利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

50 条记录 (耗时 0.015 秒)

    A method of performing resist process calibration and optimisation, and a method of performing optimisation of the diffractive optical element (DOE) for providing optical proximity effect (OPE) matching between different lithography systems
    31.
    发明公开
    A method of performing resist process calibration and optimisation, and a method of performing optimisation of the diffractive optical element (DOE) for providing optical proximity effect (OPE) matching between different lithography systems 有权
    用于光致抗蚀剂过程的校准和优化和方法，用于衍射光学元件（DOE）的用于匹配不同的光刻系统之间的光学邻近效应（OPE）的优化方法

    公开(公告)号：EP1630617A3

    公开(公告)日：2007-09-05

    申请号：EP05255216.3

    申请日：2005-08-25

    申请人： ASML MaskTools B.V.

    发明人： Park, Sangbong ,  Chen, Jang Fung ,  Liebchen, Armin

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70458 ,  G03F7/70108 ,  G03F7/705 ,  G03F7/70525

    摘要： A method of optimising a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimising performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimising the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimises the imaging of the target pattern.

    Lithographic apparatus and method for calibrating the same
    32.
    发明公开
    Lithographic apparatus and method for calibrating the same 有权
    相同的光刻设备和方法，用于校准

    公开(公告)号：EP1621933A3

    公开(公告)日：2006-06-28

    申请号：EP05076665.8

    申请日：2005-07-19

    申请人： ASML Netherlands BV

    发明人： Loopstra, Erik Roelof ,  Oesterholt, Rene ,  Levasier, Leon Martin

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70775 ,  G03F7/70458 ,  G03F7/70516 ,  G03F9/7011 ,  G03F9/7019

    摘要： Lithographic apparatus includes a substrate table and a motion control system for controlling a movement of the substrate table. The motion control system includes at least 3 position detectors constructed for detecting a position of the substrate table. For measuring a position and orientation of the substrate table, each position detector comprises an optical encoder of a single dimensional or multi dimensional type, the optical encoders being arranged for providing together at least 6 position values, at least one position value being provided for each of the 3 dimensions. 3 or more of the at least 3 optical encoders being connected to the substrate table at different locations in the 3 dimensional coordinate system. The motion control system is arranged to calculate the position of the substrate table in the 3 dimensional coordinate system from a subset of at least 3 of the 6 position values and to calculate an orientation of the substrate table with respect to the coordinate system from another subset of at least 3 of the 6 position values. Further, a method for calibrating the position detectors is described.

    A method of performing resist process calibration and optimisation, and a method of performing optimisation of the diffractive optical element (DOE) for providing optical proximity effect (OPE) matching between different lithography systems
    33.
    发明公开
    A method of performing resist process calibration and optimisation, and a method of performing optimisation of the diffractive optical element (DOE) for providing optical proximity effect (OPE) matching between different lithography systems 有权
    对于衍射光学元件（DOE）的优化方法用于匹配不同的光刻系统之间的光学邻近效应（OPE）

    公开(公告)号：EP1630617A2

    公开(公告)日：2006-03-01

    申请号：EP05255216.3

    申请日：2005-08-25

    申请人： ASML MaskTools B.V.

    发明人： Park, Sangbong ,  Chen, Jang Fung ,  Liebchen, Armin

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70458 ,  G03F7/70108 ,  G03F7/705 ,  G03F7/70525

    摘要： A method of optimising a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimising performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimising the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimises the imaging of the target pattern.

    摘要翻译： 优化使用的过程与光刻系统中的多个方法。 该方法包括的步骤：（a）确定的采矿校准的抗蚀剂对于给定的工艺和目标图案利用第一光刻系统模型; （B）选择的第二光刻系统被利用于图像目标图案利用给定的过程中，能够与衍射光学元件中的多个之一，每一个都具有相应的可变的衍射光学元件的所述多个被配置的第二光刻系统 用于优化给定的衍射光学元件的性能参数; （c）选择衍射光学元件的多个一和模拟第二光刻系统利用衍射光学元件的所述多个所选择的一个的成像性能，所述校准的抗蚀剂模型和所述目标图案; 和（d）通过执行遗传算法识别的衍射光学元件那样的多个所选择的一个的参数值的优化衍射光学元件的所述多个所选择的一个的成像性能优化所述目标图案的成像 ，

    Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device
    34.
    发明公开
    Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device 有权
    横向电场的液晶显示器，用于扫描曝光它们的制备方法和装置

    公开(公告)号：EP1378788A2

    公开(公告)日：2004-01-07

    申请号：EP03014265.7

    申请日：2003-06-25

    申请人： Obayashiseikou Co., Ltd.

    发明人： Hirota, Naoto

    IPC分类号： G02F1/1362 ,  G02F1/1368 ,  G02F1/1343 ,  G03F1/00

    CPC分类号： G03F7/7045 ,  G02F1/134363 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136236 ,  G03B27/10 ,  G03F1/144 ,  G03F1/50 ,  G03F7/70358 ,  G03F7/70458

    摘要： A process of manufacturing a liquid crystal display device of transverse electric-field type, wherein a halftone photomask (60) which is used to form a photoresist pattern has a fully light-shielding area (62) preventing UV irradiation of a portion of an active matrix substrate in which a thin-film transistor element (58) is to be formed, so that the photoresist- pattern includes a positive resist portion (6) which has a first thickness and which covers the above-indicated portion of the substrate. The halftone mask (60) further has a fully light-transmitting area (65) which permits fully UV transmission therethrough to provide the photoresist pattern with a resist-free area (8) which covers to a portion of the substrate in which a contact hole (59) serving as a third connection portion connecting an external scanning-line driver circuit and a scanning-line terminal portion (19) through a junction electrode (21) is to be formed. The photoresist pattern also has a positive resist portion (7) which covers the other portion of the substrate and which has a second thickness smaller than the first thickness. Also disclosed in a scan-exposing device (100, 110, 120, 130) used in the process.

