公开(公告)号：EP0528655B1

公开(公告)日：2000-07-19

申请号：EP92307440.5

申请日：1992-08-13

申请人： HITACHI, LTD.

发明人： Kumihashi, Takao ,  Tsujimoto, Kazunori, Sakuragaokadanchi 5-305 ,  Tachi, Shinichi

IPC分类号： H01L21/306 ,  H01L21/321 ,  H01J37/32 ,  H01L21/311 ,  C23F4/00

CPC分类号： H01L21/31144 ,  G03F7/36 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32136 ,  H01L21/32139

公开(公告)号：EP1009014A2

公开(公告)日：2000-06-14

申请号：EP99309839.1

申请日：1999-12-03

申请人： Orbis Technologies Ltd.

发明人： Huggett, Paul Gideon ,  Boyd, Matthew Stuart

IPC分类号： H01J37/32 ,  C23F4/00

CPC分类号： H01J37/32935 ,  H01J2237/334 ,  H01J2237/3382

摘要： An end point controller (12) and an interface unit (17) therefor, for use in an anisotropic plasma etching process comprising a series of alternating etching and polymerization steps, the controller (12) having a monitor (13) for monitoring the intensity of a characteristic process parameter, typically an optical emission, and producing a signal indicative of said intensity, the unit (17) or controller (16) having a timer assembly determining the operation of the monitor (13) during each etching step, the assembly comprising at least two sequential timers (100)(105), the first timer (100) determining a time lag (tl) between the onset of the etching step and the operation of the second timer (105) which sets a time period (t2) within the etching step for monitoring the selected parameter.

公开(公告)号：EP0928499A1

公开(公告)日：1999-07-14

申请号：EP98943686.0

申请日：1998-07-14

申请人： ROBERT BOSCH GMBH

发明人： BECKER, Volker ,  LÄRMER, Franz ,  SCHILP, Andrea

IPC分类号： H01L21 ,  C23F4

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L21/30655 ,  H01L22/26

摘要： The invention relates to a method for detecting the transition of different materials in semiconductor structures in alternating etching and coating steps for anisotropic deep plasma etching of defined structures. According to the invention, the beginning of each etching step is determined by measuring the concentration of at least one given substance contained in the plasma when a characteristic threshold value (W) is obtained. Said value can also be obtained by means of an external synchronization signal indicating the beginning and the end of each etching step. Once the threshold value (W) has been obtained, a delay time (τ) which is longer than the required time for determining a first maximum concentration (1) is initiated. Subsequently, a second maximum concentration (2) is determined once the delay time (τ) has elapsed. In order to detect the transition of a material, the second maximum concentrations (2) of the etching steps are monitored with the purpose of determining whether the given value (A, B) has been exceeded or not.

公开(公告)号：EP0880369A2

公开(公告)日：1998-12-02

申请号：EP97903906.0

申请日：1997-01-22

申请人： ETEX CORPORATION

发明人： LEE, Dosuk, D. ,  NAGRAS, Atul

IPC分类号： A61L27 ,  A61F2 ,  C23C8 ,  C23F4

CPC分类号： C23C8/36 ,  A61F2/30767 ,  A61F2/3094 ,  A61F2002/3092 ,  A61F2002/30925 ,  A61F2310/00023 ,  A61F2310/00796 ,  A61L27/04 ,  A61L27/06 ,  A61L27/32 ,  A61L27/50 ,  A61L27/56 ,  C23F4/00

摘要： A method of obtaining a porous titanium surface suitable for medical implants is provided. The titanium surface is exposed to a plasma comprising a reactive plasma gas, the reactive plasma gas comprising an active etching species and a sputtering gas. The plasma conditions are effective to modify the titanium surface and provide surface porosity. The plasma conditions are effective to non-uniformly etch and sputter the titanium surface.

公开(公告)号：EP0868836A1

公开(公告)日：1998-10-07

申请号：EP97944360.0

申请日：1997-09-24

申请人： FUSION SYSTEMS CORPORATION

发明人： HUFFMAN, Maria ,  SAKTHIVEL, Palanikumaran ,  ZIMMERMAN, Teresa ,  NOBLE, Thomas

IPC分类号： C23F4 ,  H01J37 ,  H01L21 ,  H05H1

CPC分类号： H01J37/32192 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/02071 ,  H01L21/31116 ,  H05H1/46

摘要： A method for removing material from a substrate. A plasma is generated in a plasma generating and discharge device including a sapphire plasma tube (40). At least one fluorine-containing compound is introduced into the plasma. A forming gas is introduced into the plasma. The plasma is directed toward the material to be removed from the substrate (88).

公开(公告)号：EP0814500A3

公开(公告)日：1998-09-09

申请号：EP97304214

申请日：1997-06-17

申请人： APPLIED MATERIALS INC

发明人： PAN SHAOHER ,  XU SONGLIN

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/321 ,  H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/32137

摘要： A method for etching metal silicide layers
22a, 22b and polysilicon layers
24a, 24b on a substrate
20 with high etching selectivity, and anisotropic etching properties, is described. In the method, the substrate
20 is placed in a plasma zone
55 , and process gas comprising chlorine, oxygen and optionally helium gas, is introduced into the plasma zone. A plasma is formed from the process gas to etch the metal silicide layer
22 at high etching selectivity relative to etching of the polysilicon layer
24 , while providing substantially anisotropic etching of the metal silicide and polysilicon layers. Preferably, the plasma is formed using combined inductive and capacitive plasma sources.

公开(公告)号：EP0841838A1

公开(公告)日：1998-05-13

申请号：EP97922165.2

申请日：1997-05-22

申请人： SUMITOMO METAL INDUSTRIES, LTD.

