A METHOD OF DEPOSITING NIOBIUM DOPED TITANIA FILM ON A SUBSTRATE AND THE COATED SUBSTRATE MADE THEREBY
    42.
    发明公开
    A METHOD OF DEPOSITING NIOBIUM DOPED TITANIA FILM ON A SUBSTRATE AND THE COATED SUBSTRATE MADE THEREBY 审中-公开
    过程,以基板的NIOBDOTIERTEN TiO2薄膜,从而分离MANUFACTURED涂布基材

    公开(公告)号:EP2563734A2

    公开(公告)日:2013-03-06

    申请号:EP11716147.1

    申请日:2011-04-15

    IPC分类号: C03C17/00

    摘要: A coated article includes a pyrolytic applied transparent electrically conductive oxide film of niobium doped titanium oxide. The article can be made by using a coating mixture having a niobium precursor and a titanium precursor. The coating mixture is directed toward a heated substrate to decompose the coating mixture and to deposit a transparent electrically conductive niobium doped titanium oxide film on the surface of the heated substrate. In one embodiment of the invention, the method is practiced using a vaporized coating mixture including a vaporized niobium precursor; a vaporized titanium precursor, and a carrier gas to deposit a niobium doped titanium oxide film having a sheet resistance greater than 1.2 and an index of refraction of 2.3 or greater. The chemical formula for the niobium doped titanium oxide is Nb:TiOX where X is in the range of 1.8-2.1.

    摘要翻译: 一种涂覆制品包括热解应用透明导电性氧化物膜的铌掺杂的钛氧化物。 该制品可通过使用具有铌前体和钛前体的涂层混合物制成。 该涂层混合物朝向加热基板引导到分解涂料混合物,并加热衬底的表面上的薄膜沉积透明导电铌掺杂的钛氧化物。 在本发明的一个实施方案中,该方法是使用蒸发的涂层混合物包含气化的前体铌实践; 汽化钛前体,和载气来沉积的薄层电阻小于1.2和在2.3或更大的折射率更高的铌掺杂的钛氧化物具有膜。 对于铌掺杂的钛氧化物的化学式为Nb:的TiO x,其中x在1.8-2.1的范围内。

    PROCESS AND INSTALLATION FOR DEPOSITING FILMS ONTO A SUBSTRATE
    45.
    发明授权
    PROCESS AND INSTALLATION FOR DEPOSITING FILMS ONTO A SUBSTRATE 有权
    方法和系统为电影的一个基质添加

    公开(公告)号:EP2310554B8

    公开(公告)日:2012-04-11

    申请号:EP09797507.2

    申请日:2009-07-16

    申请人: AGC Glass Europe

    摘要: The process comprises introducing or rolling a substrate in a reaction chamber (6) in which two electrodes (4, 10) are placed, where a dielectric barrier is positioned between the electrodes, generating a high frequency voltage to generate a plasma (12) between the electrodes, operating an adjustable inductor (L) arranged in parallel with own installation inductor generating voltage to reduce the phase difference between voltage and the generated current, and introducing a mixture (8) of which the composition is contacting the plasma into the reaction chamber. The process comprises introducing or rolling a substrate in a reaction chamber (6) in which two electrodes (4, 10) are placed, where a dielectric barrier is positioned between the electrodes, generating a high frequency voltage to generate a plasma (12) between the electrodes, operating an adjustable inductor (L) arranged in parallel with own installation inductor generating voltage to reduce the phase difference between voltage and the generated current, introducing a mixture (8) of which the composition is contacting the plasma into the reaction chamber, adjusting the voltage and/or frequency provided by the generator circuit and/or the value of the adjustable inductor at the beginning or during the process to obtain optimal characteristics of reaction, and maintaining the substrate in the chamber for a sufficient time to obtain a layer of desired thickness on the surface. The mixture is decomposed and generates species to deposit a layer on the substrate. The process further comprises adjusting the voltage and/or the frequency provided by the circuit generator and/or the value of the inductor to enhance the harmonic production extending the time during which voltage remains greater than the value of maintaining the electric charge, and changing the position and/or the configuration of an electrode to obtain the optimal characteristics of the reaction. The harmonics is enhanced in the order of 3-5. The chamber is opened or closed at its two ends, and comprises an inlet area and an outlet area for the substrate. The substrate insulates and forms a dielectric barrier and electrode. The mixture is introduced into the reaction chamber in the form of a reactive gas, a liquid reagent, and a reactive powder. An independent claim is included for an installation for depositing a layer on a substrate.

    Carrier for a substrate and a method for assembling the same
    47.
    发明公开
    Carrier for a substrate and a method for assembling the same 有权
    Substratträgerund Aufbauverfahrendafür

    公开(公告)号:EP2423350A1

    公开(公告)日:2012-02-29

    申请号:EP10174387.0

    申请日:2010-08-27

    IPC分类号: C23C14/50

    摘要: The present invention is relates to carriers for substrates and to methods for assembling the same in the field of vacuum deposition of thin films. In particular, the present invention is directed a carrier (1) for a substrate to be coated in a vacuum chamber comprising: a first frame (3) comprising two vertical sections (32) and two horizontal sections (31) being dimensioned to surround the substrate; a second frame (2) dimensioned to define an area of the substrate to be coated, and to cover at least a first part (33) of the first frame (3) to prevent the first part (33) of the first frame (3) from being coated when the second frame (2) is mounted to the first frame (3); and wherein the second frame (2) is detachably mounted to the first frame (3).

    摘要翻译: 本发明涉及衬底的载体及其在薄膜真空沉积领域的组装方法。 特别地,本发明涉及一种用于要涂覆在真空室中的基底的载体(1),包括:包括两个垂直部分(32)和两个水平部分(31)的第一框架(3),其尺寸被设计成围绕 基质; 第二框架(2)的尺寸设置成限定待涂覆的基底的区域,并且覆盖第一框架(3)的至少第一部分(33)以防止第一框架(3)的第一部分(33) )在第二框架(2)安装到第一框架(3)时被涂覆; 并且其中所述第二框架(2)可拆卸地安装到所述第一框架(3)。

    PROCÉDÉ DE DÉPÔT DE COUCHE MINCE
    48.
    发明公开
    PROCÉDÉ DE DÉPÔT DE COUCHE MINCE 审中-公开
    薄膜淀积法

    公开(公告)号:EP2406196A1

    公开(公告)日:2012-01-18

    申请号:EP10715315.7

    申请日:2010-03-10

    IPC分类号: C03C17/00 C23C14/08 C23C14/58

    摘要: The invention relates to a method for flame heat treating at least one thin film deposited onto a glass substrate (1) moving in line with a flame treatment device that includes at least one burner (2), said treatment being suitable for increasing the crystallization rate of said at least one thin film and/or increasing the size of the crystallites in said at least one thin film, said method being characterized in that the maximum transient bending "b" is less than 150 mm and adheres to the following condition:
    b ≤ 0.9 xd where the bending "b" corresponds to the distance, expressed in mm, between the unheated substrate plane (P1) and the substrate point closest to the plane (P2) passing through the nozzle (6) of the burner (2) and parallel to the unheated substrate plane (P1), and "d" corresponds to the distance, expressed in mm, between the unheated substrate plane (P1) and the nozzle (6) of the burner (2), the substrate width "L" in a direction perpendicular to the moving direction (5) being greater than or equal to 1.1 meters.