公开(公告)号：EP1887638A4

公开(公告)日：2011-03-02

申请号：EP06732274

申请日：2006-04-24

Applicant: MURATA MANUFACTURING CO

Inventor： YAMAMOTO ATSUSHI ,  DEGUCHI YOICHI ,  HAYASHI KOICHI

IPC: H01L41/083 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  C04B35/49 ,  C04B35/493 ,  H01L41/09 ,  H01L41/187 ,  H01L41/22 ,  H01L41/273 ,  H01L41/297 ,  H02N2/00

CPC classification number: H01L41/083 ,  C04B35/493 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/6025 ,  C04B2235/6584 ,  C04B2235/79 ,  H01L41/0477 ,  H01L41/1876 ,  H01L41/273 ,  H01L41/297

Abstract: A piezoelectric device is formed by simultaneously firing a piezoelectric ceramic mainly composed of a perovskite complex oxide represented by general formula ABO 3 and electrodes mainly composed of copper. The piezoelectric ceramic is represented by Pb ±-a Me a [(M II 1/3 M V (2+b)/3)z Ti x Zr 1-x-z ]O 3 (wherein Me represents a metal element, M II is an acceptor element which is a divalent metal element, and M V is a donor element which is a pentavalent metal element), and satisfies equations 0.05 ‰ z ‰ 0.40, 0

公开(公告)号：EP2228353A1

公开(公告)日：2010-09-15

申请号：EP08864787.0

申请日：2008-12-24

Applicant: Hitachi Metals, Ltd.

Inventor： The designation of the inventor has not yet been filed

IPC: C04B35/46 ,  H01C7/02

CPC classification number: C04B35/4682 ,  C01G23/002 ,  C01G23/006 ,  C01G29/006 ,  C01P2002/52 ,  C01P2006/40 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/608 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/80 ,  C04B2235/85 ,  H01C7/025

Abstract: There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO 3 is substituted with Bi-Na, the semiconductor ceramic composition being capable of arbitrary controlling jump characteristic while maintaining room temperature resistivity low.
A semiconductor ceramic composition in which a part of Ba of BaTiO 3 is substituted with Bi-Na, the composition having a P-type semiconductor at a grain boundary, is provided, and existence ratio of the P-type semiconductor is changed by calcination conditions, addition amount of additives, sintering conditions, and the like to thereby arbitrary control room temperature resistivity while maintaining jump characteristic high.

Abstract translation: 提供了一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，该半导体陶瓷组合物能够任意控制跳跃特性，同时保持室温电阻率较低。 提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，该组合物在晶界处具有P型半导体，并且通过煅烧条件改变P型半导体的存在比 ，添加量的添加量，烧结条件等，从而任意控制室温电阻率，同时保持跳跃特性高。

公开(公告)号：EP2137779A1

公开(公告)日：2009-12-30

申请号：EP08748596.7

申请日：2008-05-16

Applicant: Byd Company Limited

Inventor： TIAN, Ye ,  CHENG, Tangli ,  GONG, Zhengang

IPC: H01M4/48 ,  H01M4/04 ,  H01M10/40

CPC classification number: C04B35/62839 ,  C04B35/447 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3272 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/447 ,  H01M4/0471 ,  H01M4/13 ,  H01M4/364 ,  H01M4/366 ,  H01M4/485 ,  H01M4/5825 ,  H01M4/625 ,  H01M10/052 ,  H01M2300/004

Abstract: The present invention provides a cathode active material for a lithium ion battery, and preparation method thereof. The cathode active material comprises a sintered product, the sintered product is formed by sintering lithium iron phosphate with at least one metal oxide. The metal oxide is the oxide of metals selected from a group consisting of elements of IIA, 5 IIIA, IV A, V A, IIIB, IVB, and VB. The lithium ion battery prepared from the lithium ion battery cathode active material provided in th e present invention has dramatically improved capacity.