发明人： MABUCHI, Hiroshi ,  HAYAMI, Toshihiro ,  HONDA, Shigeki

IPC分类号： H05H1/46 ,  H01L21/205 ,  H01L21/302 ,  C23C16/50 ,  C23F4/00

CPC分类号： H01J37/32467 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32477 ,  H01J37/32522

摘要： The plasma processing apparatus and plasma processing method of the present invention are suitable for the application of plasma processing to etching, ashing, CVD, etc. in the manufacturing of large scale integrated circuits (LSIs) and liquid crystal display panels (LCDs), and useful for the manufacturing of LSIs and LCDs. The apparatus is characterized in that the reaction chamber has its side wall separated into an inner side wall which faces to the interior of the reaction chamber and an outer side wall which faces to the exterior of the reaction chamber, with the inner side wall being isolated electrically from other portions of the reaction chamber and not grounded electrically. This structure improves the repeatability of plasma processing. The apparatus is also characterized in that the inner side wall of reaction chamber is isolated thermally from other portions of the reaction chamber and equipped with temperature control means. This structure improves the temperature control performance for the inner side wall and also improves the maintainability of the apparatus.

摘要翻译： 本发明的等离子体处理装置和等离子体处理方法适用于在大规模集成电路（LSI）和液晶显示面板（LCD）的制造中等离子体处理对蚀刻，灰化，CVD等的应用，以及 对LSI和LCD的制造有用。 该装置的特征在于，反应室的侧壁分成面向反应室内部的内侧壁和面向反应室外部的外侧壁，内侧壁被隔离 与反应室的其它部分电连接，而不是电接地。 这种结构提高了等离子体处理的重复性。 该装置的特征还在于，反应室的内侧壁与反应室的其它部分热隔离并配备有温度控制装置。 该结构提高了内侧壁的温度控制性能，并且还提高了装置的可维护性。

公开(公告)号：EP0838848A1

公开(公告)日：1998-04-29

申请号：EP97308454.4

申请日：1997-10-23

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Brennan, Kenneth D.

IPC分类号： H01L21/321 ,  C23F4/00

CPC分类号： H01L21/02071 ,  C23F4/00 ,  H01L21/32136

摘要： An embodiment of the instant invention is a method of etching a conductive structure comprised of copper and overlying a semiconductor substrate, the method comprising the step of: subjecting the conductive structure to a combination of plasma, an etchant, and a gaseous aluminum source. Preferably, the conductive structure is comprised of aluminum and copper (more preferably, it is comprised of aluminum and 1 to 4% by weight copper) or it may be substantially comprised of substantially pure copper. In addition, the etchant is preferably introduced into the process chamber in a gaseous state and is comprised of Cl 2 . The gaseous aluminum source may be comprised of: DMAH, trimethylaluminum, dimethylalane, trimethylaminealine, dimethylethylaminealane, dimethylethylaminedimethylalane, or AlCl 3 .

摘要翻译： 本发明的一个实施例是一种蚀刻由铜构成并覆盖半导体衬底的导电结构的方法，该方法包括以下步骤：对导电结构进行等离子体，蚀刻剂和气态铝源的组合。 优选地，导电结构由铝和铜组成（更优选地，其由铝和1至4重量％的铜组成），或者其可以基本上由基本上纯的铜组成。 此外，蚀刻剂优选以气态引入处理室，并且由Cl 2组成。 气态铝源可以由以下物质组成：DMAH，三甲基铝，二甲基亚砜，三甲基胺，二甲基乙基胺，二甲基乙基胺二甲基铝或AlCl 3。

公开(公告)号：EP0467390B1

公开(公告)日：1998-04-01

申请号：EP91112119.2

申请日：1991-07-19

申请人： TOKYO ELECTRON LIMITED ,  KABUSHIKI KAISHA TOSHIBA

发明人： Nozawa, Toshihisa ,  Arami, Junichi ,  Hasegawa, Isahiro, c/o Intellectual Property Div. ,  Okano, Haruo, c/o Intellectual Property Division

IPC分类号： C23C14/50 ,  C23C14/54 ,  C23C16/44 ,  C23C16/50 ,  C23F4/00 ,  H01L21/00

CPC分类号： H01L21/67069 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/3408 ,  H01J37/3435 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/334 ,  H01L21/6838

公开(公告)号：EP0814501A2

公开(公告)日：1997-12-29

申请号：EP97304215

申请日：1997-06-17

申请人： APPLIED MATERIALS INC

发明人： TSAI HUI-ING

IPC分类号： C23F4/00 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/321

CPC分类号： H01L21/32137

摘要： A method for etching metal silicide layers 22a, 22b and polysilicon layers 24a, 24b on a substrate 20 with high etching selectivity, and anisotropic etching properties, is described. In the method, the substrate 20 is placed in a plasma zone 55, and process gas comprising Cl2, O2, and N2, is introduced into the plasma zone. A plasma is formed from the process gas to selectively etch the metal silicide layer 22 at a first etch rate that is higher than a second rate of etching of the polysilicon layer 24, while providing substantially anisotropic etching of the metal silicide and polysilicon layers. Preferably, the plasma is formed using combined inductive and capacitive plasma sources.

摘要翻译： 一种用于在基板20与高蚀刻选择性，和各向异性蚀刻性蚀刻的金属硅化物层22a，22b和多晶硅层24a，24b的方法进行说明。 在该方法中，基片20被放置在等离子体区域55，并且包括氯气，O2，N2和工艺气体，被引入到等离子体区中。 等离子体从该工艺气体形成的第一蚀刻速率以选择性地蚀刻所述金属硅化物层22所做的是比多晶硅层24的蚀刻的第二速率更高，同时提供金属硅化物和多晶硅层的基本上各向异性蚀刻。 优选地，所述等离子体是使用组合电感和电容等离子体源形成。