利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

80 条记录 (耗时 0.015 秒)

    Surface acoustic wave matched filter
    41.
    发明公开
    Surface acoustic wave matched filter 审中-公开
    Signalangepasstes过滤器akustischenOberflächenwellen

    公开(公告)号：EP0973257A2

    公开(公告)日：2000-01-19

    申请号：EP99305596.1

    申请日：1999-07-14

    申请人： NGK INSULATORS, LTD.

    发明人： Tanaka, Mitsuhiro ,  Shibata, Tomohiko ,  Hori, Yuji

    IPC分类号： H03H9/64

    CPC分类号： H03H9/6416

    摘要： A surface acoustic wave matched filter for use in a spread spectrum communication system is disclosed. The surface acoustic wave matched filter includes a substrate having a dispersity and is composed of a sapphire main body and a piezoelectric aluminum nitride. A tap distance L of an output side electrode is designed on the basis of a group velocity v g instead of a phase velocity v s in order to match the tap distance L with an input spread spectrum signal and to improve a correlation peak level of an output demodulated signal. When the tap distance L is set to satisfy a condition of v g /f 1 × 0.97 ≦ L ≦ v g /f 1 × 1.02, a decrease in the correlation peak level of the matched filter can be improved from 7 dB to a value small than 3 dB, and S/N of the output demodulated signal can be increased. Then, it is no more necessary to process the output demodulated signal by a complicated and power consuming circuit.

    摘要翻译： 公开了一种用于扩频通信系统中的表面声波匹配滤波器。 声表面波匹配滤波器包括具有分散性的基板，并由蓝宝石主体和压电氮化铝构成。 基于组速度vg而不是相位速度vs来设计输出侧电极的抽头距离L，以使抽头距离L与输入扩频信号相匹配，并且提高输出解调的相关峰值电平 信号。 当分接距离L设定为满足vg / f1×0.97

    Surface acoustic wave device comprising langasite single crystal substrate
    44.
    发明公开
    Surface acoustic wave device comprising langasite single crystal substrate 失效
    AkustischeOberflächenwellenanordnungmit monokristallinem Langasitsubstrat

    公开(公告)号：EP0865156A2

    公开(公告)日：1998-09-16

    申请号：EP98301913.4

    申请日：1998-03-13

    申请人： NGK INSULATORS, LTD. ,  Takeuchi, Masao

    发明人： Takeuchi, Masao ,  Tanaka, Mitsuhiro ,  Imanishi, Yuichiro

    IPC分类号： H03H9/02

    CPC分类号： H03H9/0259

    摘要： A surface acoustic wave device including a substrate and an electrode structure formed on the substrate, said substrate being made of an X-cut Langasite single crystal, a rotation Y-cut Langasite single crystal or a double rotation Y-cut Langasite single crystal. When the X-cut Langasite crystal having a large reflection coefficient is used, the electrode structure is formed to constitute a surface acoustic wave resonator. When the rotation Y-cut Langasite crystal having a large electromechanical coupling coefficient and a small reflection coefficient is used, the electrode structure is formed to constitute a surface acoustic wave filter. When the double rotation Y-cut Langasite crystal having an NSPUDT property is used, the electrode structure is formed to constitute a surface acoustic wave filter having a low insertion loss and an excellent phase property.

    摘要翻译： 一种表面声波装置，包括基板和形成在基板上的电极结构的表面声波装置，所述基板由X切割斜长石单晶，旋转Y切割斜长石单晶或双旋转Y切割朗氏石单晶制成。 当使用具有大反射系数的X切割朗氏硅酸盐晶体时，形成电极结构以构成表面声波谐振器。 当使用具有大的机电耦合系数和小的反射系数的旋转Y切割朗氏硅酸盐晶体时，形成电极结构以构成表面声波滤波器。 当使用具有NSPUDT特性的双旋转Y型朗氏硅酸盐晶体时，形成电极结构以构成具有低插入损耗和优异的相位特性的表面声波滤波器。

    Surface acoustic wave device
    45.
    发明公开
    Surface acoustic wave device 失效
    AkustischeOberflächenwellenanordnung

    公开(公告)号：EP0704967A2

    公开(公告)日：1996-04-03

    申请号：EP95306381.5

    申请日：1995-09-12

    申请人： Takeuchi, Masao ,  Yamanouchi, Kazuhiko ,  NGK INSULATORS, LTD.

    发明人： Tanaka, Mitsuhiro ,  Takeuchi, Masao ,  Yamanouchi, Kazuhiko ,  Odagawa, Hiroyuki

    IPC分类号： H03H9/145

    CPC分类号： H03H9/02543 ,  H03H9/14505

    摘要： A surface acoustic wave device including a piezoelectric substrate (21) having NSPUDT behaviour and a directionality reversed electrode structure including positive electrode (23a), negative electrode (23b) and floating electrode (23c). Positive and negative electrode fingers each having a width of λ/8 are arranged interdigitally at a pitch of λ and floating electrode fingers having a width of 3 λ/8 are arranged between successive positive and negative fingers with an edge distance of λ/8. A directivity due to NSPUDT behavior of the substrate can be reversed. Positive and negative electrode fingers are arranged interdigitally at a pitch of λ and between successive positive and negative electrode fingers are arranged floating electrode fingers having a reflecting coefficient different from that of the positive and negative electrodes.

    摘要翻译： 包括具有NSPUDT特性的压电基板（21）和包括正极（23a），负极（23b）和浮动电极（23c）的方向性反转电极结构的表面声波装置。 每个具有λ/ 8宽度的正电极指和负电极指以十字形排列，并且具有3λ/ 8宽度的浮动电极指，布置在连续的正极和负极之间，边缘距离为λ/ 8。 由于衬底的NSPUDT行为引起的方向性可以颠倒。 正和负电极指以十字指数配置，并且在连续的正极和负极指之间布置浮置电极指，其反射系数不同于正极和负极的反射系数。

    Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
    50.
    发明公开
    Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
    外延基板为半导体装置，半导体装置和方法，用于制造外延衬底的半导体装置

    公开(公告)号：EP2290675A2

    公开(公告)日：2011-03-02

    申请号：EP10172643.8

    申请日：2010-08-12

    申请人： NGK Insulators, Ltd.

    发明人： Miyoshi, Makoto ,  Kuraoka, Yoshitaka ,  Sumiya, Shigeaki ,  Ichimura, Mikiya ,  Sugiyama, Tomohiko ,  Tanaka, Mitsuhiro

    IPC分类号： H01L21/335 ,  H01L29/20 ,  H01L29/778

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

    摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate (1), a channel layer (3) formed of a first group III nitride that contains at least Al and Ga and has a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1) is formed. On the channel layer (3), a barrier layer (5) formed of a second group III nitride that contains at least In and Al and has a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

    摘要翻译： 本发明提供一种能够实现半导体器件的外延衬底确实具有优良的肖特基接触特性以及满意的器件特性。 在基底基板（1），一个沟道层（3）形成的第一III族氮化物的那样至少含有Al和Ga，具有在X1的Al Y1镓Z1 n的组合物（X1 + Y1 + Z1 = 1）是 形成。 在沟道层（3），阻挡层（5）形成的第二III族氮化物做了至少含有In和Al，并具有在X2的Al Y2镓Z2 N（X2 + Y 2 + Z 2 = 1）的组合物 FORMED搜索的确在在表面附近部的组成比是比该表面附近部以外的部分的In组成比要小。