摘要:
Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
摘要:
The objective of the invention is to provide a photonic crystal device which enables efficient confinement of carriers while preventing the deterioration of device characteristics. Specifically a photonic crystal device has a photonic crystal in which media with different refractive indexes are regularly arranged, wherein an active region (11) includes an active layer (12) and carrier confinement layers (13, 14) provided on the top and bottom of the active layer (12) respectively for confining carriers. The photonic crystal is formed by a buried growth layer (15) with a larger bandgap than that of the active region (11).
摘要:
The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.
摘要:
Sensors are provided which enable detection with a high sensitivity in microchemistry and biochemical analysis by using devices integrated into a compact configuration and can be freely disposed on desired positions of a channel to perform detection. A measuring apparatus for detecting information and outputting light according to the information, the apparatus comprising: an active layer for emitting light and a micro-optical cavity, wherein light emission is limited in the active layer due to the influence of the selection of a photoelectromagnetic field mode, the selection is made by the micro-optical cavity, the light emission and a degree of selection of a photoelectromagnetic field mode is changed according to an environmental condition of the micro-optical cavity, so that the light emission is changed and the environmental condition is measured according to a change in the light emission.
摘要:
Sensors are provided which enable detection with a high sensitivity in microchemistry and biochemical analysis by using devices integrated into a compact configuration and can be freely disposed on desired positions of a channel to perform detection. A measuring apparatus for detecting information and outputting light according to the information, the apparatus comprising: an active layer for emitting light and a micro-optical cavity, wherein light emission is limited in the active layer due to the influence of the selection of a photoelectromagnetic field mode, the selection is made by the micro-optical cavity, the light emission and a degree of selection of a photoelectromagnetic field mode is changed according to an environmental condition of the micro-optical cavity, so that the light emission is changed and the environmental condition is measured according to a change in the light emission.
摘要:
A grating-outcoupled microcavity disk resonator (800) has whispering gallery modes (820) existing in a nearly circular resonator. Light is outcoupled by providing a grating region (810) in the plane of the grating-outcoupled microcavity disk resonator. The grating region (810) provides an outcoupling or loss mechanism that symmetrically interacts with the clockwise and counterclockwise whispering gallery modes, thereby making the resonator capable of surface emission (830).
摘要:
Laser comprising a first lasing microdisk (10), microcylinder or microannulus defining a microcavity having a circular cross-sectional periphery and a second waveguiding micromember (12) in a different plane and optically coupled by resonant photon tunnelling. The second waveguiding micromember includes a light output coupling (18) for providing light output from the laser without adversely affecting the Q value and low lasing threshold of the microcavity.
摘要:
A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in Fig. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure.