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192 条记录 (耗时 0.023 秒)

    ANISOTROPIC MAGNETORESISTANCE (AMR) SENSOR NOT REQUIRING SET/RESET DEVICE
    83.
    发明公开
    ANISOTROPIC MAGNETORESISTANCE (AMR) SENSOR NOT REQUIRING SET/RESET DEVICE 审中-公开

    公开(公告)号：EP3441779A1

    公开(公告)日：2019-02-13

    申请号：EP17778656.3

    申请日：2017-04-05

    申请人： Multidimension Technology Co., Ltd.

    发明人： XUE, Songsheng ,  LEI, Xiaofeng ,  SHEN, Weifeng ,  FENG, Lixian

    IPC分类号： G01R33/09

    摘要： The present invention comprises an anisotropic magnetoresistive (AMR) sensor without a set and reset device (100) comprising a substrate (140), an exchange bias layer (130), an AMR layer (110) and a collection of barber-pole electrodes (122). An exchange bias layer (130) is deposited on the substrate (140), and an AMR layer (110) is deposited on the exchange bias layer (130). The AMR layer (110) is composed of multiple groups of AMR strips, wherein each group of AMR strips is composed of several AMR strips. The barber-pole electrodes (122) are arranged on each AMR strip under certain rules. The AMR sensor (100) achieves coupling by using the exchange bias layer (130), without requiring a reset/set coil. Because a coil is not be used, the power consumption of the chip is reduced greatly, and the manufacturing process is simpler, providing improved yield and lower cost.

    HIGH-SENSITIVITY SINGLE-CHIP PUSH-PULL TYPE TMR MAGNETIC FIELD SENSOR
    86.
    发明公开
    HIGH-SENSITIVITY SINGLE-CHIP PUSH-PULL TYPE TMR MAGNETIC FIELD SENSOR 审中-公开

    公开(公告)号：EP3373022A1

    公开(公告)日：2018-09-12

    申请号：EP16861520.1

    申请日：2016-10-31

    申请人： Multidimension Technology Co., Ltd.

    发明人： DEAK, James Geza ,  ZHOU, Zhimin

    IPC分类号： G01R33/02 ,  G01R33/09

    CPC分类号： G01R33/098 ,  G01R33/02 ,  G01R33/09

    摘要： A TMR high-sensitivity single-chip push-pull bridge magnetic field sensor (30) comprises a substrate (31) and two comb-shaped soft ferromagnetic flux concentrators with an interdigitated structure formed on the substrate. The two comb-shaped soft ferromagnetic flux concentrators (36, 37) respectively comprise N and N-1 rectangular comb teeth and corresponding comb seats wherein N is an integer greater than 1. Gaps are formed between the comb teeth of one comb-shaped soft ferromagnetic flux concentrator (36) and the comb seat of the other comb-shaped soft ferromagnetic flux concentrator (37) in an X direction. Adjacent comb teeth in a +Y direction form 2m-1 odd space gaps and 2m even space gaps. Here, m is an integer greater than zero and less than N. The push magnetoresistive sensing element strings (38) and the pull magnetoresistive sensing element strings (39) are located respectively in the odd space gaps and the even space gaps, and they are electrically interconnected into a push-pull magnetoresistive sensor bridge. The magnetization alignment directions of the ferromagnetic pinned layer of the magnetic sensing element strings are Y direction. A magnetic field gain coefficient ANS between the external magnetic field B (x-ext) in the X direction and a B y magnetic-field component in the gaps in the Y direction is given as to B y /B (x-ext) , and it is greater than 1. This magnetoresistive sensor (30) has a simple structure with the advantages of high sensitivity and low power consumption.

    PERMANENT MAGNET SUITABLE FOR MAGNETIC ANGLE ENCODER
    87.
    发明授权
    PERMANENT MAGNET SUITABLE FOR MAGNETIC ANGLE ENCODER 有权

    公开(公告)号：EP2942794B1

    公开(公告)日：2018-07-11

    申请号：EP14735222.3

    申请日：2014-01-03

    申请人： Multidimension Technology Co., Ltd.

    发明人： DEAK, James Geza ,  ZHOU, Zhimin

    IPC分类号： G01D5/14 ,  H01F7/02

    CPC分类号： H01F7/021 ,  G01D5/145 ,  H01F1/047 ,  H01F1/0551 ,  H01F1/06 ,  H01F7/0289

    摘要： The present invention relates to a permanent magnet suitable for a magnetic angle encoder. The permanent magnet (100, 300) has a cylindrical ring structure and comprises a first permanent magnet unit (101, 301) and a second permanent magnet unit (102, 302). The first permanent magnet unit (101, 301) and the second permanent magnet unit (102, 302) are geometrically symmetrical with respect to a diametral cross section (110, 310). The magnetization intensity (103, 303) of the first permanent magnet unit (101, 301) and the magnetization intensity (104, 304) of the second permanent magnet unit (102, 302) are parallel to the axial direction of the cylindrical ring and are in opposite directions, or the magnetization intensity (103, 303) of the first permanent magnet unit (101, 301) and the magnetization intensity (104, 304) of the second permanent magnet unit (102, 302) are perpendicular to the diametral cross section (110, 310) and are parallel to one another and in the same direction.

