公开(公告)号：EP1267393B1

公开(公告)日：2016-04-13

申请号：EP02012993.8

申请日：2002-06-12

申请人： NGK Insulators, Ltd.

发明人： Shibata, Tomohiko ,  Keiichiro, Asai ,  Sumiya, Shigeaki ,  Tanaka, Mitsuhiro

IPC分类号： H01L21/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

公开(公告)号：EP1207215B1

公开(公告)日：2013-07-24

申请号：EP01127023.8

申请日：2001-11-14

申请人： NGK Insulators, Ltd.

发明人： Shibata, Tomohiko ,  Nakamura, Yukinori ,  Tanaka, Mitsuhiro ,  Asai, Keiichiro

IPC分类号： C23C16/30 ,  C23C16/44 ,  C30B25/02 ,  C30B29/40 ,  C30B25/08 ,  H01L21/20

CPC分类号： C23C16/301 ,  C23C16/4404 ,  C30B25/02 ,  C30B29/403

公开(公告)号：EP2290696A3

公开(公告)日：2012-09-12

申请号：EP10172363.3

申请日：2010-08-10

申请人： NGK Insulators, Ltd.

发明人： Miyoshi, Makoto ,  Kuraoka, Yoshitaka ,  Sumiya, Shigeaki ,  Ichimura, Mikiya ,  Sugiyama, Tomohiko ,  Tanaka, Mitsuhiro

IPC分类号： H01L29/778 ,  H01L29/201

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供一种能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga且组成为Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的第一III族氮化物形成的沟道层。 在沟道层上，形成由至少包含In和Al且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的势垒层，使得近表面 部分比近表面部分以外的部分的In组成比大。

公开(公告)号：EP2290696A2

公开(公告)日：2011-03-02

申请号：EP10172363.3

申请日：2010-08-10

申请人： NGK Insulators, Ltd.

发明人： Miyoshi, Makoto ,  Kuraoka, Yoshitaka ,  Sumiya, Shigeaki ,  Ichimura, Mikiya ,  Sugiyama, Tomohiko ,  Tanaka, Mitsuhiro

IPC分类号： H01L29/778 ,  H01L29/201

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 本发明提供一种能够实现半导体器件的外延衬底确实具有优良的欧姆接触特性以及满意的器件特性。 上的基底基板，形成在第一III族氮化物制成的沟道层那样至少含有Al和Ga，具有在X1的Al Y1 Z1镓N中的一个组合物（X1 + Y1 + Z1 = 1）形成。 在沟道层，形成的第二III族氮化物构成的势垒层做至少包含In和Al，并具有在X2的Al Y2镓Z2 N中的一个组合物（X2 + Y 2 + Z 2 = 1）形成搜索的确在In组成 的近表面部分的比大于在除表面附近部以外的部分的In组成比。

公开(公告)号：EP2251464A2

公开(公告)日：2010-11-17

申请号：EP10250839.7

申请日：2010-04-27

申请人： NGK Insulators, Ltd.

发明人： Ichimura, Mikiya ,  Miyoshi, Makoto ,  Tanaka, Mitsuhiro

IPC分类号： C30B25/02 ,  H01L21/335 ,  H01L29/778 ,  C30B29/38 ,  H01L21/02

CPC分类号： C30B25/02 ,  C30B19/00 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with A1N. A barrier layer is formed on the spacer layer with group III nitride having a composition of In x Al y Ga z N (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, A1N, and GaN as vertexes.

公开(公告)号：EP1335435A3

公开(公告)日：2010-03-24

申请号：EP03002738.7

申请日：2003-02-06

申请人： NGK INSULATORS, LTD.

发明人： Tanaka, Mitsuhiro ,  Shibata, Tomohiko ,  Oda, Osamu ,  Egawa, Takashi, 405 Green Heights Ieiyakushi

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01L21/205

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/173

摘要： An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high light emission efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 10 11 /cm 2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 10 /cm 2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 10 /cm 2 or less, as well.

