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    Magnetic memory device and method
    4.
    发明公开
    Magnetic memory device and method 有权
    Magnetspeichervorrichtung und Verfahren

    公开(公告)号：EP1667160A1

    公开(公告)日：2006-06-07

    申请号：EP05257422.5

    申请日：2005-12-02

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hwang, In-jun, Samsung Advanced Inst. of Tech. ,  Kim, Tae-wan ,  Jeong, Won-cheol

    IPC分类号： G11C11/16

    CPC分类号： G11C11/16

    摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

    摘要翻译： 磁性随机存取存储器（MRAM）器件的示例性实施例包括具有自由层的磁性隧道结，具有覆盖自由层的表面的第一部分的第一电极（第一磁场产生装置）和电力 源极经由覆盖小于第一电极的第一部分的一半的连接而连接到第一电极。 MRAM器件的另一个示例性实施例包括磁性隧道结，直接连接到磁性隧道结相对侧上的磁性隧道结的第一和第二电极（第一和第二磁场产生装置）和具有一个极点的电源 经由第一连接器连接到第一电极，并且具有通过第二连接连接到第二电极的第二极，其中第一和第二连接部从第一和第二电极与磁性隧道结之间的连接侧向偏移。 还公开了操作和制造这些磁性随机存取存储器的方法。

    Magnetic ram using thermo-magnetic spontaneous hall effect and method of writing and reading data using the magnetic ram
    10.
    发明公开
    Magnetic ram using thermo-magnetic spontaneous hall effect and method of writing and reading data using the magnetic ram 有权
    与自发霍尔效应和热磁数据的磁RAM存储器写入使用这样的读出方法

    公开(公告)号：EP1376602A2

    公开(公告)日：2004-01-02

    申请号：EP03250442.5

    申请日：2003-01-24

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Kim, Tae-wan ,  Kim, Kee-Won, c/o Samsung Advanced Inst. Of Techn. ,  Park, Wan-Jun ,  Song, I-Hun ,  Park, Sang-Jin

    IPC分类号： G11C11/18

    CPC分类号： G11C11/18 ,  G11C11/1675

    摘要： A magnetic RAM using a thermo-magnetic spontaneous hall effect, and a data writing and reading method using the magnetic RAM are provided. The magnetic RAM includes a MOS transistor, a memory layer, a heating means, and a write line. The memory layer is connected to the source of the MOS transistor and writes data to itself. The heating means heats the memory layer. The write line applies a magnetic field to the memory layer in order to change the magnetization state of the heated memory layer. The magnetic RAM can increase the coercivity caused by highly-integration and improves the thermal security of a cell. The MRAM can operate at an ultra speed because of a small cell resistance. In addition, since the magnetic RAM can be simply manufactured by an existing semiconductor manufacturing process, the manufacturing costs are reduced. Furthermore, since the magnetic RAM writes or reads data using the fact that a spontaneous hall voltage greatly differs according to the magneticization state of a memory layer, it provides a high data sensing margin.

    摘要翻译： 提供了使用一个热磁自发霍尔效应的磁性RAM，以及使用该磁性RAM的数据写入和读出方法。 磁RAM包括一个MOS晶体管，存储层，一个加热装置，并写入线。 存储层被连接到MOS晶体管的源极和自身写入数据。 所述加热装置加热所述存储层。 所述的WriteLine施加磁场到所述存储器层中以改变被加热的存储层的磁化状态。 磁性RAM可以增加高度整合引发的矫顽力，提高了电池的热安全性。 所述MRAM可在超速度由于小单元电阻的操作。 另外，由于磁RAM可通过现有的半导体制造工艺来简单地制造，制造成本得以降低。 进一步，由于在磁性RAM写入或使用factthat自发霍尔电压有很大不同gemäß到存储器层的magneticization状态读取数据时，它提供了一个高的数据的感测裕度。