公开(公告)号：EP2045846A2

公开(公告)日：2009-04-08

申请号：EP08253214.4

申请日：2008-10-02

Applicant: NGK Insulators, Ltd.

Inventor： Ozawa, Shuichi ,  Yamaguchi, Hirofumi

IPC: H01L41/187 ,  C04B35/495 ,  H01L41/09 ,  H01L41/083

CPC classification number: C04B35/495 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3251 ,  C04B2235/3267 ,  C04B2235/3294 ,  C04B2235/449 ,  C04B2235/768 ,  C04B2235/79 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/187

Abstract: The invention provides a (Li, Na, K)(Nb, Ta, Sb)O 3 type piezoelectric/electrostrictive ceramic composition excellent in the electric field-induced strain at the time of high electric field application. The piezoelectric/electrostrictive film (122,222,224) of a piezoelectric/electrostrictive actuator (1,2) is a sintered body of said piezoelectric/electrostrictive ceramic composition. The piezoelectric/electrostrictive ceramic composition comprises a perovskite type oxide comprising Li, Na, and K as A site elements and Nb and Sb as B site elements and having a ratio of the total number of atoms of the A site elements to the total number of atoms of the B site elements greater than 1 and not less than 1 mol% and not more than 10 mol% of the number of Sb atoms in the total number of atoms of the B site elements and a Mn compound added to said perovskite type oxide.

Abstract translation: 本发明提供了在高电场施加时电场诱导应变优异的（Li，Na，K）（Nb，Ta，Sb）O 3型压电/电致伸缩陶瓷组合物。 压电/电致伸缩致动器（1,2）的压电/电致伸缩膜（122,222,224）是所述压电/电致伸缩陶瓷组合物的烧结体。 压电/电致伸缩陶瓷组合物包含包含Li，Na和K作为位点元素的钙钛矿型氧化物，Nb和Sb作为B位点元素，并且A位点元素的总原子数与 B位元素的原子大于1且不小于B位元素的总原子数中的Sb原子数的1mol％且不大于10mol％，以及添加到所述钙钛矿型氧化物中的Mn化合物 。

公开(公告)号：EP2038399A2

公开(公告)日：2009-03-25

申请号：EP07799525.6

申请日：2007-07-12

Applicant: NANOPHASE TECHNOLOGIES CORPORATION

Inventor： COY, Dan ,  HAINES, Robert ,  SARKAS, Harry

IPC: C12C11/11

CPC classification number: C04B35/453 ,  B01J23/002 ,  B01J35/1014 ,  B01J37/349 ,  B01J2523/00 ,  B82Y30/00 ,  C01G1/02 ,  C01G9/02 ,  C01G19/02 ,  C01P2002/50 ,  C01P2002/52 ,  C01P2004/04 ,  C01P2006/80 ,  C04B35/457 ,  C04B35/50 ,  C04B35/62675 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3291 ,  C04B2235/3294 ,  C04B2235/5409 ,  C04B2235/5454 ,  C11D7/20 ,  C11D17/049 ,  Y10T428/2982 ,  B01J2523/3712 ,  B01J2523/3718 ,  B01J2523/48 ,  B01J2523/3706

Abstract: Lattice doped stoichiometric-nanostructured materials having a plurality of discrete nanocrystalline particles, which are at least 95% crystalline, and a dopant either substituted in at least one nanocrystalline particle crystal lattice or interstitially located between crystal lattices or crystal planes of the nanocrystalline particles.

公开(公告)号：EP1972607A1

公开(公告)日：2008-09-24

申请号：EP06811893.4

申请日：2006-10-17

Applicant: Murata Manufacturing Co. Ltd.

