公开(公告)号：EP0824232A1

公开(公告)日：1998-02-18

申请号：EP97306008.0

申请日：1997-08-07

申请人： FUJIKIN INCORPORATED ,  Ohmi, Tadahiro

发明人： Ohmi, Tadahiro ,  Nishino, Koji ,  Ikeda, Nobukazu ,  Morimoto, Akihiro ,  Minami, Yukio ,  Kawada, Koji ,  Dohi, Ryosuke ,  Fukuda, Hiroyuki

IPC分类号： G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A pressure type flow rate control apparatus (1) controls flow rate of a fluid in an environment where a ratio of P2/P1 between an absolute pressure P1 at an upstream side of an orifice and an absolute pressure P2 at a downstream side of the orifice is maintained at a value less than about 0.7. The apparatus comprises: a plate for forming the orifice (5); a control valve (2) positioned upstream of the orifice; an orifice corresponding valve (9) positioned downstream of the orifice (5); a primary pressure detector (3) positioned between the control valve (2) and the orifice (5); a secondary pressure detector (11) positioned downstream of the orifice (5); a calculation control device (6) for calculating flow rate Qc on the basis of the measured pressure P1 of the primary pressure detector (3) by a formula Qc = KP1 (K being a constant) and for outputting as a control signal Qy a difference between a flow rate command signal Qs and the calculated flow rate signal Qc to a drive unit (14) of the control valve 2; and a pressure comparing, calculating apparatus (10) for calculating the ratio of P2/P1 between the detected pressure P1 of the primary pressure detector (3) and the detected pressure P2 of the secondary pressure detector (11). The pressure P1 upstream of the orifice is adjusted by opening and closing the control valve by the control signal Qy, thereby controlling the flow rate downstream of the orifice.

摘要翻译： 压力式流量控制装置（1）控制在孔口上游侧的绝对压力P1与孔口下游侧的绝对压力P2之间的P2 / P1的比例的环境中的流体流量 维持在小于约0.7的值。 该装置包括：用于形成孔口（5）的板; 位于孔口上游的控制阀（2）; 位于孔口（5）下游的孔对应阀（9）; 位于控制阀（2）和孔口（5）之间的初级压力检测器（3）; 位于孔口（5）下游的二次压力检测器（11）; 计算控制装置（6），用于通过公式Qc = KP1（K为常数）计算基于所测量的主压力检测器（3）的压力P1的流量Qc，并且作为控制信号Qy输出差 在流量指令信号Qs和计算出的流量信号Qc之间，与控制阀2的驱动单元（14）之间; 以及压力比较，用于计算一次压力检测器（3）的检测压力P1与二次压力检测器（11）的检测压力P2之间的P2 / P1的比率的计算装置（10）。 通过控制信号Qy打开和关闭控制阀来调节孔口上游的压力P1，从而控制孔口下游的流速。

公开(公告)号：EP0816731A2

公开(公告)日：1998-01-07

申请号：EP97110210.8

申请日：1997-06-23

申请人： Ohmi, Tadahiro ,  FUJIKIN INCORPORATED

发明人： Ohmi, Tadahiro ,  Yamaji, Michio, c/o FUJIKIN INCORPORATED ,  Ikeda, Nobukazu, c/o FUJIKIN INCORPORATED ,  Hatano, Masajuki, c/o FUJIKIN INCORPORATED ,  Yokoyama, Kusuke, c/o FUJIKIN INCORPORATED ,  Tanaka, Shigeaki, c/o FUJIKIN INCORPORATED

IPC分类号： F16K27/00 ,  F15B13/00

CPC分类号： F15B13/0814 ,  F15B13/0825 ,  F15B13/0835 ,  F15B13/0871 ,  F15B13/0892 ,  F16K27/003 ,  Y10T137/87249 ,  Y10T137/87684 ,  Y10T137/87877 ,  Y10T137/87885

摘要： A valve main body is internally formed with a main channel extending from a rear end face thereof nearly to a first valve actuator, and two subchannels communicating with the main channel via second and third valve actuators, respectively. The valve main body has a slanting face extending forwardly downward and having the first valve actuator mounted thereon.

