High Electron Mobility Transistor (HEMT)
    42.
    发明公开
    High Electron Mobility Transistor (HEMT) 审中-公开
    晶体管具有高电子迁移率

    公开(公告)号:EP2760051A3

    公开(公告)日:2014-08-27

    申请号:EP13192432.6

    申请日:2013-11-12

    申请人: FUJITSU LIMITED

    发明人: Kamada, Youichi

    摘要: A semiconductor device includes: a first buffer layer formed on a substrate; a second buffer layer formed on a portion of the first buffer layer; a third buffer layer formed on the first buffer layer and the second buffer layer; a first semiconductor layer formed on the third buffer layer; a second semiconductor layer formed on the first semiconductor layer; and a gate electrode, a source electrode, and a drain electrode that are formed on the second semiconductor layer, wherein the second buffer layer is composed of a material with higher resistivity than the first semiconductor layer; and the second buffer layer is formed in a region immediately below and between the gate electrode and the drain electrode.

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    44.
    发明公开
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    碳化硅半导体元件及其制造方法

    公开(公告)号:EP2750171A1

    公开(公告)日:2014-07-02

    申请号:EP12825299.6

    申请日:2012-08-10

    申请人: DENSO CORPORATION

    发明人: TAKEUCHI, Yuichi

    摘要: In a silicon carbide semiconductor device, a trench (6) penetrates a source region (4) and a first gate region (3) and reaches a drift layer (2). On an inner wall of the trench (6), a channel layer (7) of a first conductivity-type is formed by epitaxial growth. On the channel layer (7), a second gate region (8) of a second conductivity-type is formed. A first depressed portion (13) is formed at an end portion of the trench (6) to a position deeper than a thickness of the source region (4) so as to remove the source region (4) at the end portion of the trench (6). A corner portion of the first depressed portion (13) is covered by a second conductivity-type layer (16).

    Power semiconductor device
    45.
    发明公开
    Power semiconductor device 审中-公开
    Leistungshalbleiterbauelement

    公开(公告)号:EP2731143A2

    公开(公告)日:2014-05-14

    申请号:EP13179593.2

    申请日:2013-08-07

    发明人: Oh, Jung Hun

    摘要: A power semiconductor device is disclosed. The power semiconductor device includes a source electrode (161), a drain electrode (162), and a gate electrode (163) between the source electrode and the drain electrode, a third semiconductor layer (150) disposed under the source electrode and the drain electrode and having an open region with a width corresponding to a length of the gate electrode, a second semiconductor layer (130) disposed under the third semiconductor layer and connected to the gate electrode through the open region; and a first semiconductor layer (120) under the second semiconductor layer, wherein the third semiconductor layer comprises a first region (150-1) adjacent to the gate electrode, a second region (150-2) adjacent to the drain electrode, and a third region (150-3) between the first region and the second region, and the third region electrically separates the first region from the second region.

    摘要翻译: 公开了功率半导体器件。 功率半导体器件包括在源电极和漏电极之间的源电极(161),漏极(162)和栅电极(163),设置在源极和漏极之下的第三半导体层(150) 电极,具有对应于所述栅电极的长度的开口区域;第二半导体层,设置在所述第三半导体层的下方,并通过所述开放区域与所述栅电极连接; 以及在所述第二半导体层下面的第一半导体层(120),其中所述第三半导体层包括与所述栅电极相邻的第一区域(150-1),与所述漏电极相邻的第二区域(150-2),以及 第一区域和第二区域之间的第三区域(150-3),并且第三区域将第一区域与第二区域电隔离。

    Semiconductor device
    46.
    发明公开
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:EP2706574A2

    公开(公告)日:2014-03-12

    申请号:EP13176825.1

    申请日:2013-07-17

    申请人: FUJITSU LIMITED

    发明人: Endoh, Akira

    摘要: A semiconductor device includes: an electron transit layer (13) formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate; an n-type semiconductor layer (15) formed with a semiconductor material having a wider bandgap than the electron transit layer, the n-type semiconductor layer being formed on the electron transit layer; a δ doping area (16) having an n-type impurity doped in a sheet-shaped region, the δ doping area being formed on the n-type semiconductor layer; and a barrier layer (17) formed with a semiconductor material having a wider bandgap than the electron transit layer, the barrier layer being formed on the δ doping area.

    摘要翻译: 一种半导体器件包括:由半导体材料形成的电子传输层(13),该电子传输层形成在半导体衬底上; 由具有比电子传输层更宽的带隙的半导体材料形成的n型半导体层(15),所述n型半导体层形成在所述电子传输层上; 掺杂在片状区域中的具有n型杂质的δ掺杂区(16),所述δ掺杂区形成在所述n型半导体层上; 以及由具有比电子传输层更宽带隙的半导体材料形成的阻挡层(17),阻挡层形成在δ掺杂区域上。

    SEMICONDUCTOR DEVICE
    47.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:EP2698823A1

    公开(公告)日:2014-02-19

    申请号:EP12770971.5

    申请日:2012-04-13

    摘要: A semiconductor device includes a substrate, a channel layer that is formed above the substrate, where the channel layer is made of a first nitride series compound semiconductor, a barrier layer that is formed on the channel layer, a first electrode that is formed on the barrier layer, and a second electrode that is formed above the channel layer. Here, the barrier layer includes a block layers and a quantum level layer. The block layer is formed on the channel layer and made of a second nitride series compound semiconductor having a larger band gap energy than the first nitride series compound semiconductor, and the quantum level layer is made of a third nitride series compound semiconductor having a smaller band gap energy than the second nitride series compound semiconductor, and has a quantum level formed therein.

    摘要翻译: 一种半导体器件,包括:衬底;沟道层,形成在衬底上方,沟道层由第一氮化物系列化合物半导体制成;阻挡层,形成在沟道层上;第一电极,形成在第一电极上 阻挡层以及形成在沟道层上方的第二电极。 这里,阻挡层包括阻挡层和量子能级层。 阻挡层形成在沟道层上并且由具有比第一氮化物系列化合物半导体大的带隙能量的第二氮化物系列化合物半导体制成,并且量子能级层由具有较小带的第三氮化物系列化合物半导体 间隙能量比第二氮化物系列化合物半导体大,并且具有形成在其中的量子能级。