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    METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE
    42.
    发明公开
    METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES LEISTUNGSHALBLEITERBAUELEMENTS

    公开(公告)号：EP3142143A1

    公开(公告)日：2017-03-15

    申请号：EP15184786.0

    申请日：2015-09-11

    申请人： ABB Technology AG

    发明人： Vobecky, Jan ,  Stiegler, Karlheinz ,  Dobrzynska, Jagoda ,  Bellini, Marco

    IPC分类号： H01L21/329 ,  H01L29/861 ,  H01L29/06 ,  B23K26/364 ,  H01L21/784

    CPC分类号： H01L29/66128 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/8611

    摘要： A method for manufacturing a power semiconductor device having an active region and a termination region surrounding the active region is provided. For the creation of a junction termination in the termination region the following steps are performed:
    (a) providing a substrate (1) of a first conductivity type having a first side (10) and a second side (15),
    (b) applying a masking layer (2, 20) on the first and on the second side (10, 15),
    (c) then creating a first recess (3) on the first side, and
    (d) creating a second recess (4) on the second side (15), the minimum substrate thickness (12) between the first recess (3) and the second recess (4) being thick enough to provide mechanical stability for the following manufacturing steps,
    (e) after step (d) applying a first dopant (50, 550) of a second conductivity type on the first side and on the second side (10, 15), wherein the first dopant is absorbed in the masking layer (2, 20),
    (f) creating a first layer (5) by driving-in the first dopant in the first recess (3) and a second layer (55) by driving-in the first dopant in the second recess (4), wherein the first layer (5) and the second layer (55) form a continuous layer between the first recess (3) and the second recess (4) and
    wherein in step (d) the minimum substrate thickness (12) is so small that in step (f) the first layer (5) and the second layer (55) can form the continuous layer.

    摘要翻译： 提供一种制造具有有源区域和围绕有源区域的端接区域的功率半导体器件的方法。 为了在端接区域中形成接合终端，执行以下步骤：（a）提供具有第一侧面（10）和第二侧面（15）的第一导电类型的基底（1），（b）施​​加 在第一侧和第二侧（10,15）上的掩模层（2,20），（c）然后在第一侧上形成第一凹槽（3），以及（d）在第一侧面上形成第二凹部 所述第二侧面（15）中，所述第一凹部（3）和所述第二凹部（4）之间的最小基底厚度（12）足够厚以为后续制造步骤提供机械稳定性，（e）在步骤（d）施加之后 在第一侧和第二侧（10,15）上具有第二导电类型的第一掺杂剂（50,550），其中第一掺杂剂被吸收在掩模层（2,20）中，（f）产生第一 通过在所述第一凹部（3）中驱动所述第一掺杂剂并且通过在所述第二凹部（4）中驱动所述第一掺杂剂而将所述第一层（5）和所述第二层（5） 所述第一层（55）在所述第一凹部（3）和所述第二凹部（4）之间形成连续层，并且其中在步骤（d）中，所述最小基底厚度（12）如此小以至于在步骤（f）中所述第一层 5），第二层（55）可以形成连续层。

    GRAIN-ORIENTED ELECTRICAL STEEL SHEET AND METHOD FOR MAGNETIC-DOMAIN-REFINEMENT THEREOF
    46.
    发明公开
    GRAIN-ORIENTED ELECTRICAL STEEL SHEET AND METHOD FOR MAGNETIC-DOMAIN-REFINEMENT THEREOF 审中-公开

    公开(公告)号：EP4455314A1

    公开(公告)日：2024-10-30

    申请号：EP22911886.4

    申请日：2022-12-20

    申请人： POSCO Co., Ltd

    发明人： KWON, Ohyeoul ,  KIM, Woosin ,  HAN, Kyuseok

    IPC分类号： C21D8/12 ,  C22C38/34 ,  B23K26/364 ,  H01F1/147

    摘要： According to an exemplary embodiment of the present invention, a grain oriented electrical sheet includes: a plurality of deformed parts formed on a surface of the electrical sheet along a rolling direction, in which an interval between the deformed parts is changed over an entire length of the sheet in response to an index Ks of sensitivity calculated by Equation 1 below, and at least two areas having a different interval between the deformed parts exist. Ks = 0 .7 × Ds + 0.3 × B8 / 10 (in Equation 1, Ks denotes an index of sensitivity, Ds denotes a particle size of grain (mm), and B8 denotes a magnetic flux density T measured at magnetic field strength of 800 A/m.)