公开(公告)号：EP3086357B1

公开(公告)日：2020-02-19

申请号：EP16165942.0

申请日：2016-04-19

申请人： TOKYO ELECTRON LIMITED

发明人： Tahara, Shigeru ,  Nishimura, Eiichi

IPC分类号： H01L21/311 ,  H01J37/32

公开(公告)号：EP2916344A1

公开(公告)日：2015-09-09

申请号：EP15157130.4

申请日：2015-03-02

申请人： TOKYO ELECTRON LIMITED

发明人： Kishi, Hiroki ,  Hashimoto, Mitsuru ,  Shimoda, Keiichi ,  Nishimura, Eiichi ,  Shimizu, Akitaka

IPC分类号： H01J37/32 ,  C23C16/44

CPC分类号： C23C16/4405 ,  C23C16/4401 ,  H01J37/3053 ,  H01J37/32091 ,  H01J37/32862 ,  H01J2237/022

摘要： There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

摘要翻译： 提供了一种清洁方法，用于通过使用在下部结构的下部电极和上部电极之间产生的等离子体，通过蚀刻含有金属的金属层来除去形成在上部电极上的第一沉积物 等离子体处理装置。 该方法包括使离子与上部电极上形成的第一沉积物碰撞的步骤，以及通过所述碰撞产生并形成在下部结构上产生的第二沉积物的步骤。 此外，重复多次重复包括冲突的步骤和去除步骤的循环。

公开(公告)号：EP2819150A3

公开(公告)日：2015-03-18

申请号：EP14185469.5

申请日：2013-04-12

申请人： TOKYO ELECTRON LIMITED

发明人： Tahara, Shigeru ,  Nishimura, Eiichi

IPC分类号： H01L21/306 ,  H01L21/67

CPC分类号： H01L21/0234 ,  H01J37/32449 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/3065 ,  H01L21/67069

摘要： A process of exposing a substrate to oxygen plasma while heating the substrate; and a cycle process, in which the substrate is exposed to an atmosphere of a mixture gas of a hydrogen fluoride gas and an alcohol gas, and a first period during which a total pressure of the mixture gas or a partial pressure of the alcohol gas is set to be a first total pressure or a partial pressure of the alcohol gas and a second period during which the total pressure of the mixture gas or the partial pressure of the alcohol gas is set to be a second total pressure lower than the first total pressure or a partial pressure of the alcohol gas lower than the partial pressure of the alcohol gas are repeated multiple cycles, are performed. In the cycle process, the mixture gas is supplied to the substrate from a region facing the substrate, and a supply amount of the mixture gas per a unit area from a circular first region including a central portion of the substrate is set to be larger than a supply amount of the mixture gas per a unit area from a second region outside the first region.

摘要翻译： 在加热衬底的同时将衬底暴露于氧等离子体的过程; 以及循环处理，其中将基板暴露于氟化氢气体和醇气体的混合气体的气氛中，以及第一时间段，混合气体的总压力或醇气体的分压为 设定为醇气体的第一总压力或分压，以及第二时段，其中混合气体的总压力或醇气体的分压被设定为低于第一总压力的第二总压力 或低于醇气体的分压的醇气体的分压重复多个循环。 在循环处理中，混合气体从面向基板的区域供给到基板，并且从包括基板的中心部分的圆形第一区域的单位面积的混合气体的供给量设定为大于 从第一区域外的第二区域，每单位面积的混合气体的供给量。

公开(公告)号：EP2618366A2

公开(公告)日：2013-07-24

申请号：EP13152161.9

申请日：2013-01-22

申请人： Tokyo Electron Limited

发明人： Nishimura, Eiichi ,  Kotsugi, Tadashi ,  Yamashita, Fumiko

IPC分类号： H01L21/033 ,  H01L21/311

CPC分类号： H01L21/67069 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31138

摘要： An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled includes introducing a gas into a processing chamber; setting a frequency of a high frequency power supply such that a great amount of ion energy is distributed within a range smaller than ion energy for generating an etching yield of the first polymer and equal to or larger than ion energy for generating an etching yield of the second polymer, and supplying the high frequency power into the processing chamber from the high frequency power supply; generating plasma from the gas introduced in the processing chamber by applying the high frequency power; and etching the periodic pattern on a processing target object mounted on a susceptor 16 by using the generated plasma.

