公开(公告)号：EP0644597A1

公开(公告)日：1995-03-22

申请号：EP93913479.7

申请日：1993-06-03

申请人： SHIBATA, Tadashi ,  OHMI, Tadahiro

发明人： SHIBATA, Tadashi ,  OHMI, Tadahiro

IPC分类号： H01L27/10 ,  H01L29/78 ,  G06G7/60 ,  H01L27/115 ,  G06F15/80

CPC分类号： G06N3/0635 ,  H01L27/115

摘要： Using the title semiconductor device, a synapse circuit through which no steady-state current flows, whose positive and negative weights can be realized by a single 5-V current, and which has a self-learning function is realized. This semiconductor device comprises first and second power source lines which supply high and low two potentials a first NMOS having a first floating gate, and a second PMOS having a second floating gate. The source and drain of the first NMOS are connected to the second and first power source lines through third NMOS and fourth PMOS, respectively. The source and drain of the second PMOS are connected in the first and second power source lines through fifth PMOS and sixth NMOS, respectively. The sources of the first NMOS and second PMOS are connected to the thrid floating gate through first and second capacitors, respectively.

摘要翻译： 使用标题半导体器件，实现了没有稳态电流流动的突触电路，其正负权重可以通过单个5V电流来实现，并且具有自学习功能。 该半导体器件包括第一和第二电源线，其提供具有第一浮置栅极的第一NMOS和具有第二浮置栅极的第二PMOS的高电位和低电位。 第一NMOS的源极和漏极分别通过第三NMOS和第四PMOS连接到第二和第一电源线。 第二PMOS的源极和漏极分别通过第五PMOS和第六NMOS连接在第一和第二电源线中。 第一NMOS和第二PMOS的源极分别通过第一和第二电容器连接到第三浮置栅极。

公开(公告)号：EP0379594B1

公开(公告)日：1994-12-07

申请号：EP89908265.5

申请日：1989-07-07

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  NAKAHARA,Fumio ,  SATOH,Tuyosi ,  UMEDA, Masaru

IPC分类号： C23C16/44 ,  C23C16/52 ,  C23C14/22 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31

CPC分类号： B08B9/0325 ,  C23C14/564 ,  C23C16/4402 ,  C23C16/4404

摘要： A gas supply pipeline system for process equipment, adapted to supply at least two kinds of process gas, and provided with at least two valves (135, 136, 139, 140) installed in each of independent flow passages formed between process gas supply pipelines and a purge gas supply pipe line, and at least two valves (137, 138, 141, 142) installed in each of a plurality of flow passages formed between the process gas supply pipelines and the pipelines in the process equipment. Each of the process gas supply pipelines and each of the pipelines in the process equipment can be purged and vacuumed by at least two valves in each of these flow passages that are opened or closed independently, and the stagnation of a gas in the pipelines not in use can be prevented by introducing a purge gas constantly thereinto.

公开(公告)号：EP0622841A1

公开(公告)日：1994-11-02

申请号：EP92924871.4

申请日：1992-12-02

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  MAKIHARA, Koji Dep. of Electronics Faculty of Eng.

IPC分类号： H01L21/68

CPC分类号： H01L21/67754 ,  H01L21/67017 ,  H01L21/67389 ,  H01L21/67393

摘要： A method and apparatus for transportation of wafers from one stage to another in a manufacturing process while protecting clean silicon surfaces and thin films on them from contamination through the air. The apparatus includes a wafer container (101) having a gas inlet (103) and a gas outlet (112), an inert gas container (103) having an inert gas sealed therein, and a piping (114) for connecting the gas inlet (113) of the wafer container to the inert gas container (103) and for sending the inert gas in the inert gas container to the wafer container (114), and wafers are transported while the inside of the wafer container is constantly purged by introducing the inert gas.