摘要翻译： 阀主体内部形成有从其后端面延伸到第一阀致动器的主通道，以及分别经由第二和第三阀致动器与主通道连通的两个子通道。 阀主体具有向前向下延伸并且安装有第一阀致动器的倾斜面。

公开(公告)号：EP0585461B1

公开(公告)日：1997-11-19

申请号：EP92910215.0

申请日：1992-05-13

申请人： OHMI, Tadahiro ,  TAKASAGO NETSUGAKU KOGYO KABUSHIKI KAISHA

发明人： Ohmi, Tadahiro

IPC分类号： F25D9/00 ,  F25D17/02

CPC分类号： F25D17/02

摘要： This invention intends to provide an apparatus-cooling system high in cooling efficiency and easy in maintenance as well as a method to cool an apparatus. The invention is characterized in that an apparatus-cooling water system comprising at least a water tank (1) for storing pure water, pipings (3), (5) for outwardly introducing pure water from said water tank and returning said water to said tank, respectively, and a pump (2) for passing pure water trough said pipings is provided with means (6) for pouring ozone into said pure water.

公开(公告)号：EP0671761A4

公开(公告)日：1997-10-15

申请号：EP94900273

申请日：1993-11-17

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： H01L21/31 ,  C23C8/10 ,  C30B25/02 ,  H01L21/316

CPC分类号： H01L21/31662 ,  C23C8/10 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02238 ,  H01L21/02255

摘要： The present invention aims at providing an apparatus for and a method of forming low-temperature oxide films, which are capable of forming an oxide film at a low temperature and preventing the diffusion of impurities from the outside. The apparatus for forming an oxide film at a low temperature is characterized in that it has an oxidation furnace provided with a gas supply port and a gas discharge port, a heater for heating the oxidation furnace to a predetermined temperature, and a gas supply system disposed upstream of the oxidation furnace and provided with a means for adding an arbitrary quantity of water or a means for generating an arbitrary quantity of water.

摘要翻译： 本发明的目的在于提供一种能够在低温下形成氧化膜并防止杂质从外部扩散的低温氧化膜形成装置和方法。 在低温下形成氧化膜的装置的特征在于具有设置有气体供给口和气体排出口的氧化炉，将氧化炉加热到规定温度的加热器，以及配置在 在氧化炉的上游设置有用于添加任意量的水的装置或用于产生任意数量的水的装置。

公开(公告)号：EP0794598A1

公开(公告)日：1997-09-10

申请号：EP97301522.5

申请日：1997-03-06

申请人： CANON KABUSHIKI KAISHA ,  Ohmi, Tadahiro

发明人： Ohmi, Tadahiro ,  Shirai, Yasuyuki ,  Sano, Naoto

IPC分类号： H01S3/036 ,  H01S3/225

CPC分类号： H01S3/0305 ,  H01S3/036 ,  H01S3/225

摘要： An excimer laser generating system includes a laser chamber (1) whose inner surface (101) is covered with a fluorine-passivated surface. Preferably, the surfaces (102,103) of a blower (23) and heat exchanger (24) disposed in the laser chamber(1) are also covered with a fluorine-passivated surface. The fluorine-passivated surface (101,102,103) may be formed of a wide variety of materials including an aluminum oxide film, a fluoride film containing aluminum fluoride and magnesium fluoride, iron fluoride, and nickel fluoride. Preferably, the excimer laser generation system includes a gas supply system having an inert gas purging system so that gas sources can be replaced without exposing the inside of gas supply pipes to atmosphere. With the above arrangement, the excimer laser generating system can generate a laser beam pulse whose energy and shape are maintained constant for a long period of operation time without encountering serious degradation. The invention also provides a high-reliability step-and-repeat exposure apparatus using the above excimer laser generating system, capable of exposing a very fine pattern.

