公开(公告)号：EP0502884A1

公开(公告)日：1992-09-16

申请号：EP90917128.0

申请日：1990-11-26

申请人： MITEL CORPORATION

发明人： COMEAU, Alain

IPC分类号： H01L21 ,  G01R31 ,  G11C29 ,  H01L23 ,  H01L27

CPC分类号： G01R31/2856 ,  H01L22/34 ,  H01L2924/3011

摘要： Puce pour tester les semi-conducteurs destinée à l'analyse des défauts de fabrication de semi-conducteurs comprenant une matrice nx m de cellules de portes de transmission agencées de telles manière qu'au sein d'une rangée donnée, des bandes respectives de matériau conducteur d'un premier type forment une source commune et des électrodes de drain pour les transistors de la rangée, les sources et drains de chaque rangée étant indépendants, et qu'au sein d'une colonne, des bandes respectives de matériau conducteur dedeuxième type forment des électrodes de portes communes de telle manière que chaque colonne de transistors puisse être excitée indépendamment des autres. Un circuit d'entrée permet à un profil binaire prédéterminé d'être appliqué sélectivement aux entrées des rangées des cellules de porte de transmission. Un démultiplexeur comprenant des portes de transmission de sortie est connecté aux sorties respectives des rangées de la matrice afin d'effectuer unadressage sélectif de la sortie de chaque rangée de cellules de porte de transmission. Un amplificateur opérationnel est connecté aux sorties desdites cellules de porte de transmission de sortie et la sortie de l'amplificateur opérationnel est codée selon un schéma logique à trois niveaux. Un démultiplexeur sert à exciter sélectivement chaque colonne de cellules de porte de transmission.De cette manière, la nature physique et la localisation des défauts de la puce peuvent être déterminées à partir de ladite sortie codée à plusieurs niveaux. Les résultats sont utiles pour déterminer les rendements et la fiabilité des processus. Ils peuvent êtreutilisés pour le modelage de rendement de haut niveau.

公开(公告)号：EP0776480B1

公开(公告)日：2000-01-19

申请号：EP95928908.3

申请日：1995-08-21

申请人： MITEL CORPORATION

发明人： MANKU, Tajinder

IPC分类号： G01R27/26

CPC分类号： G01R27/2605

摘要： A capacitance measuring device comprises a MOS transistor having a source, drain, and gate; a first capacitor C1 connected between the gate and the drain so that charge is coupled from said drain onto said gate; and a second capacitor C2 connected to a source of gate voltage VG and to the gate. One of the first and second capacitors has a known capacitance and the other has an unknown capacitance. A DC voltage is supplied between the source and drain to cause a saturation current to flow therebetween. The ratio delta VG/ delta Vd for the saturation current, where VG is the applied gate voltage, and Vd is the drain voltage, is measured and the unknown capacitance derived therefrom.

公开(公告)号：EP0582605B1

公开(公告)日：1999-07-21

申请号：EP92909141.1

申请日：1992-05-01

申请人： MITEL CORPORATION

发明人： OUELLET, Luc

IPC分类号： H01L23/485

CPC分类号： H01L23/53223 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP0536160B1

公开(公告)日：1998-08-12

申请号：EP91909914.3

申请日：1991-05-28

申请人： MITEL CORPORATION

发明人： OUELLET, Luc

IPC分类号： H01L21/314 ,  H01L21/312 ,  H01L21/00 ,  B05C5/00

CPC分类号： H01L21/67173 ,  H01L21/02129 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/6715 ,  H01L21/67207 ,  Y10S148/133

摘要： A method is disclosed for applying spin-on glass (SOG) to a substrate over low-melting point, non-refractory materials such as aluminum. The spin-on glass is applied to the substrate in a moisture-free environment to minimize reverse hydrolysis during curing. This results in the formation of higher quality films, especially from inorganic SOGs.

公开(公告)号：EP0846338A1

公开(公告)日：1998-06-10

申请号：EP96923800.0

申请日：1996-07-24

申请人： MITEL CORPORATION

发明人： ORCHARD-WEBB, Jonathan, H.

