摘要:
A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x
摘要翻译:的p型氧化物所有这些是无定形的,并且由下列组成式表示:xAO.yCu2O其中x表示由AO和y的摩尔比例的Cu 2 O和x的摩尔表示比例和y满足下面的表达式:0 @ X <100且x + y = 100,和A是镁,钙,锶,和钡,或含有至少一个选自自由Mg,Ca,Sr和Ba中选出的混合物中的任何一个。
摘要:
A semiconductor device includes: a first buffer layer formed on a substrate; a second buffer layer formed on a portion of the first buffer layer; a third buffer layer formed on the first buffer layer and the second buffer layer; a first semiconductor layer formed on the third buffer layer; a second semiconductor layer formed on the first semiconductor layer; and a gate electrode, a source electrode, and a drain electrode that are formed on the second semiconductor layer, wherein the second buffer layer is composed of a material with higher resistivity than the first semiconductor layer; and the second buffer layer is formed in a region immediately below and between the gate electrode and the drain electrode.
摘要:
In a silicon carbide semiconductor device, a trench (6) penetrates a source region (4) and a first gate region (3) and reaches a drift layer (2). On an inner wall of the trench (6), a channel layer (7) of a first conductivity-type is formed by epitaxial growth. On the channel layer (7), a second gate region (8) of a second conductivity-type is formed. A first depressed portion (13) is formed at an end portion of the trench (6) to a position deeper than a thickness of the source region (4) so as to remove the source region (4) at the end portion of the trench (6). A corner portion of the first depressed portion (13) is covered by a second conductivity-type layer (16).
摘要:
A power semiconductor device is disclosed. The power semiconductor device includes a source electrode (161), a drain electrode (162), and a gate electrode (163) between the source electrode and the drain electrode, a third semiconductor layer (150) disposed under the source electrode and the drain electrode and having an open region with a width corresponding to a length of the gate electrode, a second semiconductor layer (130) disposed under the third semiconductor layer and connected to the gate electrode through the open region; and a first semiconductor layer (120) under the second semiconductor layer, wherein the third semiconductor layer comprises a first region (150-1) adjacent to the gate electrode, a second region (150-2) adjacent to the drain electrode, and a third region (150-3) between the first region and the second region, and the third region electrically separates the first region from the second region.
摘要:
A semiconductor device includes: an electron transit layer (13) formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate; an n-type semiconductor layer (15) formed with a semiconductor material having a wider bandgap than the electron transit layer, the n-type semiconductor layer being formed on the electron transit layer; a δ doping area (16) having an n-type impurity doped in a sheet-shaped region, the δ doping area being formed on the n-type semiconductor layer; and a barrier layer (17) formed with a semiconductor material having a wider bandgap than the electron transit layer, the barrier layer being formed on the δ doping area.
摘要:
A semiconductor device includes a substrate, a channel layer that is formed above the substrate, where the channel layer is made of a first nitride series compound semiconductor, a barrier layer that is formed on the channel layer, a first electrode that is formed on the barrier layer, and a second electrode that is formed above the channel layer. Here, the barrier layer includes a block layers and a quantum level layer. The block layer is formed on the channel layer and made of a second nitride series compound semiconductor having a larger band gap energy than the first nitride series compound semiconductor, and the quantum level layer is made of a third nitride series compound semiconductor having a smaller band gap energy than the second nitride series compound semiconductor, and has a quantum level formed therein.
摘要:
A GaN-based semiconductor is epitaxially grown on a silicon substrate with a surface orientation of (111). The difference between the lattice constant of the GaN and the silicon (111) surface is approximately 17%, which is quite large. Therefore, the dislocation density of the grown GaN exceeds 10 10 cm -2 . Screw dislocation density causes the leak current of the transistor using GaN to increases. Furthermore, the mobility of the transistor is reduced. Provided is a semiconductor substrate comprising a silicon substrate and a nitride semiconductor layer that is epitaxially grown on a (150) surface of the silicon substrate.
摘要翻译:在硅衬底上外延生长GaN基半导体,其表面取向为(111)。 GaN和硅(111)表面的晶格常数之间的差异约为17%,这是相当大的。 因此,生长的GaN的位错密度超过10 10 cm -2。 螺旋位错密度导致使用GaN的晶体管的漏电流增加。 此外,晶体管的迁移率降低。 提供了一种半导体衬底,其包括在硅衬底的(150)表面上外延生长的硅衬底和氮化物半导体层。
摘要:
Methods of forming semiconductor devices having customized contacts are provided including providing a first insulator layer and patterning the first insulator layer such that the first insulator layer defines at least one contact window. A second insulator layer is provided on the first insulator layer and in the at least one contact window such that the second insulator layer at least partially fills the at least one contact window. A first portion of the second insulator layer is etched such that a second portion of the second insulator layer remains in the at least one contact window to provide at least one modified contact window having dimensions that are different than dimensions of the at least one contact window. Related methods and devices are also provided.