摘要翻译： 受激准分子激光器产生系统包括一个激光室（1），其内表面（101）覆盖有氟钝化表面。 所以优选的是，送风机（23）和在所述激光室（1），设置热交换器（24）的表面（102,103）覆盖有氟钝化表面。 氟钝化表面（101,102,103）可形成各种各样的包括在氧化铝上的电影材料中，氟化物膜含氟化铝和氟化镁，氟化铁，氟化镍。 优选地，受激准分子激光器产生系统包括具有至惰性气体吹扫系统的气体供给系统，以便没有气体源能够在不气体供给管的内部暴露于大气中进行更换。 利用上述布置，受激准分子激光器产生系统可产生激光束脉冲，其能量和形状保持恒定的操作很长一段时间，而不会遇到的严重降解。 因此本发明提供一种高可靠性的步进重复曝光使用上述准分子激光产生系统装置，能够露出非常精细的图案。

公开(公告)号：EP0686708A4

公开(公告)日：1997-08-06

申请号：EP94907677

申请日：1994-02-24

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SHIBATA TADASHI ,  UETAKE HIROAKI DEPT OF ELECTRO ,  MIYASHITA KAZUHISA DEPT OF ELE

IPC分类号： C30B25/14 ,  C23C14/00 ,  C23C16/509 ,  H01J37/32 ,  H01J37/34 ,  H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  C23C16/50 ,  C23C14/34

CPC分类号： H01J37/32082 ,  C23C14/0036 ,  C23C16/5096 ,  H01J37/32165 ,  H01J37/34 ,  H01J37/3473

摘要： This invention aims at providing a film forming method and a film forming apparatus which are capable of varying the density and composition of a deposition film in the direction of the thickness thereof, and obtaining a film of a stable and high quality. A film forming apparatus consisting of a sealed container having an inlet port for a gas used to cause a chemical vapor growth and sputter a target material, at least two electrodes provided in the container, means for supporting the target material and a substrate on the first and second electrodes out of these electrodes, and two high-frequency power sources having different frequencies and connected to the first and second electrodes; and a film forming method consisting of introducing a gas into the container, applying high-frequency power of different frequencies to the first and second electrodes to generate plasma, and forming a film while controlling DC potential of the target material, whereby a deposition film containing at least one kind of atom out of the atoms constituting the target material and at least one kind of atom out of the atoms contituting the gas mentioned above is formed on the substrate.

公开(公告)号：EP0709897A4

公开(公告)日：1997-05-28

申请号：EP94903034

申请日：1993-12-21

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SHIMADA HISAYUKI ,  HIRAYAMA MASAKI

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L23/14 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L29/772 ,  H01L21/20

CPC分类号： H01L29/513 ,  H01L21/28229 ,  H01L21/316 ,  H01L23/142 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78639 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

摘要： This semiconductor device has a large capacity of power driving, and can operate at a high speed. A first semiconductor region of a first conductivity type is formed on a metal substrate through a first insulating film. In the first semiconductor region, first source and drain regions of a second conductivity type are formed. Further, on the region which isolates the first source and drain regions, a first metallic gate electrode is formed through a second insulating film.

摘要翻译： 该半导体器件具有大功率驱动能力，并且可以高速运行。 第一导电类型的第一半导体区域通过第一绝缘膜形成在金属基板上。 在第一半导体区域中，形成第二导电类型的第一源极和漏极区域。 此外，在隔离第一源极和漏极区的区域上，第一金属栅电极通过第二绝缘膜形成。

