公开(公告)号：EP1443616B1

公开(公告)日：2007-01-24

申请号：EP03021206.2

申请日：2003-09-18

Applicant: Avago Technologies Enterprise IP (Singapore) Pte. Ltd.

Inventor： Tandon, Ashish ,  Chang, Ying-Ian ,  Corzine, Scott W. ,  Bour, David P. ,  Tan, Michael R.T.

IPC: H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/3436 ,  H01S2302/00

公开(公告)号：EP1580853B1

公开(公告)日：2006-05-31

申请号：EP05010646.7

申请日：2002-01-16

Applicant: Eudyna Devices Inc.

Inventor： Furuya, Akira, Fujitsu Quantum Dev. Ltd. ,  Anayama, Chikashi, Fujitsu Quantum Dev. Ltd. ,  Sugiura, Katsumi, Fujitsu Quantum Dev. Ltd. ,  Nakao, Kensei, Fujitsu Quantum Dev. Ltd. ,  Hasegawa, Taro, Fujitsu Qauntum Dev. Ltd.

IPC: H01S5/223

CPC classification number: B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

公开(公告)号：EP1443616A3

公开(公告)日：2005-11-30

申请号：EP03021206.2

申请日：2003-09-18

Applicant: Agilent Technologies, Inc.

Inventor： Tandon, Ashish ,  Chang, Ying-Ian ,  Corzine, Scott W. ,  Bour, David P. ,  Tan, Michael R.T.

IPC: H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/3436 ,  H01S2302/00

Abstract: The present invention provides a laser structure (100) that operates at a wavelength of 1.3µm and at elevated temperatures and a method of making same. The laser structure (100) includes a quantum well layer (32) of InAsP. The quantum well layer (32) is sandwiched between a first barrier layer (33) and a second barrier layer (34). Each barrier layer (33) (34) exhibits a higher bandgap energy than the quantum well layer (32). Also, each barrier layer (33) (34) comprises Ga x (AlIn) 1-x P in which x ≥ 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure (100).

公开(公告)号：EP1580853A1

公开(公告)日：2005-09-28

申请号：EP05010646.7

申请日：2002-01-16

Applicant: Fujitsu Quantum Devices Limited

Inventor： Furuya, Akira ,  Anayama, Chikashi ,  Sugiura, Katsumi ,  Nakao, Kensei ,  Hasegawa, Taro

IPC: H01S5/223

CPC classification number: B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

Abstract: In an S 3 -type semiconductor laser, in the perpendicular plane to the traveling direction of light, when an angle of a first growth profile line to the second principal planes, the first growth profile line connecting respective lower side lines of an upper inclined plane (10a) and a lower inclined plane (8a), both inclined planes (9a, 10a) formed along the second inclined plane (8a), of the first layer (9, 10) of the second conduction type cladding layer is θ 11 , and an angle of a second growth profile line to the second principal planes, the second growth profile line connecting respective lower side lines of an upper inclined plane (11a) and a lower inclined plane (10a), both inclined planes (11a, 10a) formed along the second inclined plane (8a), of the second layer (11) of the second conduction type cladding layer is θ 12 , θ 11 >θ 12 is satisfied.

Abstract translation: 在S3型半导体激光器中，在与光的行进方向垂直的平面中，当第一生长轮廓线相对于第二主平面的角度时，第一生长轮廓线连接上斜面的相应下侧线（ 第二导电型包层的第一层（9,10）的沿着第二斜面（8a）形成的两个斜面（9a，10a）和下斜面（8a）之间的距离为θ11， 所述第二生长轮廓线与所述第二生长轮廓线相对于所述第二主平面的角度，所述第二生长轮廓线连接上部倾斜面（11a）和下部倾斜面（10a）的相应下侧线，两个倾斜面（11a，10a） 第二导电型包层的第二层（11）的第二斜面（8a）为θ12，满足θ11>θ12。

公开(公告)号：EP1231685A2

公开(公告)日：2002-08-14

申请号：EP02250292.6

申请日：2002-01-16

Applicant: Fujitsu Quantum Devices Limited

Inventor： Furuya, Akira c/o Fujitsu Quantum Devices Ltd. ,  Anayama, Chikashi c/o Fujitsu Quantum Devices Ltd. ,  Sugiura, Katsumi c/o Fujitsu Quantum Devices Ltd. ,  Nakao, Kensei c/o Fujitsu Quantum Devices Ltd. ,  Hasegawa, Taro c/o Fujitsu Quantum Devices Ltd.