    摘要翻译： 制造横向电场型的液晶显示装置，worin其用于形成光刻胶图案的半色调光掩模（60）的所有的方法，具有防止活性的一部分的紫外线照射完全光屏蔽区域（62） 基质底物，其中A的薄膜晶体管元件（58）要被形成的，所以没有光致抗蚀剂图案包括正型抗蚀剂的部分（6），其具有第一厚度和覆盖所述基材的上面指出的部分。 半色调掩模（60）还具有一个完全光透射区域（65），其允许充分UV透射那里通过以提供与覆盖于基板的一部分的无抗蚀剂区域（8）的光致抗蚀剂图案，其中的接触孔 （59），作为连接到外部扫描线驱动电路，并通过接线电极（21）的扫描线终端部分（19）的第三连接部分被形成。 光致抗蚀剂图案从而具有正型抗蚀剂的部分（7），其覆盖衬底的其它部分和具有第二厚度比第一厚度小。 所以盘在该方法中使用的扫描曝光装置（100，110，120，130）游离缺失。

    Method for determining the parameters of an ic manufacturing process by a differential procedure
    35.
    发明公开
    Method for determining the parameters of an ic manufacturing process by a differential procedure 审中-公开
    一种用于通过微分法确定的IC制造工艺的参数的方法

    公开(公告)号：EP2952964A1

    公开(公告)日：2015-12-09

    申请号：EP14305835.2

    申请日：2014-06-03

    申请人： Aselta Nanographics

    发明人： Saib, Mohamed ,  Schiavone, Patrick ,  Figueiro, Thiago

    IPC分类号： G03F7/20

    CPC分类号： G03F7/705 ,  G03F7/70458 ,  G03F7/70516 ,  G06F17/5072 ,  G06F2217/06 ,  G06F2217/12

    摘要： The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function.

    摘要翻译： 本发明盘松的方法容易地确定矿的第二工艺参数，用于从第一工艺的参数制造。 度量代表的两个过程之间的差异从多个参数的值的，可以测量这两个过程在校准布局计算，或可以是确定性从预先存在的值开采布局或基准数据的 两个过程通过内插/外插步骤。 度量的数量被选择以便做他们的组合给出了在一个设计的所有区域的两个过程之间的差异精确表示。 有利的是，所述度量计算为目标设计的卷积的产物和核函数的化合物和变形函数。

    Method of and program for determining an exposure parameter, exposure method, and device manufacturing method
    39.
    发明公开
    Method of and program for determining an exposure parameter, exposure method, and device manufacturing method 审中-公开
    用于确定曝光，曝光方法和制造过程的装置参数的方法和程序

    公开(公告)号：EP2133745A1

    公开(公告)日：2009-12-16

    申请号：EP09007004.6

    申请日：2009-05-26

    申请人： Canon Kabushiki Kaisha

    发明人： Tsujita, Kouichirou ,  Mikami, Koji

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70991 ,  G03F7/70083 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70525

    摘要： A method of determining a value of an exposure parameter when plural types of patterns are transferred onto a substrate (29) comprises calculating an optical image, formed on an image plane upon illuminating a pattern (26) on an object plane, for each of combinations of plural values of an exposure parameter and plural values of at least one of an exposure amount and a defocus amount, calculating, for each of the plural values of the exposure parameter, a deviation between a contour of a target optical image and a calculated contour of the optical image, in each of the plural types of patterns, and determining a value of the exposure parameter, at which a maximum value of the deviations among the plural types of patterns is minimum, as a value of the exposure parameter when exposing the substrate (29).

    摘要翻译： 确定性采矿的方法的曝光参数当多种类型的图案到基片转印（29）的值包括：计算光学图像的，在照明平面上的图案（26）形成在图像平面为对象，对于每个组合的 的曝光参数的多个值和曝光量和散焦量中的至少一个的多个值，在计算中，对于每个曝光参数的多个值，目标光学图像的轮廓和计算轮廓之间的偏差的 在每个所述多个类型的图案的光学图像，并且确定性采矿曝光参数的值，在该偏差的多种类型的图案中的最大值为最小值，作为曝光参数的值。当暴露的 基板（29）。

    A method of performing model-based scanner tuning, a computer program and a lithographic apparatus
    40.
    发明公开
    A method of performing model-based scanner tuning, a computer program and a lithographic apparatus 有权
    一种执行基于模型的扫描仪调谐的方法，计算机程序和光刻设备

    公开(公告)号：EP2028546A2

    公开(公告)日：2009-02-25

    申请号：EP08252671.6

    申请日：2008-08-12

    申请人： Brion Technologies, Inc.

    发明人： Ye, Jun ,  Cao, Yu

    IPC分类号： G03F7/20

    CPC分类号： G03F7/705 ,  G03F7/70125 ,  G03F7/70458 ,  G03F7/70516 ,  G03F7/70525

    摘要： A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

    摘要翻译： 一种基于模型的调谐方法，用于利用参考光刻系统来调谐第一光刻系统，其中每一个具有用于控制成像性能的可调参数。 该方法包括定义测试图案和成像模型的步骤; 使用参考光刻系统对测试图案成像并测量成像结果; 利用第一光刻系统对测试图案进行成像并测量成像结果; 利用对应于参考光刻系统的成像结果校准成像模型，其中校准的成像模型具有第一组参数值; 利用对应于第一光刻系统的成像结果来调整经校准的成像模型，其中经调谐的校准模型具有第二组参数值; 以及基于第一组参数值与第二组参数值之间的差异来调整第一光刻系统的参数。