摘要:
The present invention relates to a Cu 2 Zn 0.14 Sn 0.25 Te 2.34 nanocrystalline solution, its preparation method, a photosensitive resin solution, a method for forming black matrixes (BMs), and a color filter (CF) substrate. As the particle size of nanocrystallines in the nanocrystalline solution is small and light within the ultraviolet-visible light range can be absorbed, the BMs formed by utilization of the nanocrystalline solution can obtain good light shielding performance while having a small thickness. In the nanocrystalline solution, the particle size of the nanocrystallines dispersed in the nanocrystalline solution is 5 to 20nm; the band gap of the nanocrystallines is 0.8 to 1.5ev, and the grain surface of the nanocrystallines has organic functional groups.
摘要:
A X-ray radiation detector is disclosed which has a dual-layer structure photoconductor layer. The dual-layer structure consists of a first photoconductor layer (12) comprising a plurality of photosensitive particles and of a second photoconductor layer (22) on the first photoconductor layer (12), comprising a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer (12) may fill gaps between the plurality of crystals of the second photoconductor layer (22). A method of manufacturing the radiation detector may include: forming a first photoconductor layer (12) by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate (11); forming a second photoconductor layer (22) by crystal-growing photosensitive material on a second substrate (25); pressing the crystal-grown second photoconductor layer (22) on the first photoconductor layer (12) that is applied to the first substrate (11) and removing the solvent in the first photoconductor layer (12) via a drying process.
摘要:
Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate(114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).
摘要:
Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.
摘要:
A method for forming an absorber layer of a photovoltaic device comprises forming a nascent absorber layer on a metal foil substrate; and using a roll-to-roll system to transport the substrate through a furnace. The nascent absorber layer and/or substrate is heated at a distance of about 3mm to about 25mm from a surface of the nascent absorber layer and/or substrate in the furnace and in an H 2 Se gas, H 2 S gas, or group VIA vapor.