Inventor： KIMURA, Masahiko ,  SHIRATSUYU, Kosuke

IPC: C04B35/626 ,  C01G33/00 ,  C30B29/30

CPC classification number: C01G33/006 ,  C01G35/006 ,  C01P2002/52 ,  C01P2004/54 ,  C04B35/495 ,  C04B35/62665 ,  C04B35/62675 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3294 ,  C04B2235/3418 ,  C04B2235/444 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/787 ,  Y10T428/2982

Abstract: Anisotropically shaped ceramic particles of the present invention are represented by the general formula {(K 1-x-y Na x Li y ) 4 (Nb 1-z Ta z ) 6 O 17 + aMeO b } (where Me is at least one element selected from the group consisting of antimony, copper, manganese, vanadium, silicon, titanium, and tungsten; and b is a positive number determined by the valence of Me), where x, y, z, and a satisfy 0 ≤ x ≤ 0.5, 0 ≤ y ≤ 0.3, 0 ≤ z ≤ 0.3, and 0.001 ≤ a ≤ 0.1, respectively. The anisotropically shaped ceramic particles have a plate-like shape. The average particle size is 1 to 100 µm, and the ratio D/t of a maximum diameter D of a main surface to a thickness t in a direction perpendicular to the main surface is 2 or more, preferably 5 or more. Thus, anisotropically shaped ceramic particles suitable as a reactive template for preparing a crystal-oriented alkali metal niobate-based ceramic can be produced at relatively low production costs without the need for a complicated production process.

Abstract translation: 本发明的各向异性陶瓷颗粒由通式{（K 1-xy Na x Li y）4（Nb 1-z Ta z）6 O 17 + aMeO b}（其中Me是至少一个元素选择 来自由锑，铜，锰，钒，硅，钛和钨组成的组; b是由Me价数确定的正数），其中x，y，z和a满足0‰x‰0.5， 0‰‰0.3，0‰z‰0.3，‰‰0.1‰。 各向异性陶瓷颗粒具有板状形状。 平均粒径为1〜100μm，主表面的最大直径D与主面垂直方向的厚度t的比D / t为2以上，优选为5以上。 因此，可以以相对低的生产成本生产适合作为制备晶体取向的碱金属铌酸盐基陶瓷的反应性模板的各向异性陶瓷颗粒，而不需要复杂的生产工艺。

公开(公告)号：EP1905417A2

公开(公告)日：2008-04-02

申请号：EP07020874.9

申请日：2005-08-03

Applicant: Merck Patent GmbH

Inventor： Koch, Matthias, Dr. ,  Anselmann, Ralf, Dr.

IPC: A61K8/11 ,  A61K8/25 ,  A61K8/81 ,  A61Q17/04 ,  C08K3/36 ,  C08K9/02 ,  C09D7/12 ,  B01F17/00 ,  B01F17/52

CPC classification number: B01F17/0028 ,  A61K8/0241 ,  A61K8/044 ,  A61K8/25 ,  A61K8/29 ,  A61K8/8152 ,  A61K2800/412 ,  A61K2800/621 ,  A61Q17/04 ,  B01F17/0035 ,  B01F17/005 ,  B01F17/0057 ,  B01F17/0064 ,  B01J13/0026 ,  B01J13/0047 ,  B22F2998/00 ,  C01P2006/22 ,  C04B35/62807 ,  C04B35/63424 ,  C04B2235/3232 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3418 ,  C08K3/22 ,  C08K9/02 ,  C09C1/00 ,  C09C1/3072 ,  C09C1/3661 ,  C09C1/3676 ,  C09C1/3692 ,  C09C3/10 ,  C09D5/027 ,  C09D5/24 ,  C09D7/45 ,  C09D7/62 ,  C09D17/007 ,  B22F1/0022

Abstract: Die Erfindung betrifft die Verwendung von statistischen Copolymeren enthaltend mindestens eine Struktureinheit mit hydrophoben Resten und mindestens eine Struktureinheit mit hydrophilen Resten als Dispergiermittel zur Herstellung von Dispersionen mit inkompatibler disperser und kontinuierlicher Phase, insbesondere zur Dispergierung von Partikel mit hydrophiler Oberfläche in Ölen, Dispersionen bzw. Pulverzusammensetzungen, enthaltend statistische Copolymere und Partikel mit hydrophiler Oberfläche, sowie Verfahren zu deren Herstellung.