IPC分类号： H01L21

CPC分类号： H01L24/81 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2224/48

摘要： A method of making electrical connections to an integrated circuit chip (1, 2, 3) comprises providing at least one chip having exposed conductors on its active surface, providing a substrate (4) having conductors (5) on its surface corresponding to said exposed conductors on the chip, mounting the chip on the substrate so that said conductors are in accurate alignment with the corresponding conductors on the substrate, bonding the chip to said substrate, and filling any voids between the conductors on the chip and the corresponding conductors on said substrate with a conductive material. This method removes the limitation imposed by the large pad size needed for conventional techniques.

公开(公告)号：EP0710426B1

公开(公告)日：1997-10-01

申请号：EP94921555.2

申请日：1994-07-13

申请人： MITEL CORPORATION

发明人： SKIERSZKAN, Simon ,  LEHMANN, Jim

IPC分类号： H04Q11/08

CPC分类号： H04J3/047 ,  H04Q11/08

摘要： A time division switching matrix capable of effecting rate conversion comprises a plurality of serial inputs for connection to respective serial input links, each capable of carrying time division multiplexed PCM channels, a plurality of serial outputs for connection to respective serial output links, each capable of carrying time division multiplexed PCM channels, and a serial-to-parallel converter associated with each input for converting a serial input stream to parallel format, each said serial-to-parallel converter being independently configurable to produce the same net parallel throughput regardless of the bit rate of the associated input link. The output side of the switching matrix can be similarly configured.

公开(公告)号：EP0708939B1

公开(公告)日：1997-06-04

申请号：EP94921556.0

申请日：1994-07-13

申请人： MITEL CORPORATION

发明人： ORCHARD-WEBB, Jonathan, H.

IPC分类号： G05F3/24

CPC分类号： H03K17/145 ,  H03K19/00369 ,  H03K19/00384

摘要： A method of improving the performance of an active semiconductor device with a voltage-controllable channel length, comprises providing a matched reference component having similar operating characteristics to the active semiconductor device, continually monitoring the breakdown voltage of the matched reference component, and maintaining the operating voltage of the active semiconductor device to lie just below the measured breakdown voltage of the matched reference component. In this way, the performance of the active component can be optimized.

公开(公告)号：EP0599931B1

公开(公告)日：1997-05-14

申请号：EP92917629.5

申请日：1992-08-21

申请人： MITEL CORPORATION

发明人： MILC, Thomas, A.

IPC分类号： H04M1/06

CPC分类号： H04M1/06

摘要： A telephone apparatus comprises a base and a handset. An inclined cradle is provided on the base for receiving the handset and is shaped such that a handset placed thereon normally falls naturally into a fully seated position. A switch means responsive to the presence or absence of the handset in the cradle places the apparatus in an 'on-hook' or 'off-hook' condition respectively. A co-operating arrangement respectively on the handset and the base permit said handset to be temporarily retained in a partially seated position on the cradle without activating the switch means so as to permit the handset to be parked temporarily on the cradle without placing the apparatus in the 'on-hook' condition.

公开(公告)号：EP0769225A1

公开(公告)日：1997-04-23

申请号：EP95923162.0

申请日：1995-07-06

申请人： MITEL CORPORATION

发明人： REESOR, Gordon, J.

IPC分类号： H03M7 ,  H04B14

CPC分类号： H03M7/3046

摘要： A circuit for applying a predetermined algorithm to an input signal, comprises an input for receiving the input signal, a signal processing device for processing the input signal in accordance with the predetermined algorithm, and a device for outputting the processed signal, the signal processing device comprising distributed bit-serial logic circuits to implement the predetermined algorithm.

公开(公告)号：EP0708939A1

公开(公告)日：1996-05-01

申请号：EP94921556.0

申请日：1994-07-13

申请人： MITEL CORPORATION

发明人： ORCHARD-WEBB, Jonathan, H.

IPC分类号： G05F3 ,  G05F1 ,  G11C11 ,  H03K17 ,  H03K19

CPC分类号： H03K17/145 ,  H03K19/00369 ,  H03K19/00384

摘要： A method of improving the performance of an active semiconductor device with a voltage-controllable channel length, comprises providing a matched reference component having similar operating characteristics to the active semiconductor device, continually monitoring the breakdown voltage of the matched reference component, and maintaining the operating voltage of the active semiconductor device to lie just below the measured breakdown voltage of the matched reference component. In this way, the performance of the active component can be optimized.