公开(公告)号：EP1335435A3

公开(公告)日：2010-03-24

申请号：EP03002738.7

申请日：2003-02-06

申请人： NGK INSULATORS, LTD.

发明人： Tanaka, Mitsuhiro ,  Shibata, Tomohiko ,  Oda, Osamu ,  Egawa, Takashi, 405 Green Heights Ieiyakushi

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01L21/205

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/173

摘要： An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high light emission efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 10 11 /cm 2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 10 /cm 2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 10 /cm 2 or less, as well.

公开(公告)号：EP1263029A3

公开(公告)日：2009-02-25

申请号：EP02011962.4

申请日：2002-05-29

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko ,  Asai, Keiichiro ,  Oda, Osamu ,  Tanaka, Mitsuhiro

IPC分类号： H01L21/20

CPC分类号： H01L29/812 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7371 ,  H01L29/7787

摘要： A semiconductor element includes a conductive SiC base having a resistivity of less than 1×10 5 Ωcm, an underlayer made of a semiconductor nitride including at least Al element which is formed on the SiC base, and a semiconductor nitride layer group made including at least one of Al element, Ga element and In element.

公开(公告)号：EP1471582A1

公开(公告)日：2004-10-27

申请号：EP03290809.7

申请日：2003-03-31

申请人： NGK INSULATORS, LTD. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： Hori, Yuji ,  Oda, Osamu ,  Tanaka, Mitsuhiro ,  Daudin, Bruno ,  Monroy, Eva

IPC分类号： H01L33/00 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A GaN-based light-emitting diode on a sapphire substrate has an active layer containing quantum dots, which is sandwiched between p and n-type zones. The p-type material is deposited on a AlGaN or AIN buffer before the active layer is deposited. This yields in high quality p-type material which need not be thermally activated, but can be thermally activated, however, before deposition of the active layer. This avoids the risk of destroying the quantum dot structure by the activation treatment.
A group III nitride underlayer which contains at least Al, in which the dislocation density is ≤1 x 10 11 /cm 2 and whose (002) plane X-ray rocking curve half-value width is ≤200 seconds is formed on set base material. Next, a p-type semiconductor layer group which is constituted by a group III nitride in which the Ga content relative to the total group III elements is ≥50 at% and in which the carrier density is ≥1 x 10 16 /cm 3 is formed above the group III nitride underlayer. Next, a light-emitting layer which is contains plural mutually isolated insular crystals is formed on the p-type semiconductor layer group. Next, an n-type semiconductor layer group in which the Ga content relative to the total group III elements is ≥50 at% is formed on the light-emitting layer.

公开(公告)号：EP1246262A2

公开(公告)日：2002-10-02

申请号：EP02006882.1

申请日：2002-03-26

申请人： NGK INSULATORS, LTD.

发明人： Wakahara, Akihiro ,  Shibata, Tomohiko ,  Oda, Osamu ,  Tanaka, Mitsuhiro

IPC分类号： H01L33/00 ,  H05B33/14

CPC分类号： H01J63/06 ,  B82Y10/00 ,  H01J2201/30469 ,  H01L33/325 ,  H01L33/502

摘要： A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.

摘要翻译： 发光元件（10）包括透明基板（1），在所述透明基板（1）上形成的包含稀土元素的III-V族氮化物半导体层（2）和电子束 3），其设置在与所述III-V族氮化物半导体层（2）的表面5mm以内，以​​与所述III-V族氮化物半导体层相对。 然后，通过来自照射源（3）的电子束激发III-V族氮化物半导体层中的稀土金属元素，并且发射稀土金属元素固有的给定荧光。

公开(公告)号：EP1220334B1

公开(公告)日：2011-04-13

申请号：EP01130937.4

申请日：2001-12-27

申请人： NGK Insulators, Ltd.

发明人： Hori, Yuji ,  Shibata, Tomohiko ,  Oda, Osamu ,  Tanaka, Mitsuhiro

IPC分类号： H01L33/12 ,  H01L33/32

CPC分类号： H01L33/325 ,  H01L33/007 ,  H01L33/12

公开(公告)号：EP1246262A3

公开(公告)日：2009-12-23

申请号：EP02006882.1

申请日：2002-03-26

申请人： NGK INSULATORS, LTD.