Abstract translation: 使用统计共聚物（A）（包含至少一个疏水残基（I）和亲水残基（II）的结构单元）作为分散剂，用于制备具有不相容的分散剂和连续相的分散体是新的。 还包括以下独立权利要求：（1）含有亲水性颗粒的油分散体，其包含（A）作为分散剂; （2）制备亲水性颗粒的油分散体，包括将（A）与油和亲水性颗粒混合; （3）含有涂覆有（A）的亲水性颗粒的粉末组合物; （4）制备粉末组合物，包括制备分散体并随后除去溶剂; 和（5）制备分散体，包括将粉末组合物与至少一种油载体材料混合。

公开(公告)号：EP1876157A1

公开(公告)日：2008-01-09

申请号：EP06745897.6

申请日：2006-04-28

Applicant: Hitachi Metals, Limited

Inventor： SHlMADA, Takeshi, Yamazaki Works, Itachi Metals, Ltd. ,  TERAO, Koichi, Yamazaki Works, Hitachi Metals, Ltd. ,  TOJI, Kazuya, Yamazaki Works, Hitachi Metals, Ltd.

IPC: C04B35/468 ,  H01C7/02

CPC classification number: C04B35/4682 ,  C01G23/006 ,  C01G29/006 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/62635 ,  C04B35/62645 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/6303 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/96 ,  H01C7/025 ,  H01C17/06533 ,  H01G4/1227

Abstract: To provide a semiconductor porcelain composition in which a portion of Ba of BaTiO 3 is substituted by Bi-Na, which is capable of inhibiting evaporation of Bi in a calcining step, inhibiting the formation of secondary phases by preventing a compositional shift of Bi-Na, further reducing a resistivity at room temperature, and inhibiting a scattering in a Curie temperature, and a method of producing the same.
Means for Resolution:
By separately preparing a composition of (BaQ)TiO 3 (Q is a semiconductive dopant) and a composition of (BiNa)TiO 3 , and calcining the composition of (BaQ)TiO 3 at a comparatively high temperature and calcining the composition of (BiNa)TiO 3 at a comparatively low temperature to thereby calcine the compositions at their respective optimum temperatures, evaporation of Bi in the composition of (BiNa)TiO 3 can be inhibited, formation of secondary phases can be inhibited by preventing a compositional shift of Bi-Na; and by mixing, forming and sintering the calcined powders, a semiconductor porcelain composition having a small resistivity at room temperature and being inhibited from a scattering in the Curie temperature can be provided.

Abstract translation: 为了提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，Bi-Na能够在煅烧步骤中抑制Bi的蒸发，通过防止Bi-Na的组成偏移来抑制二次相的形成 ，进一步降低室温下的电阻率，抑制居里温度的散射及其制造方法。 分解方法：通过分别制备（BaQ）TiO 3（Q为半导体掺杂剂）和（BiNa）TiO 3组成的组合物，并在相当高的温度下煅烧（BaQ）TiO 3的组成并煅烧 （BiNa）TiO 3的组成，从而在各自的最适温度下煅烧组合物，可以抑制Bi（BiNa）TiO 3的组成中Bi的蒸发，可以通过防止二次相的形成 Bi-Na的转变; 并且通过混合，形成和烧结煅烧粉末，可以提供在室温下具有小电阻率并被抑制居里温度散射的半导体瓷组合物。

公开(公告)号：EP1876156A1

公开(公告)日：2008-01-09

申请号：EP06731705.7

申请日：2006-04-12

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： KAWADA, Shinichiro Murata Manufacturing Co., Ltd. ,  KATAYAMA, Ryoko Murata Manufacturing Co., Ltd. ,  HORIKAWA, Katsuhiro Murata Manufacturing Co., Ltd.

