摘要:
The present invention provides a control system for a modular high repetition rate two discharge chamber ultra violet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Novel control features specially adapted for a two-chamber gas discharge laser system include: (1) pulse energy controls, with nanosecond timing precision (2) precision pulse to pulse wavelength controls with high speed and extreme speed wavelength tuning (3) fast response gas temperature control and (4) F2 injection controls with novel learning algorithm.
摘要:
The claimed invention is a tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life releasable lithography lasers with special F2 line narrowing and tuning techniques. This techniques are applied to a seed beam which is operated in a first gain medium. This seed beam is then used to stimulate narrow band lasing in a second gain medium. The resulting very narrow band laser beam is useful for integrated circuit lithography. One preferred embodiment of the invention comprises a laser chamber (211), a gas module (202), a control module (205), a line narrowing module (206), and a pulse power supply module (208).
摘要:
An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4,000 Hz or greater by cleaning debris from the discharge region in less time that the approximately 0.25 milliseconds between pulses. The masters oscillation is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
摘要:
The present invention provides a narrow band laser system having two laser subsystems. The first laser subsystem (seed laser) provides a very narrow band pulsed output beam which is used to injection seed the second laser subsystem (slave osc. or power amp.) where the narrow band pulsed seed beam is amplified to produce a narrow band pulsed output beam. A pulse power supply (pulse power) precisely times the discharges in the two laser subsystems so that the discharges are properly synchronized. The laser gas comprises F2 at a partial pressure less than about 1 % with a buffer gas comprised of helium, neon, or a combination thereof. Control of the center wavelength of the output beam is provided by adjusting one or more of the following parameters in the first laser subsystem: the total laser gas pressure, the relative concentration of helium or neon, F2 partial pressure, laser gas temperature, discharge voltage and pulse energy.
摘要:
A narrow band F2 laser system having two laser subsystems. The first laser subsystem is a seed laser (100) and provides a very narrow band pulsed beam at a first narrow wavelength range corresponding to a first natural emission line of the F2 laser system. This beam is injected into the gain medium of the second laser subsystem (102) in a first direction where the beam is amplified to produce a narrow band pulsed output beam. The seed laser (100) also produces a second pulsed beam at a second wavelength range corresponding to a second natural emission line of the F2 laser. This line is injected into the gain medium of the second laser subsystem (102) in a second direction opposite said first direction. The second beam is amplified in the gain medium of the second laser subsystem of the second laser subsystem and depletes the gain medium of gain potential at the second wavelength range. Thus, the portion of light at the second wavelength range in the output beam (124) is greatly reduced.
摘要:
The claimed invention is a tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life releasable lithography lasers with special F2 line narrowing and tuning techniques. This techniques are applied to a seed beam which is operated in a first gain medium. This seed beam is then used to stimulate narrow band lasing in a second gain medium. The resulting very narrow band laser beam is useful for integrated circuit lithography. One preferred embodiment of the invention comprises a laser chamber (211), a gas module (202), a control module (205), a line narrowing module (206), and a pulse power supply module (208).
摘要:
An F2 laser having an etalon-based line narrowing output coupler (164) and a technique for tuning the laser. The etalon based output coupler (165A, 165B) is adjusted to preferentially reflect a percentage (about 17 %) of light at or near the spectral maximum of one of the primary F2 spectral lines and to not reflect light at the other primary F2 spectral line. Thus, a selected range of the selected line is preferentially amplified in the gain medium and the other line is transmitted out of the laser cavity and, therefore, receives no amplification and is suppressed. The result is substantial narrowing in the preferred embodiment of the 157.630 nm line and effective suppression of the 157.523 nm line. Substantial improvement in line narrowing of 157.630 nm line results from a wavelength selective properties of etalon based line-narrowing output coupler.
摘要:
Systems and methods for automatically performing a high accuracy gas refill, in a laser chamber of a two chamber gas discharge laser such as an excimer laser are disclosed. Based, upon a target pressure and halogen concentration that is either predetermined or entered by a user, and with no further user action, a non-halogen containing gas is added to the chamber to a first pressure, followed by the addition of halogen containing gas to a second pressure which is greater than a target pressure for the chamber, such that the halogen content in the gas at the second pressure is at a desired concentration. The gas in the chamber is bled until the pressure drops to the target pressure. The amount of non-halogen containing gas added is estimated automatically, and the amount of halogen containing gas is measured so that the desired concentration is obtained, taking into account both temperature and any gas remaining in the fill pipes from prior laser operation.