摘要翻译： 一种用于在制造过程中将晶片从一个阶段传送到另一个阶段的方法和装置，同时保护其上的清洁的硅表面和薄膜免受通过空气的污染。 该装置包括具有气体入口（103）和气体出口（112）的晶片容器（101），其中密封有惰性气体的惰性气体容器（103）和用于连接气体入口 113），并且将惰性气体向惰性气体容器发送到晶片容器（114），并且晶片容器的内部通过引入 惰性气体。

公开(公告)号：EP0587889A1

公开(公告)日：1994-03-23

申请号：EP92910166.5

申请日：1992-05-13

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro

IPC分类号： H01L21/304 ,  H01L21/306 ,  H01L21/00

CPC分类号： H01L21/02052 ,  B08B7/00 ,  C23G1/24 ,  H01L21/67051

摘要： A method for cleaning an object and an apparatus therefor, which uses a substance alternative to chlorofluorocarbon and having a detergency equal to that of chlorofluorocarbon. When a pure water including ozone (e.g., a concentration of 1.5 ppm) is sprayed on the object (6) to be treated, extraneous substances adhering on the object are removed completely from the object by the oxidation by ozone.

摘要翻译： 一种清洁物体及其设备的方法，其使用氯氟烃替代物质并具有与氯氟烃相同的去污力。 当将包含臭氧的纯水（例如，1.5ppm的浓度）喷洒在被处理物体（6）上时，通过臭氧氧化将附着在物体上的外来物质从物体中完全除去。

公开(公告)号：EP0463165A1

公开(公告)日：1992-01-02

申请号：EP90913222.7

申请日：1990-09-07

申请人： OHMI, Tadahiro ,  CANON KABUSHIKI KAISHA

发明人： OHMI, Tadahiro ,  MIYAWAKI, Mamoru

IPC分类号： H01L29/73 ,  H01L29/784 ,  H01L21/302 ,  H01L21/285

CPC分类号： H01L29/0847 ,  H01L21/31683 ,  H01L29/1033 ,  H01L29/41775 ,  H01L29/42304 ,  H01L29/66272 ,  H01L29/66287 ,  H01L29/66545 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/7375 ,  H01L29/7378 ,  H01L2924/0002 ,  Y10S148/10 ,  Y10S438/926 ,  Y10S438/951 ,  H01L2924/00

摘要： An element which includes a first film containing no impurity particles due to spontaneous oxidization or residual resist at its surface, and an electrically conductive material layer formed on a surface in contact with the surface of said first film. On the surface of the electrically conductive material layer is formed an insulating compound film as a result of surface reaction with the electrically conductive material layer, and on the surface of said first film is formed a desired second film that is necessary for constituting the element.

摘要翻译： 它包括一个第一膜含由于自发氧化或没有残留杂质微粒的抗蚀剂在其表面上，并且在与所述第一部电影的表面接触的表面上形成导电材料层的元素。 在导电材料层的表面上形成绝缘化合物薄膜作为与所述导电材料层，和在所述第一部电影的表面表面反应的结果形成所希望的第二电影的确实是必要的构成元件。

公开(公告)号：EP0380682A1

公开(公告)日：1990-08-08

申请号：EP89907275.5

申请日：1989-06-15

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  SHIBATA, Tadashi ,  UMEDA, Masaru

IPC分类号： H01L21/203

CPC分类号： H01L29/66772 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/84 ,  Y10S148/158

摘要： A method of fabricating semiconductor devices and, particularly, an art for forming thin-film semiconductor elements on a substrate. The fabrication method comprises a step for forming a conductor layer having a step on at least a portion on one main surface of the substrate, and a step for forming a semiconductor thin film on the substrate under the condition where a dc potential is being given to the conductor layer. The low-temperature process of the invention makes it possible to easily form a single- crystal semiconductor layer of high quality on any insulating substrate. Therefore, very high-speed semiconductor devices and high-performance flat panel displays can be manufactured.

摘要翻译： 一种制造半导体器件的方法，特别是在衬底上形成薄膜半导体元件的技术。 该制造方法包括用于形成在基板的一个主表面上的至少一部分上具有台阶的导体层的步骤，以及在将直流电位给予的条件下在基板上形成半导体薄膜的步骤 导体层。 本发明的低温方法使得可以在任何绝缘基板上容易地形成高质量的单晶半导体层。 因此，可以制造非常高速的半导体器件和高性能平板显示器。

公开(公告)号：EP1666645B1

公开(公告)日：2019-06-19

申请号：EP04747456.4

申请日：2004-07-07

申请人： Admap, Inc. ,  Mitsui Engineering & Shipbuilding Co., Ltd. ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  TERAMOTO, Akinobu ,  SANO, Sumio

