K17/615 ,  H03K17/18

摘要： The proposal is for a Darlington circuit (10-12) in which a resistor is fitted in parallel to the base-emitter path of the output transistor (12) of said circuit (10-12) to detect a conductor breakage in its load circuit. In addition there are switching means (17) controllable by the dropping voltage at the resistor (16) which, when said voltage falls to below a predetermined value, can shift to a second switching position indicating a conductor breakage. Thus it is possible with certainty to detect a conductor breakage without a measuring resistor in the load circuit and with only a few simple and cheap components.

公开(公告)号：EP0548092A1

公开(公告)日：1993-06-30

申请号：EP91914516.0

申请日：1991-08-21

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut

IPC分类号： H03K17

CPC分类号： H03K17/615 ,  H03K17/18

摘要： On propose un circuit de Darlington (10 - 12), dans lequel une résistance (16) est branchée en parallèle sur la section base-émetteur du transistor de sortie (12) de ce circuit de Darlington (10 - 12) pour détecter une coupure dans le circuit de charge de ce même circuit de Darlington. Il est prévu en outre des dispositifs de commutation (17) commandés par les chutes de tension au niveau de la résistance (16), dispositifs qui, lorsque cette tension devient inférieure à une valeur prédéterminée, peuvent être mis dans un deuxième état de commutation caractérisant une coupure de circuit. On peut ainsi déterminer avec certitutde l'existence d'une coupure de circuit, sans employer de résistance de mesure dans le circuit de charge et au moyen d'un faible nombre de composants simples et peu onéreux.

公开(公告)号：EP0230405B1

公开(公告)日：1989-02-08

申请号：EP85903812.7

申请日：1985-07-31

申请人： ROBERT BOSCH GMBH

发明人： GADEMANN, Lothar ,  HIRT, Adam ,  MICHEL, Hartmut ,  SCHMID, Hans-Dieter ,  SCHNEIDER, Michael

IPC分类号： F02P1/08

CPC分类号： F02P1/083

摘要： The ignition device with magnetic generator (4) internal combustion engines comprises a step adjustment for advancing the ignition when a high number of revolutions is reached. The ignition switch comprises for the low revolution range a first switching branch with a first control element (20) which triggers the ignition by blocking at the time of ignition the switching element (16) in relation to the primary voltage. To modify by step the ignition advance so that the ignition occurs earlier for the high revolution range, there is provided a second switching branch with a second control element (24) which blocks the switching element (16) in relation to the primary voltage at the time of ignition. The second branch includes in series with the switching element (16) a current measuring resistance (18) which is connected in parallel to a voltage divider (26, 27) of which a branch is a resistance (26) of which the value depends upon the number of revolutions and of which the active end (25) is connected to the control input of the second control element (24). The ignition unit is particularly intended to be used in small engines without additional control.

公开(公告)号：EP0080462A1

公开(公告)日：1983-06-08

申请号：EP82900789.0

申请日：1982-03-05

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut ,  GADEMANN, Lothar ,  JESSE, Erich

IPC分类号： H03K17

CPC分类号： H03K17/615 ,  H03K17/04126

摘要： Le circuit a transistors Darlington possede trois etages et comprend un transistor de puissance (T3), un transistor d'attaque (T2) et un transistor d'entree (T1). Les collecteurs de ces trois transistors sont relies entre eux, tandis que l'emetteur du transistor d'attaque (T2) est relie a la base du transistor de puissance (T3) et l'emetteur du transistor d'entree (T1) est relie a la base du transistor d'attaque (T2). La base du transistor d'attaque (T2) est egalement reliee a une borne d'une premiere resistance (R1) dont l'autre borne est connectee a l'anode d'une diode Zener (ZD). Sur la jonction base-emetteur du transistor d'attaque (T2) est montee en parallele une deuxieme resistance (R2). Grace a la presence de la diode Zener (ZD) et des deux resistances (R1, R2), le transistor d'attaque (T2) et le transistor de puissance (T3) deviennent passants lors de l'obtention d'une tension donnee sur la cathode de la diode Zener (ZD), tandis que la variation, en fonction de la temperature, de cette tension d'insertion est determinee par le rapport de ces deux resistances.

公开(公告)号：EP0997001A1

公开(公告)日：2000-05-03

申请号：EP98934760.4

申请日：1998-05-20

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut

IPC分类号： H03K17/0814

CPC分类号： F02P9/002 ,  H01L27/0647 ,  H03K17/08146 ,  H03K17/64

摘要： A circuit arrangement, in particular for triggering an ignition end stage, has a power switching transistor and a switchable free-wheeling circuit or auxiliary channel. The free-wheeling circuit (42) or auxiliary channel are designed as a controllable four-layer element.

公开(公告)号：EP0843897A1

公开(公告)日：1998-05-27

申请号：EP96917357.0

申请日：1996-06-18

申请人： ROBERT BOSCH GMBH

发明人： MICHEL, Hartmut ,  PLUNTKE, Christian ,  GOERLACH, Alfred

IPC分类号： H01L29 ,  H01L21 ,  H01L27

CPC分类号： H01L29/0852 ,  H01L27/0211 ,  H01L29/402 ,  H01L29/7813

摘要： The invention concerns a semi-conductor component in which a zone (3) is produced in a semi-conductor substrate (1, 2) and forms therewith a PN junction. A cover electrode (6) and a highly doped zone (4) are provided in the region of the developing space charge zone. The cover electrode (6) is connected to a voltage divider (Z1, R1, Z2, R2, TR) whereby the potential of the cover electrode (6) is adjusted so as to be temperature-compensated.

公开(公告)号：EP0741881A1

公开(公告)日：1996-11-13

申请号：EP95905052.0

申请日：1995-01-14

申请人： ROBERT BOSCH GMBH

发明人： MINDL, Anton ,  MICHEL, Hartmut ,  BIRECKOVEN, Bernd ,  UEBELE, Manfred ,  NELLE, Ulrich

IPC分类号： H02H7 ,  G05F1 ,  H03F1 ,  H03K17

CPC分类号： H03K17/0826 ,  H03K2017/0806

摘要： Proposed is an integrated circuit with a power transistor (T1, T2, T3), the current flowing through the circuit being measured by the voltage drop across a current-measurement resistor (R5). The voltage drop is used to control a current-control transistor (T5) and a temperature-measurement transistor (T9). Below a given temperature, only the current flowing through the circuit is limited by the current-control transistor (T5). Above this temperature, the collector current is further reduced by transistors T9 and T10 in order to protect the power transistor (T1, T2, T3) from thermal overloading.