公开(公告)号：EP0210616B1

公开(公告)日：1990-10-17

申请号：EP86110329.9

申请日：1986-07-24

申请人： HITACHI, LTD.

发明人： Chinone, Naoki ,  Uomi, Kazuhisa ,  Fukuzawa, Tadashi ,  Matsueda, Hideaki ,  Kajimura, Takashi

IPC分类号： H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2275 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34 ,  H01S5/3407

公开(公告)号：EP2702648B1

公开(公告)日：2018-05-09

申请号：EP12774690.7

申请日：2012-03-16

申请人： The Government of the United States of America as represented by the Secretary of the Navy

发明人： VURGAFTMAN, Igor ,  MEYER, Jerry, R. ,  CANEDY, Chadwick, Lawrence ,  BEWLEY, William, W. ,  KIM, Chul, Soo ,  KIM, Mijin ,  MERRITT, Charles, D.

IPC分类号： H01S5/34 ,  H01S5/30 ,  B82Y20/00

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3422 ,  H01S5/34313

摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.

公开(公告)号：EP3273552A1

公开(公告)日：2018-01-24

申请号：EP15883654.4

申请日：2015-09-17

申请人： Kabushiki Kaisha Toshiba

发明人： YABUHARA, Hidehiko

IPC分类号： H01S5/34 ,  H01S5/343

CPC分类号： H01S5/3407 ,  H01S5/34 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/343 ,  H01S5/34366 ,  H01S2301/17

摘要： An active layer of a quantum cascade laser includes an active layer includes a plurality of emission regions and a plurality of injection regions. Each emission region includes an injection barrier layer, and an light-emitting quantum well layer that has at least two well layers, and that emits infrared light by undergoing an intersubband transition. Each injection region includes an extraction barrier layer, and a relaxation quantum well layer that creates an energy level for relaxing the energy of carriers from the each emission region. One of adjacent two well layers in the light-emitting quantum well layer of the each emission region on the side of the extraction barrier layer is deeper than a second well layer on the side of the injection barrier layer. The each emission region and the injection region are alternately stacked.

摘要翻译： 量子级联激光器的有源层包括有源层，该有源层包括多个发射区域和多个注入区域。 每个发射区域包括注入势垒层和具有至少两个阱层的发光量子阱层，并且通过经历亚带间跃迁发射红外光。 每个注入区域包括提取阻挡层和产生用于放宽来自每个发射区域的载流子的能量的能级的弛豫量子阱层。 提取阻挡层侧的每个发光区域的发光量子阱层中的相邻两个阱层中的一个比注入阻挡层侧上的第二阱层更深。 每个发射区域和注入区域交替堆叠。

公开(公告)号：EP3154140A4

公开(公告)日：2017-06-07

申请号：EP15803180

申请日：2015-05-07

申请人： SHARP KK ,  UNIV TOKYO

发明人： KOTANI TERUHISA ,  ARAKAWA YASUHIKO

IPC分类号： H01S5/343 ,  H01S5/022 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34

CPC分类号： H01S5/3401 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2031 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3402 ,  H01S5/3407 ,  H01S5/34333

摘要： A QCL (10) includes a first electrode (15), a first contact layer (11) that is in contact with the first electrode (15) and is made of a first compound semiconductor, a second electrode (14) having a polarity opposite to that of the first electrode (15), a second contact layer (13) that is in contact with the second electrode (14) and is made of a second compound semiconductor, and an active layer (12) disposed between the first contact layer (11) and the second contact layer (13) and including two or more active layer units. Each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked. The vibrational energies of longitudinal optical phonons of the third compound semiconductor and the fourth compound semiconductor are higher than the vibrational energy of a longitudinal optical phonon of GaAs and lower than or equal to the vibrational energy of a longitudinal optical phonon of AlN.

摘要翻译： QCL（10）包括第一电极（15），与第一电极（15）接触且由第一化合物半导体构成的第一接触层（11），具有极性相反的第二电极（14） 与所述第一电极（15）的第一接触层（12）之间的第二接触层（13），所述第二接触层（13）与所述第二电极（14）接触并且由第二化合物半导体制成;以及有源层（12） （11）和第二接触层（13）并且包括两个或更多个有源层单元。 每个有源层单元包括由第三化合物半导体构成的一个或多个量子阱层和由第四化合物半导体构成的一个或多个阻挡层，并且每个量子阱层和每个阻挡层交替堆叠。 第三化合物半导体和第四化合物半导体的纵向光学声子的振动能量高于GaAs的纵向光学声子的振动能量并且小于或等于AlN的纵向光学声子的振动能量。

公开(公告)号：EP2002518A4

公开(公告)日：2017-03-29

申请号：EP07757323

申请日：2007-02-22

申请人： WISCONSIN ALUMNI RES FOUND

发明人： BOTEZ DAN ,  XU DAPENG P ,  MAWST LUKE J

IPC分类号： H01S5/00 ,  H01S5/34

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  Y10S977/951

摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.

