摘要:
A CVD reactor (10) having a thermal source that regulates heat to a semiconductor substrate inside said reactor (10) so as to cause an even distribution of heat across the substrate during processing. In one embodiment the thermal source is in the form of a disk (12) which is parallel and concentric with a substrate wafer (13) being processed, said disk (12) being closely spaced from the wafer (13) to uniformly heat the wafer (13) to a temperature suitable for processing. The thermal source disk (12) is heated by a light source (115) which impinges light on one surface (116) of the disk (12) which is oriented away from the wafer (13) so that the other surface (118) of this disk (12) facing the wafer (13) has a uniformity of temperature thereby effecting uniformity of wafer processing.
摘要:
Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressures in the vessels are reducible respectively. The vessels are so configured that objects to be processed are movable among them, and there is provided light projection means for projecting ultraviolet rays on gases introduced to at least one of the vessels.
摘要:
In order to solve the technical problems such as an increase in a film formation speed in an optical CVD process, an improvement in film quality and elimination of restrictions imposed to a light source and a starting gas, the present invention provides an optical CVD process which can be applied particularly advantageously to the fabrication of semiconductors by conjoint use of a pulsating laser beam and continuous light, by application of a plurality of laser beams for applying a second pulsating laser beam to between pulses of a first pulse train and by introduction of an additional gas into a reaction vessel besides the starting gas in order to promote photo decomposition of the starting gas.
摘要:
Die Erfindung bezieht sich auf eine Reaktorvorrichtung (1) für die Bearbeitung von Bauteilen, Zwischenprodukten oder Werkstoffen (30). Erfindungsgemäß ist die Reaktorvorrichtung (1) aus wenigstens einer Lampeneinheit (2), einer Grundeinheit (3), einer Beschickungseinheit (4) und einer Versorgungs- und Entsorgungseinheit (5) baukastenartig zusammensetzbar.
摘要:
A highly corrosive-resistant metal having a high purity and a specific plane index is manufactured by ion beam deposition (IBD). A thin film having less defects and impurities is obtained. A magnetoresistant effect film for a magnetoresistant effect type magnetic head which is highly corrosion-resistant and exhibits excellent characteristics can be formed. In IBD according to the present invention, metal ions are provided with adjusted ion energy of 10 to 100 eV, and a metal having a particular mass number is selected by a mass separation electromagnet.