公开(公告)号：EP3413354A1

公开(公告)日：2018-12-12

申请号：EP16863200.8

申请日：2016-06-16

申请人： BOE Technology Group Co., Ltd.

发明人： TIAN, Xueyan

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L51/0545 ,  G01L1/16 ,  H01L51/0021 ,  H01L51/0097 ,  H01L51/0554 ,  H01L51/10 ,  H01L51/107 ,  Y02E10/549

摘要： Provided are a thin film transistor sensor and a manufacturing method thereof. The thin film transistor sensor includes a first substrate (10) and a second substrate (20) opposite to each other, the first substrate (10) includes a first flexible base substrate (101) and a first gate electrode (102) disposed on the first flexible base substrate, and the second substrate (20) includes a second flexible base substrate (201) and a second gate electrode (202) disposed on the second flexible base substrate; the flexible base substrate (101) is further provided with an active layer (103), a source electrode (104) and a drain electrode (105), the second gate electrode (202) is at least partially overlapped with and separated from the first gate electrode (102), and configured to be electrically connected to the first gate electrode (102) after the thin film transistor sensor is applied with a voltage, such that the thin film transistor sensor is turned on. The thin film transistor sensor realizes an ON/OFF function of the thin film transistor by using a spatial point contact change of the first gate electrode and the second gate electrode of the flexible thin film transistor, so as to realize actions of the sensor.

公开(公告)号：EP1900032B1

公开(公告)日：2012-06-06

申请号：EP06765915.1

申请日：2006-06-27

申请人： Creator Technology B.V.

发明人： HUITEMA, Hjalmar Edzer Ayco ,  GELINCK, Gerwin Hermanus

IPC分类号： H01L27/32

CPC分类号： G02F1/136213 ,  G02F1/167 ,  G02F2001/136218 ,  H01L27/12 ,  H01L27/3272 ,  H01L51/0512 ,  H01L51/0554

摘要： A pixel cell (100) and method for making the same for an active matrix display includes a pixel pad (110) and a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad. A field shield (112) is formed on an insulating layer (102) and connected to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the pixel pad. The field shield may extend over the thin film transistor and form a second gate (215) used to enhance the performance of the thin film transistor and the pixel cell.

公开(公告)号：EP1974390A1

公开(公告)日：2008-10-01

申请号：EP06843761.5

申请日：2006-12-27

申请人： Ricoh Company, Ltd.

发明人： KONDO, Hiroshi

IPC分类号： H01L29/786 ,  H01L21/288 ,  H01L21/336 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0554 ,  H01L27/283 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0003 ,  H01L51/0023 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/105

摘要： A disclosed electronic element includes: a substrate; a first electrode layer formed on a portion of the substrate; an insulating layer formed on the first electrode layer; a conductive layer formed on the insulating layer formed on an area where the first electrode layer is formed; a second electrode layer formed on one area where the first electrode layer on the substrate is not formed; a third electrode layer formed on the other area where neither the first electrode layer on the substrate nor the second electrode layer is formed; and a semiconductor layer formed so as to cover between the conductive layer and the second electrode layer and to cover between the conductive layer and the third electrode layer.

公开(公告)号：EP1946390A1

公开(公告)日：2008-07-23

申请号：EP06826006.6

申请日：2006-10-16

申请人： Motorola, Inc.

发明人： ZHANG, Jie ,  ADEWOLE, Hakeem, B. ,  BRAZIS, Paul, W. ,  COLLINS, Timothy, J. ,  GAMOTA, Daniel, R. ,  SZCZECH, John, B. ,  WIELGUS, Jerzy

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L49/02 ,  H01L21/336

CPC分类号： H01L51/0554 ,  H01L27/1292 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0004 ,  H01L51/0022

摘要： A printed transistor has a first gate (202) printed and disposed on a first side of a printed deposit of semiconductor material (201) and a second printed gate (301) disposed on an opposite side of the printed deposit of semiconductor material. By one approach these elements are provided using a serial printing process. By another approach these elements are provided through use of a lamination process.

