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    Oxide super-conductor
    82.
    发明公开
    Oxide super-conductor 失效
    OXID-Supraleiter。

    公开(公告)号：EP0608100A1

    公开(公告)日：1994-07-27

    申请号：EP94300336.8

    申请日：1994-01-18

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Adachi, Seiji ,  Yamauchi, Hisao ,  Tanaka, Shoji, c/o Superconduct. Res. Lab. ,  Mouri, Nobuo

    IPC分类号： H01L39/12

    CPC分类号： H01L39/126 ,  Y10S505/785

    摘要： An oxide superconductor composed of Cu, O and M (M is Ba, Sr and/or Ca) and including alternately arranged at least one rock-salt structure section and at least one infinite layer structure section, wherein the rock-salt structure section consists of two atomic layers each consisting of O and M and each having an atomic ratio O/M of 1 or less, and the infinite layer structure section consists of alternately arranged, first and second atomic layers. Each of the first atomic layers consists of O and Cu and has an atomic ratio O/Cu of 2, while each of the second atomic layers consists of the element M. The infinite layer structure section may consist of only one first atomic layer.

    摘要翻译： 由Cu，O和M（M是Ba，Sr和/或Ca）组成的氧化物超导体，并且包括交替地布置至少一个岩盐结构部分和至少一个无限层结构部分，其中岩盐结构部分包括 的两个原子层，每个由O和M组成，每个原子比的O / M为1或更小，无限层结构部分由交替布置的第一和第二原子层组成。 每个第一原子层由O和Cu构成，并且原子比O / Cu为2，而每个第二原子层由元素M组成。无限层结构部分可以仅由一个第一原子层组成。

    Process of producing a Josephson junction
    83.
    发明公开
    Process of producing a Josephson junction 失效
    约瑟夫森Verbindung und Herstellungsverfahren。

    公开(公告)号：EP0597663A1

    公开(公告)日：1994-05-18

    申请号：EP93308926.0

    申请日：1993-11-09

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  NEC CORPORATION

    发明人： Neumann, Christian ,  Suzuki, Katsumi ,  Enomoto, Youichi ,  Tanaka, Shoji, City Corp. Kashiwagi 103

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2496

    摘要： A Josephson junction is disclosed which includes a substrate of a single crystal having a substantially flat surface, a wiring pattern of an oxide superconductor formed on the flat surface of the substrate, and an altered region formed having a width of 300 nm or less and formed in the wiring pattern to intersect the wiring pattern, the crystal orientations of the wiring pattern on both sides of the altered region being equal to each other. The Josephson junction may be prepared by a process including the steps of: (a) coating a surface of a substrate of a single crystal with a normal metal to form a protecting layer over the surface of the substrate; (b) irradiating a predetermined portion of the protecting layer with a focused ion beam so that an irradiated portion is formed in the substrate; (c) removing the protecting layer from the substrate; and (d) forming a wiring pattern of an oxide superconductor on the surface of the substrate from which the protecting layer has been removed such that the wiring pattern crosses the irradiated portion of the substrate, thereby forming an altered portion in the wiring pattern at a position above the irradiated portion.

    摘要翻译： 公开了一种约瑟夫逊结，其包括具有基本上平坦的表面的单晶的衬底，形成在衬底的平坦表面上的氧化物超导体的布线图案和形成为宽度为300nm或更小的改变区域，并形成 在与布线图案相交的布线图案中，改变区域两侧的布线图案的晶体取向彼此相等。 约瑟夫逊结可以通过包括以下步骤的方法制备：（a）用正常金属涂覆单晶的基材的表面以在基材的表面上形成保护层; （b）用聚焦离子束照射保护层的预定部分，使得在基板中形成照射部分; （c）从衬底上去除保护层; 以及（d）在已经去除了保护层的基板的表面上形成氧化物超导体的布线图案，使得布线图案与基板的照射部分交叉，从而在布线图案中形成改变部分 位于照射部分上方。

    Method of making an oxide superconducting thin film
    85.
    发明公开
    Method of making an oxide superconducting thin film 失效
    Verfahren zur Herstellung einer supraleitendendünnenOxydschicht。

    公开(公告)号：EP0587095A2

    公开(公告)日：1994-03-16

    申请号：EP93114284.8

    申请日：1993-09-06

    申请人： NIPPON STEEL CORPORATION ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  MITSUBISHI ELECTRIC CORPORATION ,  HOKKAIDO ELECTRIC POWER CO., INC.

    发明人： Ito, Wataru, c/o Supercon. Research Lab., Int. ,  Morishita, Tadataka, c/o Supercon Research Lab Int ,  Homma, Norio, c/o Dept. of Research and Dev. ,  Yoshida, Yukihisa, c/o Supercon. Research Lab. Int

    IPC分类号： H01L39/24 ,  C04B35/50

    CPC分类号： C23C14/35 ,  C23C14/087 ,  C23C14/46 ,  H01L39/2435 ,  Y10S505/731

    摘要： A method of making a superconducting thin film of a Y-Ba-Cu-O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber (1), a substrate (6) disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target (5) functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is substantially unchanged with variation of a cathode current flowing through the target when adjusting the DC voltage and controlling a value of the DC current while maintaining the DC voltage substantially at the set value.