公开(公告)号：EP2772950A1

公开(公告)日：2014-09-03

申请号：EP13198246.4

申请日：2013-12-18

申请人： Kabushiki Kaisha Toshiba

发明人： Nago, Hajime ,  Kimura, Shigeya ,  Harada, Yoshiyuki ,  Nunoue, Shinya

IPC分类号： H01L33/32 ,  H01S5/343

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/14 ,  H01L33/325 ,  H01S5/3211 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/34346

摘要： According to one embodiment, a semiconductor light emitting element (110, 110a-110c, 111, 120) includes an n-type semiconductor layer (10) including a nitride semiconductor, a p-type semiconductor layer (20) and a light emitting layer (30). The p-type semiconductor layer (20) includes a first p-side layer (21) of Al x 1 Ga 1- x 1 N (0 ≤ x1 x 2 Ga 1- x2 N (0 x2 x3 Ga 1- x3 N ( x2 x3 z1 Ga 1- z1 N (0 ≤ z1 ), and a second layer (33b) of Al z2 Ga 1- z2 N ( z1 z2 x2 ).

摘要翻译： 根据一个实施例，半导体发光元件（110,1 110a-110c，111,120）包括包括氮化物半导体的n型半导体层（10），p型半导体层（20）和发光层 （30）。 p型半导体层（20）包括包含Mg的Al x 1 Ga 1-x 1 N（0‰×x1 <1）的第一p侧层（21），第二p侧层（22） 包括Mg的Al x 2 Ga 1-x 2 N（0

公开(公告)号：EP1145331B1

公开(公告)日：2013-07-17

申请号：EP00987172.4

申请日：2000-11-20

申请人： OSRAM Opto Semiconductors GmbH

发明人： HÄRLE, Volker ,  HAHN, Berthold ,  LUGAUER, Hans-Jürgen ,  BOLAY, Helmut ,  BADER, Stefan ,  WEIMAR, Andreas ,  EISERT, Dominik ,  STRAUSS, Uwe ,  VÖLKL, Johannes ,  ZEHNDER, Ulrich ,  LELL, Alfred

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

公开(公告)号：EP2463922A3

公开(公告)日：2013-05-29

申请号：EP12158438.7

申请日：2000-06-07

申请人： Nichia Corporation

发明人： Tanizawa, Koji

IPC分类号： H01L33/32 ,  H01L31/072 ,  H01L31/109 ,  H01L29/68 ,  H01S5/343 ,  H01L33/06

CPC分类号： B82Y20/00 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/025 ,  H01L33/06 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3407 ,  H01S5/34333 ,  Y02E10/544

摘要： An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1-xN (0 16 to 2 × 10 18 /cm 3 .

公开(公告)号：EP2262068A3

公开(公告)日：2012-04-25

申请号：EP10182268.2

申请日：2001-07-06

申请人： Nichia Corporation

发明人： Kozaki, Tokuya

IPC分类号： H01S5/343 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/24 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/343 ,  H01S5/34333 ,  H01S2304/12

摘要： In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

摘要翻译： 在本发明的氮化物半导体器件中，有源层12夹在p型氮化物半导体层11和n型氮化物半导体层13之间。有源层12至少具有阻挡层2a， n型杂质; 由包括In的氮化物半导体制成的阱层1a; 以及具有p型杂质的阻挡层2c，或已经未掺杂地生长的势垒层2c。 通过布置最靠近p型层侧的势垒层2c，能够将载流子适当地注入到有源层12中。

公开(公告)号：EP2262067A3

公开(公告)日：2012-01-04

申请号：EP10165590.0

申请日：2010-06-10

申请人： Forschungsverbund Berlin e.V.

发明人： Crump, Paul ,  Erbert, Götz ,  Pietrzak, Agnieszka ,  Wenzel, Hans ,  Bugge, Frank ,  Zorn, Martin

IPC分类号： H01S5/32 ,  H01S5/20 ,  H01S5/22 ,  H01S5/34

CPC分类号： H01S5/32 ,  B82Y20/00 ,  H01S5/2031 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3407 ,  H01S2301/18

摘要： Die vorliegende Erfindung betrifft eine Hochleistungslaserdiode mit einer vorteilhaften Energieabstrahlung im Fernfeld, d.h. Abstrahlung mit einem schmalen vertikalen Fernfeld.
Es ist Aufgabe der vorliegenden Erfindung, eine Hochleistungslaserdiode und ein Verfahren zu deren Herstellung anzugeben, die trotz relativ geringer Weftenfeiterschichtdicken eine Abstrahlung mit geringer Divergenz bezogen auf das vertikale Fernteld aufweist. Dadurch soll insbesondere eine effiziente Einkopplung der Laserstrahlung in optische Systeme, z.B. eine Lichtleitfaser, gewährleistet werden.
Erfindungsgemäß weist die wobei die aktive Schicht (10) eine Quantentopfstruktur auf, bei der mindestens eine Topfschicht (20) und mindestens zwei Barriereschichten (22) abwechselnd aufeinander geschichtet sind, wobei die jeweils den Wellenleiterschichten (12, 16) nächstgelegenen Barriereschichten (22a, 22b) eine Brechzahl aufweisen, die kleiner oder gleich als die Brechzahl der jeweils angrenzenden Wellenleiterschicht (12, 16) ist.