IPC: C04B35/00 ,  C04B35/49 ,  H01L41/187

CPC classification number: H01L41/273 ,  C04B35/495 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3249 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/768 ,  C04B2235/79 ,  C04B2235/80 ,  H01L41/083 ,  H01L41/1873 ,  H01L41/43

Abstract: A piezoelectric ceramic composition according to the present invention includes a primary component represented by the general formula of
{(1-x)(K 1-a-b Na a Li b ) m (Nb 1-c-d Ta c Sb d )O 3 -xM1 n M2O 3 } (where M1 is Ca, Sr, or Ba, and M2 is Ti, Zr, or Sn), in which x, a, b, c, d, m, and n are set so as to satisfy 0.005≤x≤0.1, 0≤a≤0.9, 0≤b≤0.3, 0≤a+b≤0.9, 0≤c≤0.5, 0≤d≤0.1, 0.9≤m≤1.1, and 0.9≤n≤1.1, and 0.1 to 10 moles (preferably 1.5 to 10 moles) in total of at least one specific element selected from the group consisting of In, Sc, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, and Lu is contained with respect to 100 moles of the primary component. Preferably, Mn, ni, Fe, Zn, Cu, or Mg is further added. As a result, at both a very low and a high electric field, a high piezoelectric d constant can be stably obtained with a high efficiency.

Abstract translation: 一种压电陶瓷组合物，雅丁到本发明包括通过{（1-X）的通式表示的主成分（K 1-A-B的Na锂B）米（NB 1-CD的TaÇ锑D）O 3 -xM1 ñM2O 3}（其中，M1为Ca，Sr或Ba，并且M2是Ti，Zr或Sn），其中X，A，b，C，D，m和n被设定成满足0.005‰ X‰0.1，0‰，‰0.9，0‰b‰0.3，0‰A + b‰0.9，0‰ç‰0.5，0‰ð‰0.1，0.9‰米‰1.1和0.9‰ñ‰1.1，和 0.1至10个摩尔（优选为1.5〜10摩尔）总共至少一种特定元素的选自于由，SC，Y，钕，钐，铕，钆，铽，镝，钬，铒，镱，和 路被包含，相对于100个摩尔的主要组分。 优选地，锰，镍，铁，锌，铜，或Mg进一步添加。 其结果是，在这两个非常低的和高电场，高的压电d常数，可以稳定地以高效率得到。

公开(公告)号：EP1875780A2

公开(公告)日：2008-01-09

申请号：EP06727932.3

申请日：2006-04-13

Applicant: Philips Intellectual Property & Standards GmbH ,  Koninklijke Philips Electronics N.V.

Inventor： SCHMIDT, Peter ,  MEYER, Joerg ,  BECHTEL, Hans-Helmut ,  KOP, Theo Arnold

IPC: H05B33/14

CPC classification number: C09K11/7787 ,  C04B35/50 ,  C04B35/505 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/5445 ,  C04B2235/9653 ,  H01L33/502 ,  H01L33/507 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

Abstract: An illumination system, comprising a radiation source and a monolithic ceramic luminescence converter comprising at least one phosphor capable of absorbing a part of light emitted by the radiation source and emitting light of wavelength different from that of the absorbed light; wherein said at least one phosphor is an europium(III)-activated rare earth metal sesquioxide of general formula (Y Y-x -XE x ) 2-z (EU 1-a -3A a ) z , wherein RE is selected from the group of gadolinium, scandium, and lutetium, A is selected from the group of bismuth, antimony, dysprosium, samarium, thulium, and erbium, 0 1-x -RE x ) 2-z O 3 :(Eu 1-a A a ) Z , wherein RE is selected from the group of gadolinium, scandium, and lutetium, A is selected from the group of dysprosium, samarium, thulium, and erbium, 0