公开(公告)号：EP0685806A4

公开(公告)日：1997-03-26

申请号：EP94907083

申请日：1994-02-22

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO ,  YAMASHITA TAKEO

IPC分类号： G06F7/02 ,  G06F7/24 ,  G06G7/60 ,  G06N3/063 ,  G11C15/04 ,  H01L27/10 ,  H03K19/00 ,  H03K19/0948

CPC分类号： G06F7/24 ,  G06N3/0635

摘要： A device comprising invertor circuit group including two or more invertor circuits formed by neuron MOS transistors; means for applying a first signal voltage common to the two or more invertors of the invertor circuit group to a first input gate of the invertor circuits; means for applying a given second signal to one or more second input gates other than the first input gate of the invertor circuits; a delay circuit for transmitting the variation of the output voltage of at least one of the invertor circuits of the invertor circuit group with a time delay generated by use of the variation with time of the signal voltage of either or both of the first and second signal voltages; a transistor whose ON and OFF is controlled by the signal transmitted from the delay circuit; storage circuits taking in signals by the ON and OFF of the transistor; and means for executing a given logical operation with respect to the output voltage signals generated by the invertor circuit group. The device has a function of storing the result of the logical operation in the storage circuits.

公开(公告)号：EP0546178B1

公开(公告)日：1997-03-19

申请号：EP91914621.7

申请日：1991-08-20

申请人： TAKASAGO NETSUGAKU KOGYO KABUSHIKI KAISHA ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro, 1-17-301, Komegabukuro 2-chome ,  INABA, H., Takasago Netsugaku K.K.K.Sogokenkyushu

IPC分类号： H05F3/06

CPC分类号： H01L21/67017 ,  H05F3/06

摘要： Neutralizing equipment which can realize simply and effectively the removal of the charges on a charged body such as a wafer which is easily charged. For example, after such an easily chargeable body as a wafer (3) is transported into a case (1), if neutralizing-charge producing means which are typically light sources (8a, 8b) for projecting ultraviolet rays for exciting into the case (1) is operated, the case (1) is filled with ions which are produced by ionizing the atmosphere gas, etc. of a nonreactive gas, etc. introduced beforehand in the case (1). Hereupon, the neutralizing-charge producing means can produce positive and negative ions and electrons. When the body is charged positively, the electrons or negative ions are moved toward the charge body to neutralize the positive charges on the charged body. On the other hand, when the body is charged negatively, the positive ions produced in the case (1) are moved toward the charged body to neutralize the negative charges thereon.

公开(公告)号：EP0725160A1

公开(公告)日：1996-08-07

申请号：EP92923995.2

申请日：1992-11-20

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro

IPC分类号： C23C8/14 ,  C23C8/18 ,  C22C38/44 ,  C23C8/02

CPC分类号： C23C8/18 ,  C23C8/02

摘要： A method of readily forming a passive oxide film based on chromium oxide characterized by subjecting stainless steel to electrolytic polishing, composite electrolytic polishing and fluidized abrasive polishing, baking the steel thus treated in an inactive gas to remove moisture from its surface, and heat treating the resultant steel at 300 to 600 °C in a gaseous atmosphere comprising hydrogen or a mixture thereof with an inactive gas and containing less than 4 ppm of oxygen or less than 500 ppb of moisture. An oxidized stainless steel characterized by comprising a stainless steel having a crystal grain number of 6 or above and, formed on the surface thereof, a passive oxide film based on chromium oxide, wherein the oxide film has a thickness of 5 nm or above and the atomic ratio of chromium to iron on the outermost layer of the film is 1 or above.

摘要翻译： 的膜基于通过对不锈钢进行电解抛光，复合电解研磨和流化磨料抛光，烘烤如此处理过的在惰性气体，以从其表面除去水分的钢，和热处理为特征的氧化铬随手形成钝化氧化物的方法 在300〜600℃在气态气氛与惰性气体包括氢气或它们的混合物，并且含有小于4ppm的氧气或湿气的小于500个ppb的所得钢。 氧化不锈钢通过包括具有6个或以上，并且形成在其表面上，钝化的氧化为基础的薄膜上氧化铬，worin的氧化膜的厚度为5纳米或以上的和晶粒数的不锈钢，其特征 铁铬的原子比的膜的最外层上是1或以上。