公开(公告)号：EP3403287A1

公开(公告)日：2018-11-21

申请号：EP17703524.3

申请日：2017-01-13

申请人： Corning Incorporated

发明人： ENICKS, Darwin Gene ,  HE, Mingqian ,  MANLEY, Robert George

IPC分类号： H01L51/05

CPC分类号： H01L51/052 ,  H01L29/1606 ,  H01L29/4908 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0047 ,  H01L51/0554 ,  H01L51/0558 ,  H03K17/04106

摘要： An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.

公开(公告)号：EP1715530B1

公开(公告)日：2012-04-25

申请号：EP05710136.2

申请日：2005-02-10

申请人： Sony Corporation ,  Sony Deutschland GmbH

发明人： MATSUI, Eriko, Sony Corporation ,  WATANABE, Haruo, Sony Corporation ,  HARNACK, Oliver ,  MATSUZAWA, Nobuyuki ,  YASUDA, Akio ,  MIZUTANI, Tadashi ,  YAMAUCHI, Takae ,  KITAGAWA, Susumu

IPC分类号： B82Y10/00 ,  G02F1/061 ,  G11C13/00 ,  H01L51/00 ,  H01L51/05 ,  H01L51/42

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  G02F1/061 ,  G02F1/167 ,  G11C11/5664 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/14 ,  G11C2213/77 ,  H01L51/0076 ,  H01L51/0077 ,  H01L51/0508 ,  H01L51/0554 ,  H01L51/0591 ,  H01L51/428 ,  Y02E10/549

摘要： A functional molecular element wherein the conformation of an organometallic complex molecule (1) forming a structure having a columnar alignment and having a form near to a disk is changed by the application of an electric field, to thereby express a function, more specifically, the structure of the organometallic complex molecule is changed by the application of an electric field, which induces the change of the anisotropy of the dielectric constant of the molecule. Accordingly, the above functional molecular element can switch the electroconductivity between the electrodes to be measured, with three or more stable values, and thus can form a practical element utilizing its property of memorizing multi values.

公开(公告)号：EP2383273A1

公开(公告)日：2011-11-02

申请号：EP10733567.1

申请日：2010-01-22

申请人： Sumitomo Chemical Company, Limited ,  Keio University

发明人： KAKIUCHI Fumitoshi ,  TERAI Hiroki

IPC分类号： C07F7/08 ,  H01L21/336 ,  H01L29/786 ,  H01L29/80 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

CPC分类号： C07F7/1836 ,  C07F7/0809 ,  C07F7/0812 ,  C07F7/0818 ,  C07F7/1844 ,  H01L51/0055 ,  H01L51/0056 ,  H01L51/0057 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0554 ,  H01L51/0558 ,  H01L51/057 ,  H01L51/102

摘要： An aromatic compound represented by the following formula (1).

[In the formula, ring A and ring B each represent a benzene ring, an aromatic fused ring composed of 2-4 rings, a heteroaromatic ring or a heterocyclic aromatic fused ring composed of 2-4 rings, R 1a represents a group -CHR 2a -CHR 2b R 2c , and R 1b , R 1c and R 1d each represent hydrogen, aryl or a group -CHR 2d -CHR 2e R 2f . This is with the proviso that at least 2 of R 1b , R 1c and R 1d are not hydrogen. R 2a , R 2b and R 2c each represent hydrogen, alkyl, aryl or a substituted silyl group, and R 2a and R 2b may be bonded together to form a ring. R 2d , R 2e and R 2f each represent hydrogen, alkyl, aryl or a substituted silyl group, and R 2d and R 2e may be bonded together to form a ring.]

摘要翻译： 由下式（1）表示的芳族化合物。 [式中，环A和环B各自表示苯环，由2-4个环构成的芳香稠环，由2-4个环构成的杂芳环或杂环芳香稠环，R 1a表示-CHR 2a -CHR 2b R 2c，R 1b，R 1c和R 1d各自表示氢，芳基或基团-CHR 2d -CHR 2e R 2f。 这是条件是R 1b，R 1c和R 1d的至少2个不是氢。 R 2a，R 2b和R 2c各自表示氢，烷基，芳基或取代甲硅烷基，R 2a和R 2b可以键合在一起形成环。 R 2d，R 2e和R 2f各自表示氢，烷基，芳基或取代甲硅烷基，R 2d和R 2e可以键合在一起形成环。