IPC: H01S5/223

CPC classification number: B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

Abstract: In an S 3 -type semiconductor laser, when an angle of a first growth profile line to the first principal plane (1a, 1b), the first growth profile line connecting respective. lower. side lines of an upper inclined plane (4a) and a lower inclined plane (3a) of the first layer (4) of the first conduction type cladding layer is θ 1 , an angle of a second growth profile line to the first principal plane (1a, 1b), the second growth profile line connecting respective lower side lines of an upper inclined plane (5a) and a lower inclined plane (4a) of the second layer (5) of the first conduction type cladding layer is θ 2 , an angle of a third growth profile line to the first principal plane (1a, 1b), the third growth profile line connecting respective lower side lines of an upper inclined plane (6a) and a lower inclined plane (5a) of the third layer (6) of the first conduction type cladding layer is θ 3 , and an angle of a fourth growth profile line to the first principal plane (1a, 1b), the fourth growth profile line connecting respective lower side lines of an upper inclined plane (7a) and a lower inclined plane (6a) of the fourth layer of the first conduction type cladding layer is θ 4 , relationships θ 1 2 , θ 2 >θ 3 , θ 3 4 can be satisfied.

Abstract translation: 在S3型半导体激光器中，当第一生长轮廓线相对于第一主平面（1a，1b）的角度为第一生长轮廓线时， 降低。 第一导电型包层的第一层（4）的上倾斜面（4a）和下倾斜面（3a）的边线为θ1，第二生长轮廓线相对于第一主面（1a） ，1b）中，连接第一导电型包覆层的第二层（5）的上倾斜面（5a）和下倾斜面（4a）的相应下侧线的第二生长轮廓线为θ2，角度 所述第三生长轮廓线连接到所述第一主平面的第三生长轮廓线，所述第三生长轮廓线连接所述第三层的所述上倾斜平面和所述下倾斜平面的相应下侧线， 所述第一导电型包覆层为θ3，所述第四生长轮廓线与所述第一主平面（1a，1b）之间的角度为第四生长轮廓线，所述第四生长轮廓线连接上斜面（7a）和下斜面 第一导电型包层的第四层的斜面（6a） ng层为θ4时，能够满足θ1<θ2，θ2>θ3，θ3<θ4的关系。

公开(公告)号：EP1187277A2

公开(公告)日：2002-03-13

申请号：EP01307503.1

申请日：2001-09-04

Applicant: Fujitsu Quantum Devices Limited

Inventor： Anayama, Chikashi, c/o Fujitsu Quantum Dev. Ltd.

IPC: H01S5/223

CPC classification number: B82Y20/00 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/34326 ,  H01S5/3434 ,  H01S5/3436 ,  H01S5/34373 ,  H01S5/3438

Abstract: An S 3 -type laser diode includes a p-type cladding layer (36) formed on an active layer (35) such that an inclined surface region thereof has a carrier concentration level of 1 x 10 18 cm -3 or more, wherein the p-type cladding layer (36) has a thickness of 0.35µm or more.

Abstract translation: 而后<3>型激光二极管包括p型覆层（36）上，在形成的活性层（35），以搜寻没有倾斜的表面区域上具有的载流子浓度水平1×10 <18>厘米<-3 >以上，worin的p型包覆层（36）的厚度为0时35微米或更大。

公开(公告)号：EP0232431A1

公开(公告)日：1987-08-19

申请号：EP86905398.3

申请日：1986-08-29

Applicant: HITACHI, LTD.

Inventor： KURODA, Takao Hitachi Koganei-ryo, 5-20-22 ,  WATANABE, Akiyoshi Hitachi Shobu-ryo, 5-18-3 ,  TSUJI, Shinji Hitachi Koyasudai-apart, 2-32-A104 ,  OHISHI, Akio Hitachi dai 4 Kyoshin-ryo, 4-14-6 ,  MATSUMURA, Hiroyoshi 264-61, Kubo, Hidaka-machi

IPC: H01S3/18 ,  H01L29/80 ,  H01L31/10

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L29/155 ,  H01S5/3407 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/34366

Abstract: A novel method of easily forming a quaternary group III-V crystal on the group III-V crystal maintaining the lattice superposition relative to the group III-V crystal. It is easy to form a superlattice that consists of a first binary group III-V (written as III 1 -V 1 ) crystal layer and a ternary group III-V (III 1 -III 2 -V 2 ) crystal layer on a substrate of group III-V crystal both maintaining lattice superposition with the substrate. A stabler superlattice layer is obtained if the ratio of film thickness of the III 1 -V 1 crystal to that of the III 1 -III 2 -V 2 crystal is so selected that the compositions thereof maintain the lattice superposition with the original crystal when the superlattice forms a mixed crystal spontaneously or being doped with impurities.