公开(公告)号：EP1369905A3

公开(公告)日：2009-09-16

申请号：EP03010820.3

申请日：2003-05-14

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko ,  Asai, Keiichiro ,  Sumiya, Shigeaki ,  Tanaka, Mitsuhiro

IPC分类号： H01L21/20 ,  C30B29/38 ,  C30B25/02

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/08 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L29/2003 ,  Y10T428/265

摘要： A group III nitride film is formed on an epitaxial substrate having an underlayer film containing Al. According to the present invention, the change of the properties of the III nitride film may be reduced. The properties of the semiconductor device may be thus reduced and the production yield may be improved. An underlayer 2 made of a group III nitride containing at least Al is formed on a substrate 1 made of a single crystal. An oxide film 3 is formed on the underlayer film 2 to produce an epitaxial substrate 10. The oxygen content of the oxide film 3 at the surface is not lower than 3 atomic percent and the thickness is not larger than 50 angstrom.

公开(公告)号：EP1263029A3

公开(公告)日：2009-02-25

申请号：EP02011962.4

申请日：2002-05-29

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko ,  Asai, Keiichiro ,  Oda, Osamu ,  Tanaka, Mitsuhiro

IPC分类号： H01L21/20

CPC分类号： H01L29/812 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7371 ,  H01L29/7787

摘要： A semiconductor element includes a conductive SiC base having a resistivity of less than 1×10 5 Ωcm, an underlayer made of a semiconductor nitride including at least Al element which is formed on the SiC base, and a semiconductor nitride layer group made including at least one of Al element, Ga element and In element.

公开(公告)号：EP1215308A3

公开(公告)日：2008-01-23

申请号：EP01129551.6

申请日：2001-12-11

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko ,  Nakamura, Yukinori ,  Tanaka, Mitsuhiro

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/205 ,  C23C16/30

CPC分类号： C23C16/301 ,  C23C16/4401 ,  C23C16/4411 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： A substrate is set on a susceptor installed in a reactor arranged horizontally. Then, a cooling jacket is provided at the opposite portion of the inner wall of the reactor to the substrate. By flowing a given cooling medium through the cooling jacket with a pump connected to the jacket, at least the opposite portion of the inner wall is cooled down, to inhibit the reaction between raw material gases introduced into the reactor. As a result, in fabricating a III-V nitride film, the film growth rate is developed and the crystal quality is developed.

公开(公告)号：EP1471582A1

公开(公告)日：2004-10-27

申请号：EP03290809.7

申请日：2003-03-31

申请人： NGK INSULATORS, LTD. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： Hori, Yuji ,  Oda, Osamu ,  Tanaka, Mitsuhiro ,  Daudin, Bruno ,  Monroy, Eva

IPC分类号： H01L33/00 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A GaN-based light-emitting diode on a sapphire substrate has an active layer containing quantum dots, which is sandwiched between p and n-type zones. The p-type material is deposited on a AlGaN or AIN buffer before the active layer is deposited. This yields in high quality p-type material which need not be thermally activated, but can be thermally activated, however, before deposition of the active layer. This avoids the risk of destroying the quantum dot structure by the activation treatment.
A group III nitride underlayer which contains at least Al, in which the dislocation density is ≤1 x 10 11 /cm 2 and whose (002) plane X-ray rocking curve half-value width is ≤200 seconds is formed on set base material. Next, a p-type semiconductor layer group which is constituted by a group III nitride in which the Ga content relative to the total group III elements is ≥50 at% and in which the carrier density is ≥1 x 10 16 /cm 3 is formed above the group III nitride underlayer. Next, a light-emitting layer which is contains plural mutually isolated insular crystals is formed on the p-type semiconductor layer group. Next, an n-type semiconductor layer group in which the Ga content relative to the total group III elements is ≥50 at% is formed on the light-emitting layer.