摘要:
A method and apparatus for efficiently depositing a dielectric film with a preselected thickness pattern, in particular a homogeneous, uniform diamond or diamond-like film on large area substrates through the use of opposing plasma torches (23) and linearly superimposing of microwave modes within the reaction chamber (26) creating and maintaining an extended linear plasma in close proximity to the substrate surfaces and utilizing laminar flow of the reactant gases in the plasma and over the surfaces. Substrate surfaces can be moved past the opposing torches (23) permitting the coating of large area, rectangularly-shaped substrate surfaces in a simple manner. Alternatively, the plasma horn or horns (23) can be moved across the substrate permitting coating of large area, rectangularly-shaped substrate surfaces.
摘要:
The invention relates to a plasma reactor (1) used especially for diamond chemical vapour deposition or, for example, for plasma surface treatment or plasma etching. The plasma reactor (1) comprises a reactor housing (2) configured as a resonator to which a high-frequency coaxial line (5) joined to a high-frequency generator (6) is connected for introducing microwaves. In the reactor housing a substrate holder (3) for a substrate to be coated is located. In the transitional area between the high-frequency coaxial line (5) and the reactor housing (2) a vacuum-tight window (12) of a material permeable to microwaves is arranged and the reactor housing has connections (10, 11) for supplying and withdrawing a process gas. In the plasma reactor (1) provided for in the invention the high-frequency coaxial line (5) is divided at its input end outside the reactor housing and directed against the essentially annular microwave window (12) on the periphery of the reactor housing.
摘要:
A method and apparatus for efficiently depositing a dielectric film with a preselected thickness pattern, in particular a homogeneous, uniform diamond or diamond-like film on large area substrates through the use of opposing plasma torches (23) and linearly superimposing of microwave modes within the reaction chamber (26) creating and maintaining an extended linear plasma in close proximity to the substrate surfaces and utilizing laminar flow of the reactant gases in the plasma and over the surfaces. Substrate surfaces can be moved past the opposing torches (23) permitting the coating of large area, rectangularly-shaped substrate surfaces in a simple manner. Alternatively, the plasma horn or horns (23) can be moved across the substrate permitting coating of large area, rectangularly-shaped substrate surfaces.
摘要:
The invention relates to a plasma reactor (1) used especially for diamond chemical vapour deposition or, for example, for plasma surface treatment or plasma etching. The plasma reactor (1) comprises a reactor housing (2) configured as a resonator to which a high-frequency coaxial line (5) joined to a high-frequency generator (6) is connected for introducing microwaves. In the reactor housing a substrate holder (3) for a substrate to be coated is located. In the transitional area between the high-frequency coaxial line (5) and the reactor housing (2) a vacuum-tight window (12) of a material permeable to microwaves is arranged and the reactor housing has connections (10, 11) for supplying and withdrawing a process gas. In the plasma reactor (1) provided for in the invention the high-frequency coaxial line (5) is divided at its input end outside the reactor housing and directed against the essentially annular microwave window (12) on the periphery of the reactor housing.
摘要:
A method and apparatus are disclosed employing a microwave applicator (12) for use with an electron cyclotron resonance (ECR) plasma source (20) for processing applications. A magnetic field is generated by magnets (32, 34) circumferentially arranged about a chamber (22) that is symmetrical about its longitudinal axis (24). The microwave applicator (12), which comprises one or more pairs of slotted antenna arrays (60), injects and distributes microwave power about the entire periphery of a plasma forming portion of the chamber. The antenna arrays (60) include a plurality of radiating stubs (62) for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals for efficiently distributing microwave power uniformly about the periphery of the plasma forming portion.
摘要:
The invention concerns a plasma reactor for generating and maintaining plasma. The plasma reactor comprises a resonant cavity (11) whose cross-section tapers in summit regions (13, 16) in which the wall (14) of the resonant cavity (11) is closed to such an extent that an excited field mode in the region of the cross-sectional tapered portions displays main peaks (15, 31) whose maximum field intensity is increased with respect to the field intensity of adjacent secondary peaks. A reaction unit (18) is provided in the region of a main peak (31) with a substrate (21) which is to be processed and which can be coated in the gas phase of the plasma (32). As a result of the field intensity distribution brought about by a resonant cavity (11) of the given shape, with main peaks (15, 31) which are greatly increased with respect to secondary peaks, process parameters such as gas pressure and coupled electromagnetic power can be selected very largely independently of one another when the plasma (32) is in a stable situation, without the plasma (32) igniting undesirably in the region of secondary peaks. Furthermore, the comparatively homogeneous field intensity distribution in the main peak (31) maintaining the plasma (32) causes the substrate (21) to be processed uniformly.