    INTEGRATED CURRENT SENSOR USING Z-AXIS MAGNETORESISTIVE GRADIOMETER AND LEAD FRAME CURRENT
    88.
    发明公开
    INTEGRATED CURRENT SENSOR USING Z-AXIS MAGNETORESISTIVE GRADIOMETER AND LEAD FRAME CURRENT 审中-公开
    集成电流传感器采用Z轴磁阻梯度仪和铅框架电流

    公开(公告)号：EP3290932A1

    公开(公告)日：2018-03-07

    申请号：EP16785878.6

    申请日：2016-04-21

    申请人： Multidimension Technology Co., Ltd.

    发明人： DEAK, James Geza ,  ZHOU, Zhimin

    IPC分类号： G01R19/00 ,  G01R15/00

    摘要： An integrated current sensor comprising a Z axis gradiometer and a lead frame primary coil (15), wherein the Z-axis gradiometer (13) is a magnetoresistive Z-axis gradient sensor, comprising a substrate (10), with two elongated soft magnetic flux concentrators placed upon the substrate (A1, B1). The soft ferromagnetic flux concentrators (A1, B1) are located above or below but displaced from a long-axis centerline (11) equidistant from the magnetoresistive sensor strings, such that the combined magnetoresistive sensing unit detects the magnetic field perpendicular to the long-axis center line (11), and it is configured as a gradiometer sensor bridge. The lead frame serves as the primary coil (15), and the Z-axis gradiometer (13) is placed above or below a cross-section of the current carrying portion of the lead frame (151), such that the current detection direction (17) is parallel to the long-axis centerline (11). This sensor can detect currents of up to 5 to 50 A, it has low power consumption, small size, and fully integrated.

    摘要翻译： 一种集成电流传感器，包括Z轴梯度仪和引线框架初级线圈（15），其中Z轴梯度计（13）是磁阻Z轴梯度传感器，包括衬底（10），两个细长的软磁通量 集中器放置在基板上（A1，B1）。 软铁磁通量集中器（A1，B1）位于上方或下方，但与距磁阻传感器线等距的长轴中心线（11）移位，使得组合磁阻传感单元检测垂直于长轴的磁场 中线（11），并配置为梯度传感器桥。 引线框用作初级线圈（15），并且Z轴梯度计（13）放置在引线框架（151）的电流承载部分的横截面的上方或下方，使得电流检测方向（ 17）平行于长轴中心线（11）。 该传感器可以检测高达5至50 A的电流，具有低功耗，小尺寸和完全集成的特点。

    COPPER THERMAL RESISTANCE THIN FILM TEMPERATURE SENSOR CHIP, AND PREPARATION METHOD THEREFOR
    89.
    发明公开
    COPPER THERMAL RESISTANCE THIN FILM TEMPERATURE SENSOR CHIP, AND PREPARATION METHOD THEREFOR 审中-公开
    铜热敏薄膜温度传感器芯片及其制备方法

    公开(公告)号：EP3267165A1

    公开(公告)日：2018-01-10

    申请号：EP16758456.4

    申请日：2016-02-29

    申请人： Multidimension Technology Co., Ltd.

    发明人： XUE, Songsheng ,  SHEN, Weifeng ,  FENG, Lixian

    IPC分类号： G01K7/18

    摘要： A copper thermal resistance thin-film temperature sensor chip comprises a substrate (3), a temperature sensor, and two electrode plates (1, 2), the temperature sensor which has a plurality of electrically connected resistance elements (4) is placed on the substrate (3), a portion of the resistance elements form a resistance adjustment circuit (5). Integrated circuit elements are deposited by thin-film technology. It consists seed layer, copper thermal resistance thin-film layer above the seed layer and passivation layer above the copper thermal resistance thin-film layer. Through semiconductor manufacturing and processing technology, the thermistor layer of this structure is to be fabricated into a serious of thermistor wires and then to form the temperature sensor, furthermore this temperature sensor has a resistance adjustment circuit (5) which is used to adjust resistance value precisely. The preparation method of the sensor chip comprises depositing thin-film on the surface of the substrate, and then a final sensor chip can be obtained through the processing of magnetron sputtering, schematize, peeling, and etching. This sensor chip has the advantages of high impedance, excellent thermal stability, good linearity and low cost.

    摘要翻译： 一种铜热电阻薄膜温度传感器芯片，包括衬底（3），温度传感器和两个电极板（1,2），温度传感器具有多个电连接的电阻元件（4） 衬底（3）中，一部分电阻元件形成电阻调节电路（5）。 集成电路元件通过薄膜技术沉积。 它由晶种层，晶种层上方的铜热阻薄膜层和铜热阻薄膜层上方的钝化层组成。 通过半导体制造和加工技术，将该结构的热敏电阻层制作成热敏电阻线，然后形成温度传感器，并且该温度传感器具有电阻调整电路（5），用于调整电阻值 恰恰。 传感器芯片的制备方法包括在基板表面沉积薄膜，然后通过磁控溅射，图案化，剥离和蚀刻的处理得到最终的传感器芯片。 该传感器芯片具有阻抗高，热稳定性好，线性好，成本低等优点。