摘要翻译： 蚀刻通过自组装能够自组装的嵌段共聚物的第一聚合物和第二聚合物形成的周期性图案的蚀刻方法包括将气体引入处理室; 设定高频电源的频率，使得大量的离子能量分布在小于离子能量的范围内，用于产生第一聚合物的蚀刻产量等于或大于用于产生第一聚合物的蚀刻产量的离子能量 第二聚合物，并从高频电源将高频电力供应到处理室; 通过施加高频功率从引入处理室的气体产生等离子体; 以及通过使用所产生的等离子体在安装在基座16上的处理目标物体上蚀刻周期性图案。

公开(公告)号：EP2469582A3

公开(公告)日：2012-10-17

申请号：EP11010198.7

申请日：2011-12-22

申请人： Tokyo Electron Limited

发明人： Nishimura, Eiichi

IPC分类号： H01L21/3213 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L21/02063 ,  C23F4/00 ,  H01J37/32091 ,  H01L21/02068 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/76805

摘要： There is provided a substrate processing method capable of increasing an etching rate of a copper member without using a halogen gas. A Cu layer 40 having a smoothened surface 50 is obtained, and then, a processing gas produced by adding a methane gas to a hydrogen gas is introduced into an inner space of a processing chamber 15. Plasma is generated from this processing gas. In the inner space of the processing chamber 15, there exist oxygen radicals 52 generated when an oxide layer 42 is etched, and carbon radicals 53 generated from methane. The oxygen radicals 52 and the carbon radicals 53 are compounded to generate an organic acid, and the organic acid makes a reaction with copper atoms of the Cu layer 40. As a result, a complex of the organic acid having the copper atoms is generated, and the generated organic acid complex is vaporized.

摘要翻译： 提供了一种能够在不使用卤素气体的情况下提高铜部件的蚀刻速率的基板处理方法。 获得具有平滑表面50的Cu层40，然后，将通过向氢气添加甲烷气体而产生的处理气体引入到处理室15的内部空间中。由该处理气体产生等离子体。 在处理室15的内部空间中，存在氧化物层42被蚀刻时产生的氧自由基52和由甲烷产生的碳自由基53。 氧自由基52和碳自由基53配合生成有机酸，有机酸与Cu层40的铜原子发生反应。结果，生成具有铜原子的有机酸的络合物， 生成的有机酸络合物蒸发。

公开(公告)号：EP2348524A3

公开(公告)日：2011-11-09

申请号：EP11151363.6

申请日：2011-01-19

申请人： TOKYO ELECTRON LIMITED

发明人： Nishimura, Eiichi ,  Tahara, Shigeru ,  Yamashita, Fumiko

IPC分类号： H01L21/02

CPC分类号： H01L21/02057

摘要： A method for recovering a shape of patterns, formed on a silicon substrate by etching, by removing foreign substances grown between the patterns is provided. The method includes heating the silicon substrate accommodated in a chamber to a temperature of about 160°C or higher.

公开(公告)号：EP1691408A2

公开(公告)日：2006-08-16

申请号：EP06002925.3

申请日：2006-02-14

申请人： TOKYO ELECTRON LIMITED

发明人： Nishimura, Eiichi ,  Iwasaki, Kenya

IPC分类号： H01L21/768 ,  H01L21/8232 ,  H01L21/3105

CPC分类号： H01L21/02063 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76814 ,  Y10S438/906

摘要： A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

摘要翻译： 一种能够容易地控制表面损伤层去除量的基板的处理方法，能够防止布线可靠性的降低。 在基板上的含碳低介电常数绝缘膜的碳浓度降低的表面损伤层在预定压力下暴露于含有氨和氟化氢的混合气体的气氛中。 已经暴露于混合气体的气氛的表面损伤层被加热到预定温度。