    摘要翻译： 一种通过使用二极管平行板型溅射装置制造Y-Ba-Cu-O系列材料的超导薄膜的方法，所述二极管平行板式溅射装置包括真空室（1），设置在真空室内的基板（6） 要形成超导薄膜的平坦表面和用作阴极的板状靶（5），并设置在真空室内以平行地面对基板的平坦表面，目标由其制成 作为超导薄膜的材料，将等离子体气体引入到真空室中，以及施加在阴极和衬底之间的电压，其中该方法包括以下步骤：将频率高于40MHz的高频电压施加在 阴极和衬底以产生引入的气体的等离子体，以直流阴极为极性的高频电压叠加直流电压（V），将直流电压设定为 其中当调节直流电压并控制直流电流的值同时保持直流电压基本上处于设定值时，直流电压随着正在流过目标物的阴极电流的变化而基本上不变。

    Manufacturing method of an oxide superconductor with high critical current density
    86.
    发明公开
    Manufacturing method of an oxide superconductor with high critical current density 失效
    Oxid-Supraleiter mit hoher kritischer Stromdichte und Herstellungsmethode。

    公开(公告)号：EP0575968A1

    公开(公告)日：1993-12-29

    申请号：EP93109970.9

    申请日：1993-06-22

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  THE KANSAI ELECTRIC POWER CO., INC. ,  FUJIKURA LTD.

    发明人： Okamura, Osamu, c/o Supercond. Research Lab. Int. ,  Kume, Atsushi, c/o Supercond. Research Lab. Int. ,  Shiohara, Yuh, c/o Supercond. Research Lab. Int.

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2483 ,  Y10S505/734

    摘要： An oxide superconductor capable of realizing a high critical current density and its manufacturing method requiring only a low temperature heat treatment. An oxide superconductor has a superconductive layer with a composition of RE₁Ba₂Cu₃O 7-x, where RE stands for any one of rare earth elements including Y, Er, Gd, Dy, Ho, Er, and Yb, which is formed on the substrate by RE₁Ba₂Cu₃O 7-x phase and CuO phase resulting from a decomposition of RE₁Ba₂Cu₄O₈ phase, in which the CuO phase and micro-defects caused by the decomposition function as pinning centers. This superconductive layer is formed by applying a solution containing organic compounds of a plurality of metallic elements for constituting the oxide superconductive layer; calcining the substrate applied with the solution to obtain a calcined body in which the organic compounds contained in the solution are thermally decomposed; heating the calcined body to produce RE₁Ba₂Cu₄O₈ phase; and decomposing the RE₁Ba₂Cu₄O₈ phase into RE₁Ba₂Cu₃O 7-x phase and CuO phase, to obtain the oxide superconductor.

    摘要翻译： 能够实现高临界电流密度的氧化物超导体及其仅需要低温热处理的制造方法。 氧化物超导体具有具有RE1Ba2Cu3O7-x组成的超导层，其中RE代表包括Y，Er，Gd，Dy，Ho，Er和Yb的稀土元素中的任何一种，其通过RE1Ba2Cu3O7- x相和CuO相由RE1Ba2Cu4O8相分解产生，其中CuO相和微分子缺陷引起的分解作用为钉扎中心。 该超导层通过涂布含有构成氧化物超导层的多个金属元素的有机化合物的溶液而形成; 煅烧施加有溶液的基板以获得其中包含在溶液中的有机化合物热分解的煅烧体; 加热煅烧体产生RE1Ba2Cu4O8相; 并将RE1Ba2Cu4O8相分解成RE1Ba2Cu3O7-x相和CuO相，得到氧化物超导体。

    Method and apparatus for monitoring oxide superconducting film
    88.
    发明公开
    Method and apparatus for monitoring oxide superconducting film 失效
    Verfahren und Apparat zurÜberwachungoxidisch supraleitender Schichten。

    公开(公告)号：EP0545302A1

    公开(公告)日：1993-06-09

    申请号：EP92120284.2

    申请日：1992-11-27

    申请人： HITACHI, LTD. ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Higashiyama, Kazutoshi ,  Hirabayashi, Izumi ,  Morishita, Tadataka ,  Tanaka, Shoji

    IPC分类号： H01L39/24 ,  F02M67/12 ,  F02M51/06

    CPC分类号： H01L39/2422

    摘要： In formation of an oxide superconducting film on various substrates by chemical vapor deposition (CVD), a film-growing process is monitored in situ by irradiating the growing oxide superconducting thin film surface on a substrate (5) alternately with s-polarized laser beam (28) and p-polarized laser beam (28) at the Brewster angle of the substrate (5) or film to measure the intensity of reflected laser beams. Thickness, growth rate and flatness or smoothness of a growing film can be monitored on the basis of measured intensity, whereby a flat and smooth, and uniform oxide superconducting thin film can be formed effectively with respect to the operation and economy.

    摘要翻译： 在通过化学气相沉积（CVD）在各种衬底上形成氧化物超导膜时，通过与s偏振激光束交替地照射衬底（5）上生长的氧化物超导薄膜表面来现场监测膜生长过程 28）和p偏振激光束（28）以基板（5）或膜的布鲁斯特角测量反射激光束的强度。 可以基于测量的强度来监测生长膜的厚度，生长速率和平坦度或平滑度，由此可以有效地形成平坦且平滑且均匀的氧化物超导薄膜。