发明人： Wakahara, Akihiro ,  Shibata, Tomohiko ,  Oda, Osamu ,  Tanaka, Mitsuhiro

IPC分类号： H01J63/06 ,  C09K11/80

CPC分类号： H01J63/06 ,  B82Y10/00 ,  H01J2201/30469 ,  H01L33/325 ,  H01L33/502

摘要： A light-emitting element (10) includes a transparent substrate (1), a III-V nitride semiconductor layer (2) including rare earth metal elements which is formed on said transparent substrate (1), and an irradiation source of electron beam (3) which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer (2) so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source (3) and a given fluorescence inherent to the rare earth metal elements are emitted.

公开(公告)号：EP1220334A3

公开(公告)日：2006-08-02

申请号：EP01130937.4

申请日：2001-12-27

申请人： NGK INSULATORS, LTD.

发明人： Hori, Yuji ,  Shibata, Tomohiko ,  Oda, Osamu ,  Tanaka, Mitsuhiro

IPC分类号： H01L33/00

CPC分类号： H01L33/325 ,  H01L33/007 ,  H01L33/12

摘要： In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semi-conducting nitride material of which the FWHM is 90 second or below in X-ray rocking curve. Then, a light-emitting layer is made of a semi-conducting nitride material including at least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements and transition metal elements as an additive element.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线中的FWHM为90秒以下的高结晶性Al构成的半导体氮化物材料构成。 然后，发光层由半导体氮化物材料制成，该半导体氮化物材料包括选自由Al，Ga和In组成的组中的至少一种元素，并且含有至少一种选自稀土金属元素和过渡金属元素的元素作为 添加元素。

公开(公告)号：EP1223234A3

公开(公告)日：2006-04-05

申请号：EP02000792.8

申请日：2002-01-14

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko ,  Tanaka, Mitsuhiro ,  Oda, Osamu ,  Nakamura, Yukinori

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A III nitride buffer film including at least A1 element and having a screw-type dislocation density of 1×10 8 /cm 2 or below is formed on a base made of a sapphire single crystal, etc., to fabricate an epitaxial base substrate. Then, a III nitride underfilm is formed on the III nitride buffer film, to fabricate an epitaxial substrate.

公开(公告)号：EP1213767A3

公开(公告)日：2004-04-14

申请号：EP01128995.6

申请日：2001-12-06

申请人： NGK INSULATORS, LTD.

发明人： Hori, Yuji ,  Shibata, Tomohiko ,  Oda, Osamu ,  Tanaka, Mitsuhiro

IPC分类号： H01L29/20

CPC分类号： H01L29/66318 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/66856

摘要： On a substrate (1) is epitaxially grown an AIN film (2) as an underlayer having a dislocation density of 10 11 /cm 2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of X-ray rocking curve at (002) reflection. Then, on the AlN film (2) is epitaxially grown an n-GaN film (3) as a conductive layer having a dislocation density of 10 10 /cm 2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

公开(公告)号：EP1246263A2

公开(公告)日：2002-10-02

申请号：EP02006883.9

申请日：2002-03-26

申请人： NGK INSULATORS, LTD.

发明人： Hori, Yuji ,  Shibata, Tomohiko ,  Tanaka, Mitsuhiro ,  Oda, Osamu

IPC分类号： H01L33/00 ,  H05B33/14

CPC分类号： H01J63/04 ,  H01J63/06 ,  H01L33/32 ,  H01L33/502

摘要： A light-emitting element includes a light-emitting layer including a base layer made of a first nitride semiconductor and plural island-shaped crystal portions made of a second nitride semiconductor, and an irradiation source of electron beam which is disposed so as to be opposite to the light-emitting layer. Then, electron-electron hole pairs in the light-emitting layer are excited through the irradiation of electron beam from the irradiation source, to generate and emit a light.

摘要翻译： 发光元件包括：发光层，其包括由第一氮化物半导体构成的基底层和由第二氮化物半导体构成的多个岛状结晶部;以及电子束的照射源，其被配置成相对 到发光层。 然后，通过照射来自照射源的电子束来激发发光层中的电子 - 空穴对，从而产生并发射光。