公开(公告)号：EP1715530A1

公开(公告)日：2006-10-25

申请号：EP05710136.2

申请日：2005-02-10

申请人： SONY CORPORATION ,  Sony Deutschland GmbH

发明人： MATSUI, Eriko, SONY CORPORATION ,  WATANABE, Haruo, SONY CORPORATION ,  HARNACK, Oliver ,  MATSUZAWA, Nobuyuki ,  YASUDA, Akio ,  MIZUTANI, Tadashi ,  YAMAUCHI, Takae ,  KITAGAWA, Susumu

IPC分类号： H01L51/00 ,  B82B1/00 ,  G02F1/137 ,  H01L27/10 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  G02F1/061 ,  G02F1/167 ,  G11C11/5664 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/14 ,  G11C2213/77 ,  H01L51/0076 ,  H01L51/0077 ,  H01L51/0508 ,  H01L51/0554 ,  H01L51/0591 ,  H01L51/428 ,  Y02E10/549

摘要： The present invention is directed to a functional molecular element adapted to change, by application of electric field, conformation of a disc shape like organic metallic complex molecule (1) which forms a columnar arrangement structure to exhibit function, wherein the structure of the organic metallic complex molecule is changed by application of electric field so that anisotropy of dielectric constant is changed. Accordingly, conductivity between measurement electrodes can be switched. As its stable value, there are three kinds of stable values or more. Thus, elements or devices to which such multi-value memory characteristic is applied can be constituted.

摘要翻译： 本发明涉及一种功能分子元件，其适用于通过施加电场来改变像圆形形状的有机金属络合物分子（1）的构象，其形成柱状排列结构以发挥功能，其中有机金属的结构 通过施加电场来改变复合分子，从而改变介电常数的各向异性。 因此，可以切换测量电极之间的电导率。 作为其稳定值，有三种稳定值或更多。 因此，可以构成应用这种多值存储特性的元件或装置。

公开(公告)号：EP0460242B1

公开(公告)日：1996-04-17

申请号：EP91901561.0

申请日：1990-12-27

申请人： NIPPON PETROCHEMICALS CO., LTD.

发明人： YAMAMOTO, Hiromichi ,  KUMEHARA, Hideo ,  NISHIBE, Takashi

IPC分类号： H01L51/20 ,  H01L29/772

CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L51/0006 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/004 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0554 ,  H01L51/0566

摘要： An electric element comprising a π-conjugated system macromolecule having a property that its conductivity is varied by the excitation due to the polarization of a dielectric and a ferroelectric provided near the macromolecule. The electric element has a function of controlling the conductivity of the π-conjugated system macromolecule by applying an electric field to the ferroelectric substance. The electric element is used as a relay element, storage element, switching element or the like.

公开(公告)号：EP2731154A2

公开(公告)日：2014-05-14

申请号：EP13192088.6

申请日：2013-11-08

申请人： Palo Alto Research Center Incorporated

发明人： NG, Tse Nga ,  Schwartz, David Eric ,  Veres, Janos

IPC分类号： H01L51/05 ,  H01L27/12

CPC分类号： H01L51/0554 ,  H01L29/78645

摘要： Multiple thin film transistors are aligned in serial and parallel orientation. A second source region is disposed between a first source region and a first drain region. A second drain region is disposed between the first source region and the first drain region. The second drain region and the second source region substantially coincide. A first gate is disposed between the first source region and the coinciding second source and second drain regions. A second gate region is disposed between the first drain region and the coinciding second source and second drain regions. An semiconductor is disposed between the first source region, the first drain region, and the coinciding second source and second drain regions. A dielectric material is disposed between the semiconductor substrate and the first and second gates.

摘要翻译： 多个薄膜晶体管以串联和平行取向对齐。 第二源极区域设置在第一源极区域和第一漏极区域之间。 第二漏极区域设置在第一源极区域和第一漏极区域之间。 第二漏极区域和第二源极区域基本上重合。 第一栅极设置在第一源极区域和重合的第二源极和第二漏极区域之间。 第二栅极区域设置在第一漏极区域和重合的第二源极和第二漏极区域之间。 半导体设置在第一源极区域，第一漏极区域和重合的第二源极和第二漏极区域之间。 介电材料设置在半导体衬底与第一和第二栅极之间。