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公开(公告)号：EP2518769A3
公开(公告)日：2014-01-29
申请号：EP12160821.0
申请日：2012-03-22
发明人： Jeon, Sang-hun , Song, I-hun , Ahn, Seung-eon , Kim, Chang-jung , Kim, Young
IPC分类号： H01L27/146 , H01L27/144
CPC分类号： H01L27/14632 , H01L27/1446 , H01L27/14603 , H01L27/14623
摘要： According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels (100), a first gate driver (210), and a signal output unit (230). Each of the light-sensing pixels may include a light sensor transistor (140) configured to sense light, a switch transistor (130) configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film (114) on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.
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42.发明公开Optical touch screen apparatuses and methods of driving the optical touch screen apparatuses 审中-公开Optische Touchscreen-Vorrichtungen und Verfahren zum Betreiben der optischen Touchscreen-Vorrichtungen
公开(公告)号：EP2521014A2
公开(公告)日：2012-11-07
申请号：EP12161138.8
申请日：2012-03-23
发明人： Ahn, Seung-eon , Song, I-hun , Jeon, Sang-hun , Kim, Young
CPC分类号： G06F3/0421 , G06F3/0412 , G06F3/0416 , G06F3/042
摘要： An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels.
摘要翻译： 使用氧化物半导体晶体管作为光感测装置的光学触摸屏装置以及驱动光学触摸屏装置的方法。 该光学触摸屏设备包括一个阵列，该阵列包括用于感测入射光的多个光感测像素，一个栅极驱动器，用于为每个感光像素提供栅极电压和复位信号;以及信号输出单元，用于接收光线感测信号 从多个感光像素中的每一个传输数据信号。 栅极驱动器包括多个栅极线，其向每个光感测像素提供栅极电压，以及至少一个复位线，其向每个光感测像素提供复位信号，并且电连接到多个光感测像素 。
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公开(公告)号：EP2357653A3
公开(公告)日：2012-04-11
申请号：EP11162613.1
申请日：2009-10-09
发明人： Park, Jae-chul , Kwon, Kee-won , Song, I-hun , Park, Young-soo , Kim, Chang-jung , Kim, Sang-wook , Kim, Sun-il
CPC分类号： G11C5/02 , G11C5/143 , G11C7/18 , G11C8/12 , G11C13/0023 , G11C2213/71
摘要： A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit.
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公开(公告)号：EP2357653A2
公开(公告)日：2011-08-17
申请号：EP11162613.1
申请日：2009-10-09
发明人： Park, Jae-chul , Kwon, Kee-won , Song, I-hun , Park, Young-soo , Kim, Chang-jung , Kim, Sang-wook , Kim, Sun-il
CPC分类号： G11C5/02 , G11C5/143 , G11C7/18 , G11C8/12 , G11C13/0023 , G11C2213/71
摘要： A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit.
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45.发明公开Image sensor using light-sensitive transparent oxide semiconductor material 有权Bildsensor mit lichtempfindlichem transparentem Oxidhalbleitermaterial
公开(公告)号：EP2341542A2
公开(公告)日：2011-07-06
申请号：EP10170692.7
申请日：2010-07-23
发明人： Park, Sung-ho , Song, I-hun , Hur, Ji-hyun , Jeon, Sang-hun
IPC分类号： H01L27/146
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L29/41733
摘要： An image sensor (100) includes a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers (110,120,130), a plurality of filter layers (140,150) and a plurality of transparent insulating layers (115). The light-sensing layers may be stacked in one unit pixel region.
摘要翻译： 图像传感器（100）包括多个感光透明氧化物半导体层作为感光层（110,120,130），多个滤光层（140,150）和多个透明绝缘层（115）。 光感测层可以堆叠在一个单位像素区域中。
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46.发明公开CMOS image sensor and method of manufacturing the same 审中-公开CMOS-Bildsensor und Verfahren zu dessen Herstellung
公开(公告)号：EP2249384A2
公开(公告)日：2010-11-10
申请号：EP10152306.6
申请日：2010-02-01
发明人： Park, Sung-ho , Song, I-hun , Lee, Wook , Kim, Sang-wook , Kim, Sun-il , Park, Jae-chul
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/1225 , H01L27/14609 , H01L27/14612 , H01L27/14641 , H01L27/14645 , H01L27/14689
摘要： Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.
摘要翻译： 提供了具有能够增加单位像素中的光电二极管的面积并且扩大光电二极管的光接收面积的结构的互补金属氧化物半导体（CMOS）图像传感器。 在CMOS图像传感器中，可以在光电二极管上形成传输晶体管，并且可以在不形成传输晶体管的层上形成复位晶体管，源极跟随器晶体管和选择晶体管。 在这种CMOS图像传感器中，可以以单位像素增加光电二极管的面积，从而可以降低单位像素的尺寸，并且可以提高像素的灵敏度。
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公开(公告)号：EP1320102B1
公开(公告)日：2007-10-24
申请号：EP02255748.2
申请日：2002-08-19
CPC分类号： G11C19/0808 , G11C11/15 , G11C11/16
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48.发明公开Magnetic random access memory cell comprising an oxidation preventing layer and method of manufacturing the same 审中-公开磁性随机存取存储器与氧化保护层，并处理它的制备
公开(公告)号：EP1471536A2
公开(公告)日：2004-10-27
申请号：EP04252197.1
申请日：2004-04-15
发明人： Park, Sang-jin , Kim, Tae-wan , Lee, Jung-hyun , Park, Wan-jun , Song, I-hun
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： A magnetic random access memory (MRAM) having middle oxide layers formed by a hetero-method and a method of manufacturing the same are provided. The MRAM including a magnetic tunneling junction (MTJ) formed of a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer. The tunneling oxide layer is formed by an atomic layer deposition (ALD) method, and the other material layers, particularly the oxidation preventing layer, are formed by a method other than the ALD method.
摘要翻译： 磁性随机存取存储器（MRAM）包括磁性隧道结（MTJ）层具有依次层叠下磁性层（62A），以在氧化上部磁性层防止层（62B），隧穿氧化物层（62C）及（62D） 在单位单元中。 所述MRAM还包括一个晶体管。 一个独立的claimsoft包括用于制造MRAM。
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