IPC分类号： C30B29/36 ,  H01L21/304 ,  H01L21/336 ,  H01L29/78 ,  H01L21/02 ,  H01L21/314 ,  H01L29/16

公开(公告)号：EP1434253B1

公开(公告)日：2011-05-11

申请号：EP02800747.4

申请日：2002-10-02

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  SHIGETOSHI, Sugawa

IPC分类号： H01L21/00

CPC分类号： H01L29/518 ,  H01L21/28202 ,  H01L29/045 ,  H01L29/78

摘要： A semiconductor device in which field-effect transistors are fabricated on the surface of silicon substantially having direction of crystal plane. The field-effect transistors are so arranged on the silicon surface that the direction from the source region of each field-effect transistor to the drain region thereof substantially agrees with the direction of crystal plane.

公开(公告)号：EP1593888B1

公开(公告)日：2007-04-11

申请号：EP04709363.8

申请日：2004-02-09

申请人： FUJIKIN INCORPORATED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  IKEDA, Nobukazu, c/o Fujikin Incorporated ,  YAMAJI, Michio, c/o Fujikin Incorporated ,  KITANO, Masafumi, c/o Fujikin Incorporated ,  MORIMOTO, Akihiro, c/o Fujikin Incorporated

IPC分类号： F16K7/12 ,  F16K27/00 ,  F16K51/02

CPC分类号： F16K7/14 ,  F16K27/003 ,  F16K51/02

摘要： A valve in accordance with the reduction in diameter of piping in a vacuum discharge system, the reduction realizing downsizing of apparatuses for a vacuum discharge system and resultant reduced costs and shortened time for vacuum discharge. In the valve, inside corrosion, clogging, seat leakage, etc. by accumulation of dissociated products produced by decomposition of gas can be prevented from occurring. Specifically, passive aluminum is used for piping components, such as the valve, adapted for a vacuum discharge system so as to control decomposition of gas caused by rise in temperature during baking, so that components suitable for the reduction in diameter sizes in the vacuum discharge system are provided. Corrosion, clogging, seat leakage, etc. caused by decomposition of gas are prevented from occurring.

公开(公告)号：EP1744092A1

公开(公告)日：2007-01-17

申请号：EP05719181.9

申请日：2005-02-16

申请人： OHMI, Tadahiro ,  ZEON CORPORATION

发明人： OHMI, Tadahiro ,  SHIRAI, Yasuyuki ,  KATO, Takeyoshi c/o ZEON CORPORATION ,  TANAKA, Kimiaki c/o ZEON CORPORATION ,  NAKAMURA, Masahiro c/o ZEON CORPORATION ,  TANAKA, Katsutomo c/o ZEON CORPORATION

IPC分类号： F17C1/10 ,  C23C4/10 ,  C23C8/16 ,  C23C8/18

CPC分类号： C23C30/00 ,  C23C4/11 ,  C23C8/02

摘要： An apparatus for producing a gas using a raw material gas having high reactivity, in particular, a fluorinated hydrocarbon, or a vessel for supplying the gas, characterized in that the surface of a portion thereof contacting with the gas has an average roughness of 1 µm or less in terms of a center line average roughness Ra. It is preferred that an oxide-based passivated film such as a film based on chromium oxide, aluminum oxide, yttrium oxide, magnesium oxide or the like is formed on the surface having a roughness controlled as above. The above apparatus and vessel can be suitably used for preventing the contamination of a raw material gas originated from a gas production apparatus or a vessel for supplying the gas.

摘要翻译： 使用的原料气体产生的气体具有高的反应性，特别是氟化烃，或用于供给气体的容器，在一个部分的DASS模具表面特征的其与气体接触的装置具有以平均1微米的粗糙度 或以中心线平均粗糙度Ra计为以下。 优选确实到氧化物膜基钝化：诸如基于氧化铬，氧化铝，氧化钇，氧化镁或类似的膜具有控制如上的粗糙度的表面上形成。 上述装置和容器可以合适地用于防止源自气生产装置或用于供给气体的容器的原料气体的污染。