公开(公告)号：EP1738414A2

公开(公告)日：2007-01-03

申请号：EP05733049.0

申请日：2005-04-05

Applicant: Cambridge University Technical Services Limited

Inventor： CHUA, Lay-Lay ,  HO, Peter, Kian, Hoon ,  FRIEND, Richard, Henry

IPC: H01L29/00

CPC classification number: H01L51/0508 ,  H01L27/283 ,  H01L51/0512 ,  H01L51/0554

Abstract: A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.

公开(公告)号：EP1668716A2

公开(公告)日：2006-06-14

申请号：EP04782136.8

申请日：2004-08-24

Applicant: The Regents of the University of California

Inventor： YANG, Yang ,  MA, Liping

IPC: H01L51/00 ,  H01L29/772

CPC classification number: H01L51/057 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0046 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0512 ,  H01L51/055

Abstract: A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a gate electrode and the common source electrode. The common source electrode allows control of electrical current between the source and drain electrodes by controlling the electrical potential that is applied to the gate electrode.

公开(公告)号：EP1575932A2

公开(公告)日：2005-09-21

申请号：EP03766287.1

申请日：2003-07-24

Applicant: Infineon Technologies AG

Inventor： HALIK, Marcus ,  KLAUK, Hagen ,  SCHMID, Günter

IPC: C07D333/00

CPC classification number: H01L51/0068 ,  C07D333/18 ,  C07D409/14 ,  H01L51/0067 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545

Abstract: The invention relates to novel octupolar compounds and the production and use thereof as organic semi-condutors, particularly for organic field effect transistors.

公开(公告)号：EP1563554A2

公开(公告)日：2005-08-17

申请号：EP03785509.5

申请日：2003-11-13

Applicant: Polylc GmbH & Co. KG

Inventor： FIX, Walter ,  ROST, Henning

IPC: H01L51/20 ,  H01L51/40

CPC classification number: H01L51/0015 ,  H01L51/0019 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0512

Abstract: The invention relates to an organic electronic component such as an organic field effect transistor (OFET), in which a single organic material is used for at least two functional layers, for example as a conductive and semiconductive material. The invention also relates to an efficient method for producing two functional layers, for example source and drain electrodes, in addition to the semiconductive layer, in one process step, for use in organic field effect transistors. The conductive or semiconductive regions in the semiconductive or conductive matrix are obtained for example by doping, e.g. by a partially controlled redox reaction.

公开(公告)号：EP1556908A2

公开(公告)日：2005-07-27

申请号：EP03776825.6

申请日：2003-10-30

Applicant: Infineon Technologies AG

Inventor： GRAHAM, Andrew ,  HOFMANN, Franz ,  HÖNLEIN, Wolfgang ,  KRETZ, Johannes ,  KREUPL, Franz ,  LANDGRAF, Erhard ,  LUYKEN, Richard, Johannes ,  RÖSNER, Wolfgang ,  SCHULZ, Thomas ,  SPECHT, Michael

IPC: H01L51/20

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C2213/17 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0512

Abstract: The invention relates to a field effect transistor assembly and an integrated circuit array. The field effect transistor assembly contains a substrate, a first wiring plane with a first source/drain region on the substrate and a second wiring plane with a second source/drain region above the first wiring plane. The field effect transistor assembly also comprises at least one vertical nanoelement as a channel region, which is situated between and coupled to both wiring planes. The nanoelement is at least partially surrounded by electrically conductive material, forming a gate region, whereby electrically insulating material is provided between the nanoelement and the electrically conductive material to act as a gate insulating layer.

公开(公告)号：EP1359122A3

公开(公告)日：2005-06-22

申请号：EP03252763.2

申请日：2003-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choi, Won-bong ,  Lee, Young-hee

IPC: C01B31/02

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/168 ,  C01B32/174 ,  C01B2202/22 ,  H01L51/0048 ,  H01L51/0512

Abstract: Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same are provided. The functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method involves heating carbon nanotubes in a vacuum; dissociating hydrogen molecules in hydrogen gas into hydrogen atoms; and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes can be applied in, for example, electronic devices, optoelectronic devices, energy storage devices, and the like.

公开(公告)号：EP1070276B1

公开(公告)日：2005-06-01

申请号：EP99916582.2

申请日：1999-04-09

Applicant: E-Ink Corporation

Inventor： DRZAIC, Paul ,  WILCOX, Russell, J.

IPC: G02F1/167

CPC classification number: G09G3/344 ,  B41J3/4076 ,  G02B26/026 ,  G02F1/133305 ,  G02F1/1334 ,  G02F1/167 ,  G02F2202/28 ,  G09F9/302 ,  G09F9/372 ,  G09G3/2074 ,  H01L51/005 ,  H01L51/0077 ,  H01L51/0512

Abstract: A full color, reflective display having superior saturation and brightness is achieved with a novel display element comprising multichromatic elements. In one embodiment a capsule includes more than these species of particles which differ visually. One embodiment of the display employs three sub-pixels, each sub-pixel comprising a capsule including three species of particles which differ visually. Another embodiment of the display employs color filters to provide different visual states to the user. The display element presents a visual display in response to the application of an electrical signal to at least one of the capsules.

Abstract translation: 具有优异的饱和度和亮度的全彩色反射式显示器通过包含多色元件的新型显示元件来实现。 在一个实施例中，胶囊包括多于这些视觉上不同的粒子种类。 显示器的一个实施例采用三个子像素，每个子像素包括包含三种视觉上不同的粒子的胶囊。 显示器的另一个实施例采用彩色滤光片向用户提供不同的视觉状态。 显示元件响应于将电信号施加到至少一个胶囊而呈现视觉显示。

公开(公告)号：EP1420414B1

公开(公告)日：2005-04-06

申请号：EP03257104.4

申请日：2003-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choi, Won-bong ,  Lee, Jo-won ,  Kang, Ho-kyu, 503-1002 Jinsan Maeul ,  Kim, Chung-woo, 101-705 Park Town Daelim Apt.

IPC: G11C13/02 ,  H01L51/30 ,  G11C16/04

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C16/0466 ,  G11C2213/16 ,  G11C2213/17 ,  H01L29/02 ,  H01L29/792 ,  H01L29/7923 ,  H01L29/7926 ,  H01L51/0048 ,  H01L51/0512 ,  Y10S977/943

公开(公告)号：EP1472744A1

公开(公告)日：2004-11-03

申请号：EP02794299.4

申请日：2002-12-18

Applicant: MOTOROLA INC., A Corporation of the state of Delaware

Inventor： SCHEIFERS, Steven, M. ,  GAMOTA, Daniel, R. ,  BRAZIS, Paul, W., Jr. ,  ZHANG, Jie ,  LACH, Lawrence, E.

IPC: H01L35/24

CPC classification number: H01L51/0545 ,  H01L21/31683 ,  H01L51/0021 ,  H01L51/0512

Abstract: A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

公开(公告)号：EP1434282A2

公开(公告)日：2004-06-30

申请号：EP03028942.5

申请日：2003-12-17

Applicant: KONICA MINOLTA HOLDINGS, INC.

Inventor： Hirai, Katsura

IPC: H01L51/20

CPC classification number: H01L51/0541 ,  G02F1/1368 ,  G02F2202/02 ,  H01L27/28 ,  H01L27/283 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/0529 ,  H01L51/0533 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/102 ,  H01L51/107

Abstract: An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.

Abstract translation: 公开了一种通过该方法制造的有机薄膜晶体管制造方法和有机薄膜晶体管，该方法包括以下步骤：a）在衬底上形成栅电极，b）在衬底上形成栅极绝缘层，c ）在所述衬底上形成有机半导体层，d）在所述有机半导体层上形成有机半导体层保护层，e）去除所述有机半导体层保护层的一部分，以及f）形成源电极和漏电极 去除了有机半导体层保护层的部分，使得源电极和漏电极接触有机半导体层。